Wafer requirement for future power devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For the future power electronics system, one of the key issues is to achieve more high power densities. At the moment, several types of silicon devices are widely used from the low voltage to high voltage ranges. To achieve more high power densities by size reduction and more high operating temperature, not only the device but also wafer material should be improved. The current status and future prospect of PE system with silicon technology will be discussed. Then, the role of compound semiconductor and its devices will be also discussed by comparison with silicon PE system.

Original languageEnglish
Title of host publicationTENCON 2015 - 2015 IEEE Region 10 Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479986415
DOIs
Publication statusPublished - Jan 5 2016
Event35th IEEE Region 10 Conference, TENCON 2015 - Macau, Macao
Duration: Nov 1 2015Nov 4 2015

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
Volume2016-January
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450

Other

Other35th IEEE Region 10 Conference, TENCON 2015
CountryMacao
CityMacau
Period11/1/1511/4/15

Fingerprint

Silicon
Electric potential
Power electronics
Semiconductor materials
Temperature

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Nishizawa, S. I. (2016). Wafer requirement for future power devices. In TENCON 2015 - 2015 IEEE Region 10 Conference [7372890] (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2016-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TENCON.2015.7372890

Wafer requirement for future power devices. / Nishizawa, Shin Ichi.

TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 2016. 7372890 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2016-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishizawa, SI 2016, Wafer requirement for future power devices. in TENCON 2015 - 2015 IEEE Region 10 Conference., 7372890, IEEE Region 10 Annual International Conference, Proceedings/TENCON, vol. 2016-January, Institute of Electrical and Electronics Engineers Inc., 35th IEEE Region 10 Conference, TENCON 2015, Macau, Macao, 11/1/15. https://doi.org/10.1109/TENCON.2015.7372890
Nishizawa SI. Wafer requirement for future power devices. In TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc. 2016. 7372890. (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2015.7372890
Nishizawa, Shin Ichi. / Wafer requirement for future power devices. TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 2016. (IEEE Region 10 Annual International Conference, Proceedings/TENCON).
@inproceedings{4450c836ec374fe79fa1b1c498891c9d,
title = "Wafer requirement for future power devices",
abstract = "For the future power electronics system, one of the key issues is to achieve more high power densities. At the moment, several types of silicon devices are widely used from the low voltage to high voltage ranges. To achieve more high power densities by size reduction and more high operating temperature, not only the device but also wafer material should be improved. The current status and future prospect of PE system with silicon technology will be discussed. Then, the role of compound semiconductor and its devices will be also discussed by comparison with silicon PE system.",
author = "Nishizawa, {Shin Ichi}",
year = "2016",
month = "1",
day = "5",
doi = "10.1109/TENCON.2015.7372890",
language = "English",
series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "TENCON 2015 - 2015 IEEE Region 10 Conference",
address = "United States",

}

TY - GEN

T1 - Wafer requirement for future power devices

AU - Nishizawa, Shin Ichi

PY - 2016/1/5

Y1 - 2016/1/5

N2 - For the future power electronics system, one of the key issues is to achieve more high power densities. At the moment, several types of silicon devices are widely used from the low voltage to high voltage ranges. To achieve more high power densities by size reduction and more high operating temperature, not only the device but also wafer material should be improved. The current status and future prospect of PE system with silicon technology will be discussed. Then, the role of compound semiconductor and its devices will be also discussed by comparison with silicon PE system.

AB - For the future power electronics system, one of the key issues is to achieve more high power densities. At the moment, several types of silicon devices are widely used from the low voltage to high voltage ranges. To achieve more high power densities by size reduction and more high operating temperature, not only the device but also wafer material should be improved. The current status and future prospect of PE system with silicon technology will be discussed. Then, the role of compound semiconductor and its devices will be also discussed by comparison with silicon PE system.

UR - http://www.scopus.com/inward/record.url?scp=84962172856&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84962172856&partnerID=8YFLogxK

U2 - 10.1109/TENCON.2015.7372890

DO - 10.1109/TENCON.2015.7372890

M3 - Conference contribution

AN - SCOPUS:84962172856

T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON

BT - TENCON 2015 - 2015 IEEE Region 10 Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -