Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM

Masaki Kudo; Masashi Arita; Yasuo Takahashi; Kazuhiro Ohba; Masayuki Shimuta; Ichiro Fujiwara

doi:10.1109/IMW.2015.7150312

Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM

Masaki Kudo, Masashi Arita, Yasuo Takahashi, Kazuhiro Ohba, Masayuki Shimuta, Ichiro Fujiwara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time during in-situ TEM observation. A TEM sample of the CBRAM cells was processed by a focused ion beam method. The formation and rupture of a Cu filament was observed and analyzed in the TEM with energy dispersive x-ray (EDX) mapping. Since the overshoot current at the resistive switching was efficiently suppressed by a MOSFET placed in the TEM holder, stable and reproducible ReRAM switching operations were achieved in the TEM.

Original language	English
Title of host publication	2015 IEEE 7th International Memory Workshop, IMW 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467369312
DOIs	https://doi.org/10.1109/IMW.2015.7150312
Publication status	Published - Jul 2 2015
Externally published	Yes
Event	2015 7th IEEE International Memory Workshop, IMW 2015 - Monterey, United States Duration: May 17 2015 → May 20 2015

Publication series

Name	2015 IEEE 7th International Memory Workshop, IMW 2015

Conference

Conference	2015 7th IEEE International Memory Workshop, IMW 2015
Country/Territory	United States
City	Monterey
Period	5/17/15 → 5/20/15

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Software
Electrical and Electronic Engineering
Computer Science Applications

Access to Document

10.1109/IMW.2015.7150312

Cite this

Kudo, M., Arita, M., Takahashi, Y., Ohba, K., Shimuta, M., & Fujiwara, I. (2015). Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM. In 2015 IEEE 7th International Memory Workshop, IMW 2015 [7150312] (2015 IEEE 7th International Memory Workshop, IMW 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMW.2015.7150312

Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM. / Kudo, Masaki; Arita, Masashi; Takahashi, Yasuo et al.
2015 IEEE 7th International Memory Workshop, IMW 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7150312 (2015 IEEE 7th International Memory Workshop, IMW 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kudo, M, Arita, M, Takahashi, Y, Ohba, K, Shimuta, M & Fujiwara, I 2015, Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM. in 2015 IEEE 7th International Memory Workshop, IMW 2015., 7150312, 2015 IEEE 7th International Memory Workshop, IMW 2015, Institute of Electrical and Electronics Engineers Inc., 2015 7th IEEE International Memory Workshop, IMW 2015, Monterey, United States, 5/17/15. https://doi.org/10.1109/IMW.2015.7150312

Kudo M, Arita M, Takahashi Y, Ohba K, Shimuta M, Fujiwara I. Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM. In 2015 IEEE 7th International Memory Workshop, IMW 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7150312. (2015 IEEE 7th International Memory Workshop, IMW 2015). doi: 10.1109/IMW.2015.7150312

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title = "Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM",

abstract = "The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time during in-situ TEM observation. A TEM sample of the CBRAM cells was processed by a focused ion beam method. The formation and rupture of a Cu filament was observed and analyzed in the TEM with energy dispersive x-ray (EDX) mapping. Since the overshoot current at the resistive switching was efficiently suppressed by a MOSFET placed in the TEM holder, stable and reproducible ReRAM switching operations were achieved in the TEM.",

author = "Masaki Kudo and Masashi Arita and Yasuo Takahashi and Kazuhiro Ohba and Masayuki Shimuta and Ichiro Fujiwara",

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N2 - The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time during in-situ TEM observation. A TEM sample of the CBRAM cells was processed by a focused ion beam method. The formation and rupture of a Cu filament was observed and analyzed in the TEM with energy dispersive x-ray (EDX) mapping. Since the overshoot current at the resistive switching was efficiently suppressed by a MOSFET placed in the TEM holder, stable and reproducible ReRAM switching operations were achieved in the TEM.

AB - The paper shows clear evidence that in-situ transmission electron microscopy (TEM) can be used as a powerful tool to analyze ReRAM operation. Reproducible resistive switching of 100k cycles in 30- or 70-nm Cu-Te CBRAMs was achieved for the first time during in-situ TEM observation. A TEM sample of the CBRAM cells was processed by a focused ion beam method. The formation and rupture of a Cu filament was observed and analyzed in the TEM with energy dispersive x-ray (EDX) mapping. Since the overshoot current at the resistive switching was efficiently suppressed by a MOSFET placed in the TEM holder, stable and reproducible ReRAM switching operations were achieved in the TEM.

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Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM

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