Wide bandgap engineering of (AlGa)2O3 films

Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Qixin Guo

Research output: Contribution to journalArticlepeer-review

110 Citations (Scopus)


Bandgap tunable (AlGa)2O3 films were deposited on sapphire substrates by pulsed laser deposition (PLD). The deposited films are of high transmittance as measured by spectrophotometer. The Al content in films is almost the same as that in targets. The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy is proved to be valid for determining the bandgap of (AlGa)2O3 films as it is in good agreement with the bandgap values from transmittance spectra. The measured bandgap of (AlGa)2O3 films increases continuously with the Al content covering the whole Al content range from about 5 to 7 eV, indicating PLD is a promising growth technology for growing bandgap tunable (AlGa)2O3 films.

Original languageEnglish
Article number162107
JournalApplied Physics Letters
Issue number16
Publication statusPublished - Oct 20 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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