Visible cathode luminescence of oxidized dy-doped Si films

Takayoshi Masaki, Shinji Kawai, Yoshimine Kato, Teruaki Motooka

Research output: Contribution to journalArticle

Abstract

Visible cathode luminescence (CL) spectra were observed between the wavelengths of 480 and 750 nm at room temperature from oxidized dysprosium (Dy)-doped silicon films formed by pulsed-jet chemical vapor deposition, The films were deposited using CH3SiH3 and Dy(C 11H19O2)3 gases at 600°C on Si(001) substrates followed by thermal oxidization at 860°C for 30 min. Since the CL spectra from the film were similar to those from Dy 2O3 powder, it seems that Dy2O3 as well as SiO2 were formed after the thermal oxidation. The observed CL spectrum appeared to correspond to that of Dy3+ in Dy 2O3 or in SiO2 matrix. Secondary ion mass spectrometry measurements of the deposited film showed that Dy was highly doped up to 2 × 1021 atoms/cm3.

Original languageEnglish
Pages (from-to)5196-5198
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume46
Issue number8 A
DOIs
Publication statusPublished - Aug 6 2007

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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