Abstract
Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.
| Original language | English |
|---|---|
| Title of host publication | 17th International Workshop on Junction Technology, IWJT 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 19-20 |
| Number of pages | 2 |
| ISBN (Electronic) | 9784863486263 |
| DOIs | |
| Publication status | Published - Jun 30 2017 |
| Event | 17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan Duration: Jun 1 2017 → Jun 2 2017 |
Publication series
| Name | 17th International Workshop on Junction Technology, IWJT 2017 |
|---|
Other
| Other | 17th International Workshop on Junction Technology, IWJT 2017 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 6/1/17 → 6/2/17 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration. / Sugino, Takayuki; Moto, Kenta; Ikenoue, Hiroshi; Miyao, Masanobu; Sadoh, Taizoh.
17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 19-20 7966502 (17th International Workshop on Junction Technology, IWJT 2017).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration
AU - Sugino, Takayuki
AU - Moto, Kenta
AU - Ikenoue, Hiroshi
AU - Miyao, Masanobu
AU - Sadoh, Taizoh
PY - 2017/6/30
Y1 - 2017/6/30
N2 - Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.
AB - Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.
UR - http://www.scopus.com/inward/record.url?scp=85026765165&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85026765165&partnerID=8YFLogxK
U2 - 10.23919/IWJT.2017.7966502
DO - 10.23919/IWJT.2017.7966502
M3 - Conference contribution
AN - SCOPUS:85026765165
T3 - 17th International Workshop on Junction Technology, IWJT 2017
SP - 19
EP - 20
BT - 17th International Workshop on Junction Technology, IWJT 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -