Vertical Bridgman growth of thermoelectric clathrate Ba8Ga16Sn30with a type-VIII structure

Y. X. Chen, K. Niitani, J. Izumi, K. Suekuni, T. Takabatake

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8 Citations (Scopus)

Abstract

Type-VIII clathrate Ba8Ga16Sn30(BGS) is a promising thermoelectric material with tunable carrier types. We have studied the Bridgman growth conditions by combining differential thermal analysis (DTA) and powder X-ray diffraction analysis. It is found that the raw elements Ba, Ga, and Sn react at 465 °C to form the type-VIII BGS compound. The DTA indicates the presence of a liquidus line above the peritectic point of BGS at 495 °C. By using the vertical Bridgman method, single crystals of n-type and p-type BGS have been grown from Sn-rich and Ga-rich initial compositions, respectively. The obtained crystals of n-type Ba8Ga16Sn30and p-type Ba8Ga16Sn30-xGex(x≈0.7) are 10 mm sized. On several parts cut from the grown crystals, the Seebeck coefficient and electrical resistivity have been measured up to 330 °C. The values weakly change along the vertical direction of the crystals, keeping the thermoelectric power factors as high as 12 and 9 μW/K2cm, respectively, for n- and p-type crystals.

Original languageEnglish
Pages (from-to)312-318
Number of pages7
JournalJournal of Crystal Growth
Volume402
DOIs
Publication statusPublished - 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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