@inproceedings{8c9e42f629f543a89862723b78ba70fc,
title = "Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration",
abstract = "Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.",
author = "Takayuki Sugino and Kenta Moto and Hiroshi Ikenoue and Masanobu Miyao and Taizoh Sadoh",
year = "2017",
month = jun,
day = "30",
doi = "10.23919/IWJT.2017.7966502",
language = "English",
series = "17th International Workshop on Junction Technology, IWJT 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "19--20",
booktitle = "17th International Workshop on Junction Technology, IWJT 2017",
address = "United States",
note = "17th International Workshop on Junction Technology, IWJT 2017 ; Conference date: 01-06-2017 Through 02-06-2017",
}