TY - GEN
T1 - Wafer requirement for future power devices
AU - Nishizawa, Shin Ichi
PY - 2016/1/5
Y1 - 2016/1/5
N2 - For the future power electronics system, one of the key issues is to achieve more high power densities. At the moment, several types of silicon devices are widely used from the low voltage to high voltage ranges. To achieve more high power densities by size reduction and more high operating temperature, not only the device but also wafer material should be improved. The current status and future prospect of PE system with silicon technology will be discussed. Then, the role of compound semiconductor and its devices will be also discussed by comparison with silicon PE system.
AB - For the future power electronics system, one of the key issues is to achieve more high power densities. At the moment, several types of silicon devices are widely used from the low voltage to high voltage ranges. To achieve more high power densities by size reduction and more high operating temperature, not only the device but also wafer material should be improved. The current status and future prospect of PE system with silicon technology will be discussed. Then, the role of compound semiconductor and its devices will be also discussed by comparison with silicon PE system.
UR - http://www.scopus.com/inward/record.url?scp=84962172856&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84962172856&partnerID=8YFLogxK
U2 - 10.1109/TENCON.2015.7372890
DO - 10.1109/TENCON.2015.7372890
M3 - Conference contribution
AN - SCOPUS:84962172856
T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON
BT - TENCON 2015 - 2015 IEEE Region 10 Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 35th IEEE Region 10 Conference, TENCON 2015
Y2 - 1 November 2015 through 4 November 2015
ER -