Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Masafumi Inaba, Kazuma Suzuki, Megumi Shibuya, Chih Yu Lee, Yoshiho Masuda, Naoya Tomatsu, Wataru Norimatsu, Atsushi Hiraiwa, Michiko Kusunoki, Hiroshi Kawarada

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10 18 cm -3 was estimated to be ∼1.3 × 10 -4 Ω cm 2 and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40-0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

Original languageEnglish
Article number123501
JournalApplied Physics Letters
Volume106
Issue number12
DOIs
Publication statusPublished - Mar 23 2015
Externally publishedYes

Fingerprint

silicon carbides
carbides
carbon nanotubes
electric contacts
electrical resistivity
durability
high current
transistors
decomposition
heat
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Inaba, M., Suzuki, K., Shibuya, M., Lee, C. Y., Masuda, Y., Tomatsu, N., ... Kawarada, H. (2015). Very low Schottky barrier height at carbon nanotube and silicon carbide interface. Applied Physics Letters, 106(12), [123501]. https://doi.org/10.1063/1.4916248

Very low Schottky barrier height at carbon nanotube and silicon carbide interface. / Inaba, Masafumi; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih Yu; Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Hiraiwa, Atsushi; Kusunoki, Michiko; Kawarada, Hiroshi.

In: Applied Physics Letters, Vol. 106, No. 12, 123501, 23.03.2015.

Research output: Contribution to journalArticle

Inaba, M, Suzuki, K, Shibuya, M, Lee, CY, Masuda, Y, Tomatsu, N, Norimatsu, W, Hiraiwa, A, Kusunoki, M & Kawarada, H 2015, 'Very low Schottky barrier height at carbon nanotube and silicon carbide interface', Applied Physics Letters, vol. 106, no. 12, 123501. https://doi.org/10.1063/1.4916248
Inaba, Masafumi ; Suzuki, Kazuma ; Shibuya, Megumi ; Lee, Chih Yu ; Masuda, Yoshiho ; Tomatsu, Naoya ; Norimatsu, Wataru ; Hiraiwa, Atsushi ; Kusunoki, Michiko ; Kawarada, Hiroshi. / Very low Schottky barrier height at carbon nanotube and silicon carbide interface. In: Applied Physics Letters. 2015 ; Vol. 106, No. 12.
@article{95f866b8a2934df68a1c34849bbbb3f4,
title = "Very low Schottky barrier height at carbon nanotube and silicon carbide interface",
abstract = "Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10 18 cm -3 was estimated to be ∼1.3 × 10 -4 Ω cm 2 and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40-0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.",
author = "Masafumi Inaba and Kazuma Suzuki and Megumi Shibuya and Lee, {Chih Yu} and Yoshiho Masuda and Naoya Tomatsu and Wataru Norimatsu and Atsushi Hiraiwa and Michiko Kusunoki and Hiroshi Kawarada",
year = "2015",
month = "3",
day = "23",
doi = "10.1063/1.4916248",
language = "English",
volume = "106",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Very low Schottky barrier height at carbon nanotube and silicon carbide interface

AU - Inaba, Masafumi

AU - Suzuki, Kazuma

AU - Shibuya, Megumi

AU - Lee, Chih Yu

AU - Masuda, Yoshiho

AU - Tomatsu, Naoya

AU - Norimatsu, Wataru

AU - Hiraiwa, Atsushi

AU - Kusunoki, Michiko

AU - Kawarada, Hiroshi

PY - 2015/3/23

Y1 - 2015/3/23

N2 - Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10 18 cm -3 was estimated to be ∼1.3 × 10 -4 Ω cm 2 and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40-0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

AB - Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10 18 cm -3 was estimated to be ∼1.3 × 10 -4 Ω cm 2 and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40-0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84925703371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925703371&partnerID=8YFLogxK

U2 - 10.1063/1.4916248

DO - 10.1063/1.4916248

M3 - Article

AN - SCOPUS:84925703371

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 123501

ER -