Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications

Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated the relation between photoluminescence and current collapse of AlGaN/GaN HEMT wafers grown on silicon substrates. A very good correlation between yellow luminescence intensity and current collapse was found. By optimizing the growth condition to diminish the intensity of yellow luminescence, we obtained AlGaN/GaN HEMT wafers with very small current collapse. It is concluded that the yellow luminescence should be utilized as a very useful index for improving the wafer quality.

Original languageEnglish
Title of host publication2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
Publication statusPublished - Dec 1 2008
Externally publishedYes
Event23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 - Chicago, IL, United States
Duration: Apr 14 2008Apr 17 2008

Publication series

Name2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Conference

Conference23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
CountryUnited States
CityChicago, IL
Period4/14/084/17/08

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Fujimoto, H., Saito, W., Yoshioka, A., Nitta, T., Kakiuchi, Y., & Saito, Y. (2008). Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications. In 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 (2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008).