Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing

Masafumi Inaba, Akinori Seki, Kazuaki Sato, Tomoyoshi Kushida, Taisuke Kageura, Hayate Yamano, Atsushi Hiraiwa, Hiroshi Kawarada

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A vertical edge graphite layer (VEG) fabricated on a diamond (001) substrate and the recovery of the crystallinity of the diamond substrate following high-dose ion implantation and high-temperature annealing (HTA) was investigated. The Al ions were implanted into the diamond (001) surface at 773 K (500 °C), followed by HTA at 1973 K (1700 °C). The graphite edges were vertically oriented, but each domain was randomly rotated in the in-plane direction, which was confirmed via multiple cross-sectional transmission electron microscopy images obtained from different directions rotated 2, 5, 10, and 15° around the [001] axis. The Raman and photoluminescence exhibited no significant peaks. The initial sp2 structure state of the VEG was nucleated in an early stage of the HTA and the surface diamond was subsequently reconstructed, which was confirmed using stopping-and-range-of-ions-in-matter calculations and Rutherford backscattering/channeling (RBS-C) measurements. The RBS-C spectra indicate that the crystal is maintained after hot implantation and is recovered by HTA. This VEG structure may be useful for ohmic contact with diamond electrical devices.

Original languageEnglish
Article number1700040
JournalPhysica Status Solidi (B) Basic Research
Volume254
Issue number9
DOIs
Publication statusPublished - Sep 2017

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Diamond
Graphite
Ion implantation
ion implantation
Diamonds
graphite
diamonds
Annealing
dosage
annealing
Rutherford backscattering spectroscopy
backscattering
Temperature
Ions
Ohmic contacts
Substrates
stopping
electric contacts
crystallinity
implantation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing. / Inaba, Masafumi; Seki, Akinori; Sato, Kazuaki; Kushida, Tomoyoshi; Kageura, Taisuke; Yamano, Hayate; Hiraiwa, Atsushi; Kawarada, Hiroshi.

In: Physica Status Solidi (B) Basic Research, Vol. 254, No. 9, 1700040, 09.2017.

Research output: Contribution to journalArticle

Inaba, Masafumi ; Seki, Akinori ; Sato, Kazuaki ; Kushida, Tomoyoshi ; Kageura, Taisuke ; Yamano, Hayate ; Hiraiwa, Atsushi ; Kawarada, Hiroshi. / Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing. In: Physica Status Solidi (B) Basic Research. 2017 ; Vol. 254, No. 9.
@article{b17406aeaf0449368e8cf646f5b89fde,
title = "Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing",
abstract = "A vertical edge graphite layer (VEG) fabricated on a diamond (001) substrate and the recovery of the crystallinity of the diamond substrate following high-dose ion implantation and high-temperature annealing (HTA) was investigated. The Al ions were implanted into the diamond (001) surface at 773 K (500 °C), followed by HTA at 1973 K (1700 °C). The graphite edges were vertically oriented, but each domain was randomly rotated in the in-plane direction, which was confirmed via multiple cross-sectional transmission electron microscopy images obtained from different directions rotated 2, 5, 10, and 15° around the [001] axis. The Raman and photoluminescence exhibited no significant peaks. The initial sp2 structure state of the VEG was nucleated in an early stage of the HTA and the surface diamond was subsequently reconstructed, which was confirmed using stopping-and-range-of-ions-in-matter calculations and Rutherford backscattering/channeling (RBS-C) measurements. The RBS-C spectra indicate that the crystal is maintained after hot implantation and is recovered by HTA. This VEG structure may be useful for ohmic contact with diamond electrical devices.",
author = "Masafumi Inaba and Akinori Seki and Kazuaki Sato and Tomoyoshi Kushida and Taisuke Kageura and Hayate Yamano and Atsushi Hiraiwa and Hiroshi Kawarada",
year = "2017",
month = "9",
doi = "10.1002/pssb.201700040",
language = "English",
volume = "254",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "9",

}

TY - JOUR

T1 - Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing

AU - Inaba, Masafumi

AU - Seki, Akinori

AU - Sato, Kazuaki

AU - Kushida, Tomoyoshi

AU - Kageura, Taisuke

AU - Yamano, Hayate

AU - Hiraiwa, Atsushi

AU - Kawarada, Hiroshi

PY - 2017/9

Y1 - 2017/9

N2 - A vertical edge graphite layer (VEG) fabricated on a diamond (001) substrate and the recovery of the crystallinity of the diamond substrate following high-dose ion implantation and high-temperature annealing (HTA) was investigated. The Al ions were implanted into the diamond (001) surface at 773 K (500 °C), followed by HTA at 1973 K (1700 °C). The graphite edges were vertically oriented, but each domain was randomly rotated in the in-plane direction, which was confirmed via multiple cross-sectional transmission electron microscopy images obtained from different directions rotated 2, 5, 10, and 15° around the [001] axis. The Raman and photoluminescence exhibited no significant peaks. The initial sp2 structure state of the VEG was nucleated in an early stage of the HTA and the surface diamond was subsequently reconstructed, which was confirmed using stopping-and-range-of-ions-in-matter calculations and Rutherford backscattering/channeling (RBS-C) measurements. The RBS-C spectra indicate that the crystal is maintained after hot implantation and is recovered by HTA. This VEG structure may be useful for ohmic contact with diamond electrical devices.

AB - A vertical edge graphite layer (VEG) fabricated on a diamond (001) substrate and the recovery of the crystallinity of the diamond substrate following high-dose ion implantation and high-temperature annealing (HTA) was investigated. The Al ions were implanted into the diamond (001) surface at 773 K (500 °C), followed by HTA at 1973 K (1700 °C). The graphite edges were vertically oriented, but each domain was randomly rotated in the in-plane direction, which was confirmed via multiple cross-sectional transmission electron microscopy images obtained from different directions rotated 2, 5, 10, and 15° around the [001] axis. The Raman and photoluminescence exhibited no significant peaks. The initial sp2 structure state of the VEG was nucleated in an early stage of the HTA and the surface diamond was subsequently reconstructed, which was confirmed using stopping-and-range-of-ions-in-matter calculations and Rutherford backscattering/channeling (RBS-C) measurements. The RBS-C spectra indicate that the crystal is maintained after hot implantation and is recovered by HTA. This VEG structure may be useful for ohmic contact with diamond electrical devices.

UR - http://www.scopus.com/inward/record.url?scp=85019857794&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019857794&partnerID=8YFLogxK

U2 - 10.1002/pssb.201700040

DO - 10.1002/pssb.201700040

M3 - Article

AN - SCOPUS:85019857794

VL - 254

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 9

M1 - 1700040

ER -