Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM

Masaki Kudo, Masashi Arita, Yasuo Takahashi, Kazuhiro Ohba, Masayuki Shimuta, Ichiro Fujiwara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time during in-situ TEM observation. A TEM sample of the CBRAM cells was processed by a focused ion beam method. The formation and rupture of a Cu filament was observed and analyzed in the TEM with energy dispersive x-ray (EDX) mapping. Since the overshoot current at the resistive switching was efficiently suppressed by a MOSFET placed in the TEM holder, stable and reproducible ReRAM switching operations were achieved in the TEM.

Original languageEnglish
Title of host publication2015 IEEE 7th International Memory Workshop, IMW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467369312
DOIs
Publication statusPublished - Jul 2 2015
Externally publishedYes
Event2015 7th IEEE International Memory Workshop, IMW 2015 - Monterey, United States
Duration: May 17 2015May 20 2015

Publication series

Name2015 IEEE 7th International Memory Workshop, IMW 2015

Conference

Conference2015 7th IEEE International Memory Workshop, IMW 2015
CountryUnited States
CityMonterey
Period5/17/155/20/15

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Software
  • Electrical and Electronic Engineering
  • Computer Science Applications

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