Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration

Takayuki Sugino, Kenta Moto, Hiroshi Ikenoue, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.

Original languageEnglish
Title of host publication17th International Workshop on Junction Technology, IWJT 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages19-20
Number of pages2
ISBN (Electronic)9784863486263
DOIs
Publication statusPublished - Jun 30 2017
Event17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan
Duration: Jun 1 2017Jun 2 2017

Publication series

Name17th International Workshop on Junction Technology, IWJT 2017

Other

Other17th International Workshop on Junction Technology, IWJT 2017
CountryJapan
CityKyoto
Period6/1/176/2/17

Fingerprint

Laser beam effects
Crystallization
Band structure
Carrier mobility
Thin film transistors
Electron transitions
Optical devices
Plastics
Temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Sugino, T., Moto, K., Ikenoue, H., Miyao, M., & Sadoh, T. (2017). Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration. In 17th International Workshop on Junction Technology, IWJT 2017 (pp. 19-20). [7966502] (17th International Workshop on Junction Technology, IWJT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IWJT.2017.7966502

Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration. / Sugino, Takayuki; Moto, Kenta; Ikenoue, Hiroshi; Miyao, Masanobu; Sadoh, Taizoh.

17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 19-20 7966502 (17th International Workshop on Junction Technology, IWJT 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sugino, T, Moto, K, Ikenoue, H, Miyao, M & Sadoh, T 2017, Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration. in 17th International Workshop on Junction Technology, IWJT 2017., 7966502, 17th International Workshop on Junction Technology, IWJT 2017, Institute of Electrical and Electronics Engineers Inc., pp. 19-20, 17th International Workshop on Junction Technology, IWJT 2017, Kyoto, Japan, 6/1/17. https://doi.org/10.23919/IWJT.2017.7966502
Sugino T, Moto K, Ikenoue H, Miyao M, Sadoh T. Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration. In 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 19-20. 7966502. (17th International Workshop on Junction Technology, IWJT 2017). https://doi.org/10.23919/IWJT.2017.7966502
Sugino, Takayuki ; Moto, Kenta ; Ikenoue, Hiroshi ; Miyao, Masanobu ; Sadoh, Taizoh. / Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration. 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 19-20 (17th International Workshop on Junction Technology, IWJT 2017).
@inproceedings{8c9e42f629f543a89862723b78ba70fc,
title = "Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration",
abstract = "Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8{\%}) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8{\%}) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.",
author = "Takayuki Sugino and Kenta Moto and Hiroshi Ikenoue and Masanobu Miyao and Taizoh Sadoh",
year = "2017",
month = "6",
day = "30",
doi = "10.23919/IWJT.2017.7966502",
language = "English",
series = "17th International Workshop on Junction Technology, IWJT 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "19--20",
booktitle = "17th International Workshop on Junction Technology, IWJT 2017",
address = "United States",

}

TY - GEN

T1 - Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration

AU - Sugino, Takayuki

AU - Moto, Kenta

AU - Ikenoue, Hiroshi

AU - Miyao, Masanobu

AU - Sadoh, Taizoh

PY - 2017/6/30

Y1 - 2017/6/30

N2 - Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.

AB - Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.

UR - http://www.scopus.com/inward/record.url?scp=85026765165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85026765165&partnerID=8YFLogxK

U2 - 10.23919/IWJT.2017.7966502

DO - 10.23919/IWJT.2017.7966502

M3 - Conference contribution

AN - SCOPUS:85026765165

T3 - 17th International Workshop on Junction Technology, IWJT 2017

SP - 19

EP - 20

BT - 17th International Workshop on Junction Technology, IWJT 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -