Wide-band high-efficiency optical-to-electrical conversion stimulus probe heads for testing large-signal responses of high-speed electronic devices

Taiichi Otsuji, Kazutoshi Kato, Shunji Kimura, Tadao Nagatsuma

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Wide-band high-efficiency optical-to-electrical conversion stimulus probe heads have been developed for testing large-signal responses of high-speed electronic devices. Two types of such probes were demonstrated using a 1.55-μm 85-GHz-bandwidth waveguide p-i-n photodiode. The type-I probe employs a simple semirigid coaxial cable with a bias network for the electrical-signal transmission, resulting in a very low modal dispersion of < 1.0 ps. The highest -3-dB bandwidth of 60 GHz was obtained for an output voltage of 250 mVp-p, and was maintained beyond 50 GHz for output voltages of up to 400 mVp-p. The type-II probe employs a broad-band InP high electron-mobility transistor distributed amplifier that boosts the electrical output signal amplitude over 1 Vp-p. The -3-dB bandwidth is 40 (35) GHz for output voltages up to 500 (1000) mVp-p.

Original languageEnglish
Pages (from-to)525-533
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume47
Issue number5
DOIs
Publication statusPublished - Jan 1 1999
Externally publishedYes

Fingerprint

stimuli
high speed
broadband
probes
output
Testing
bandwidth
Bandwidth
electronics
Electric potential
electric potential
transistor amplifiers
distributed amplifiers
coaxial cables
Coaxial cables
signal transmission
High electron mobility transistors
Photodiodes
acceleration (physics)
high electron mobility transistors

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Wide-band high-efficiency optical-to-electrical conversion stimulus probe heads have been developed for testing large-signal responses of high-speed electronic devices. Two types of such probes were demonstrated using a 1.55-μm 85-GHz-bandwidth waveguide p-i-n photodiode. The type-I probe employs a simple semirigid coaxial cable with a bias network for the electrical-signal transmission, resulting in a very low modal dispersion of < 1.0 ps. The highest -3-dB bandwidth of 60 GHz was obtained for an output voltage of 250 mVp-p, and was maintained beyond 50 GHz for output voltages of up to 400 mVp-p. The type-II probe employs a broad-band InP high electron-mobility transistor distributed amplifier that boosts the electrical output signal amplitude over 1 Vp-p. The -3-dB bandwidth is 40 (35) GHz for output voltages up to 500 (1000) mVp-p.",
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