We propose the notion of counting the number of activated spins to identify the weak localization properties of graphene under effects of inter-valley scattering, intrinsic and Rashba spin-orbit interactions (SOI). It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.
|Number of pages||6|
|Publication status||Published - Jan 31 2010|
|Event||14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan|
Duration: Jul 13 2009 → Jul 17 2009
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)