Visible light enhanced TiO₂ thin film bilayer dye sensitized solar cells

Visible light enhanced nitrogen-sulfur (N-S) doped titanium dioxide (TiO₂) thin films were prepared by the sol-gel method using thiourea as a dopant. The physical and chemical properties of the TiO₂ thin films were greatly influenced by the amount of thiourea added to the sol-gel solution. The greatest shift to longer wavelengths for visible light absorption was observed with 0.6 g of thiourea in the precursor solution, while 0.4 g yielded the largest particle sizes. These single-cycle dip-deposited N-S doped TiO₂ thin films were used as visible light harvesters as well as blocking layers in dye sensitized solar cells. When deposited directly on conducting fluorine doped tin oxide electrodes, photo-conversion efficiencies were reduced. However, the opposite configuration, with N-S doped thin films on top of nanoporous TiO₂, yielded an increased open-circuit voltage of 0.84 V, a short-circuit current density of 9.86 mA cm^-2, and an overall conversion efficiency of 5.88% greater than that of a standard cell. The effectiveness of the blocking layer on the cell efficiencies was analyzed by electrochemical impedance spectroscopy.