Wafer requirement for future power devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For the future power electronics system, one of the key issues is to achieve more high power densities. At the moment, several types of silicon devices are widely used from the low voltage to high voltage ranges. To achieve more high power densities by size reduction and more high operating temperature, not only the device but also wafer material should be improved. The current status and future prospect of PE system with silicon technology will be discussed. Then, the role of compound semiconductor and its devices will be also discussed by comparison with silicon PE system.

Original languageEnglish
Title of host publicationTENCON 2015 - 2015 IEEE Region 10 Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479986415
DOIs
Publication statusPublished - Jan 5 2016
Externally publishedYes
Event35th IEEE Region 10 Conference, TENCON 2015 - Macau, Macao
Duration: Nov 1 2015Nov 4 2015

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
Volume2016-January
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450

Other

Other35th IEEE Region 10 Conference, TENCON 2015
CountryMacao
CityMacau
Period11/1/1511/4/15

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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  • Cite this

    Nishizawa, S. I. (2016). Wafer requirement for future power devices. In TENCON 2015 - 2015 IEEE Region 10 Conference [7372890] (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2016-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TENCON.2015.7372890