Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration

Takayuki Sugino, Kenta Moto, Hiroshi Ikenoue, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.

Original languageEnglish
Title of host publication17th International Workshop on Junction Technology, IWJT 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages19-20
Number of pages2
ISBN (Electronic)9784863486263
DOIs
Publication statusPublished - Jun 30 2017
Event17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan
Duration: Jun 1 2017Jun 2 2017

Publication series

Name17th International Workshop on Junction Technology, IWJT 2017

Other

Other17th International Workshop on Junction Technology, IWJT 2017
Country/TerritoryJapan
CityKyoto
Period6/1/176/2/17

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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