Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications

Hidetoshi Fujimoto; Wataru Saito; Akira Yoshioka; Tomohiro Nitta; Yorito Kakiuchi; Yasunobu Saito

Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications

Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the relation between photoluminescence and current collapse of AlGaN/GaN HEMT wafers grown on silicon substrates. A very good correlation between yellow luminescence intensity and current collapse was found. By optimizing the growth condition to diminish the intensity of yellow luminescence, we obtained AlGaN/GaN HEMT wafers with very small current collapse. It is concluded that the yellow luminescence should be utilized as a very useful index for improving the wafer quality.

Original language	English
Title of host publication	2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
Publication status	Published - Dec 1 2008
Externally published	Yes
Event	23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 - Chicago, IL, United States Duration: Apr 14 2008 → Apr 17 2008

Publication series

Name	2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Conference

Conference	23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
Country/Territory	United States
City	Chicago, IL
Period	4/14/08 → 4/17/08

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Fujimoto, H., Saito, W., Yoshioka, A., Nitta, T., Kakiuchi, Y., & Saito, Y. (2008). Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications. In 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 (2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008).

Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications. / Fujimoto, Hidetoshi; Saito, Wataru; Yoshioka, Akira et al.
2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008. 2008. (2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujimoto, H, Saito, W, Yoshioka, A, Nitta, T, Kakiuchi, Y & Saito, Y 2008, Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications. in 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008. 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008, 23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008, Chicago, IL, United States, 4/14/08.

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abstract = "We investigated the relation between photoluminescence and current collapse of AlGaN/GaN HEMT wafers grown on silicon substrates. A very good correlation between yellow luminescence intensity and current collapse was found. By optimizing the growth condition to diminish the intensity of yellow luminescence, we obtained AlGaN/GaN HEMT wafers with very small current collapse. It is concluded that the yellow luminescence should be utilized as a very useful index for improving the wafer quality.",

author = "Hidetoshi Fujimoto and Wataru Saito and Akira Yoshioka and Tomohiro Nitta and Yorito Kakiuchi and Yasunobu Saito",

year = "2008",

month = dec,

day = "1",

language = "English",

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series = "2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008",

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T1 - Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications

AU - Fujimoto, Hidetoshi

AU - Saito, Wataru

AU - Yoshioka, Akira

AU - Nitta, Tomohiro

AU - Kakiuchi, Yorito

AU - Saito, Yasunobu

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We investigated the relation between photoluminescence and current collapse of AlGaN/GaN HEMT wafers grown on silicon substrates. A very good correlation between yellow luminescence intensity and current collapse was found. By optimizing the growth condition to diminish the intensity of yellow luminescence, we obtained AlGaN/GaN HEMT wafers with very small current collapse. It is concluded that the yellow luminescence should be utilized as a very useful index for improving the wafer quality.

AB - We investigated the relation between photoluminescence and current collapse of AlGaN/GaN HEMT wafers grown on silicon substrates. A very good correlation between yellow luminescence intensity and current collapse was found. By optimizing the growth condition to diminish the intensity of yellow luminescence, we obtained AlGaN/GaN HEMT wafers with very small current collapse. It is concluded that the yellow luminescence should be utilized as a very useful index for improving the wafer quality.

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M3 - Conference contribution

AN - SCOPUS:84887477946

SN - 1893580113

SN - 9781893580114

T3 - 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

BT - 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

T2 - 23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Y2 - 14 April 2008 through 17 April 2008

ER -

Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

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