Voltage-driven strain-induced coexistence of both volatile and non-volatile interfacial magnetoelectric behaviors in LSMO/PMN-PT (0 0 1)

Satya Prakash Pati, Tomoyasu Taniyama

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We report on the inhomogeneous electric field response of the magnetization in a La1-xSrxMnO3 (LSMO) film on a ferroelectric [Pb(Mg1/2Nb2/3)O3]1-x-[PbTiO3]x (PMN-PT) substrate. X-ray diffraction patterns of the LSMO film confirm successful epitaxial growth of LSMO along the [0 0 1] orientation of PMN-PT, where a sudden lattice relaxation in the LSMO film occurs due to a large lattice mismatch. The LSMO film exhibits magnetic anisotropy that lies in-plane and isotropic in all directions of the plane with a Curie temperature of 345 K. The polarization versus electric field (P-E) loop shows that a sharp switching of electric dipoles occurs and the switching field decreases with decreasing maximum applied electric field. The coexistence of hysteresis-like (non-volatile) and butterfly-like (volatile) behavior of the voltage induced Kerr signal is observed. We consider that 109° switching of the ferroelectric domains is responsible for the rotation of magnetic easy axis that results in the hysteresis like behavior while 71° and 180° switching of the ferroelectric polarization has no effect on the magnetic anisotropy, leading to the butterfly-like behavior.

Original languageEnglish
Article number054003
JournalJournal of Physics D: Applied Physics
Volume53
Issue number5
DOIs
Publication statusPublished - 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Fingerprint

Dive into the research topics of 'Voltage-driven strain-induced coexistence of both volatile and non-volatile interfacial magnetoelectric behaviors in LSMO/PMN-PT (0 0 1)'. Together they form a unique fingerprint.

Cite this