Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A ZrN contact on a Ge substrate can alleviate the intrinsic Fermi-level pinning (FLP) position toward conduction band edge, which is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the interfaces. Since the a-IL could be retained on the Ge surface, we demonstrated a wide range Schottky barrier height (SBH) control for metal/a-IL/Ge contacts. The sputtering power for ZrN affects the SBH, pinning factor (S), and effective charge neutral level. A high S value of 0.26 was achieved, which is comparable to that of metal/Si contacts. A model was proposed for explaining the mechanism of this effective FLP alleviation.

Original languageEnglish
Article number114011
JournalSemiconductor Science and Technology
Volume33
Issue number11
DOIs
Publication statusPublished - Oct 17 2018

Fingerprint

trajectory control
Sputter deposition
interlayers
Nitrogen
Metals
Fermi level
nitrogen
metals
Conduction bands
nitrogen atoms
Sputtering
conduction bands
sputtering
Atoms
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{520e3583883046198bbbdfa1b92a2ad1,
title = "Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition",
abstract = "A ZrN contact on a Ge substrate can alleviate the intrinsic Fermi-level pinning (FLP) position toward conduction band edge, which is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the interfaces. Since the a-IL could be retained on the Ge surface, we demonstrated a wide range Schottky barrier height (SBH) control for metal/a-IL/Ge contacts. The sputtering power for ZrN affects the SBH, pinning factor (S), and effective charge neutral level. A high S value of 0.26 was achieved, which is comparable to that of metal/Si contacts. A model was proposed for explaining the mechanism of this effective FLP alleviation.",
author = "K. Yamamoto and R. Noguchi and M. Mitsuhara and M. Nishida and T. Hara and D. Wang and H. Nakashima",
year = "2018",
month = "10",
day = "17",
doi = "10.1088/1361-6641/aae4bd",
language = "English",
volume = "33",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "11",

}

TY - JOUR

T1 - Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition

AU - Yamamoto, K.

AU - Noguchi, R.

AU - Mitsuhara, M.

AU - Nishida, M.

AU - Hara, T.

AU - Wang, D.

AU - Nakashima, H.

PY - 2018/10/17

Y1 - 2018/10/17

N2 - A ZrN contact on a Ge substrate can alleviate the intrinsic Fermi-level pinning (FLP) position toward conduction band edge, which is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the interfaces. Since the a-IL could be retained on the Ge surface, we demonstrated a wide range Schottky barrier height (SBH) control for metal/a-IL/Ge contacts. The sputtering power for ZrN affects the SBH, pinning factor (S), and effective charge neutral level. A high S value of 0.26 was achieved, which is comparable to that of metal/Si contacts. A model was proposed for explaining the mechanism of this effective FLP alleviation.

AB - A ZrN contact on a Ge substrate can alleviate the intrinsic Fermi-level pinning (FLP) position toward conduction band edge, which is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the interfaces. Since the a-IL could be retained on the Ge surface, we demonstrated a wide range Schottky barrier height (SBH) control for metal/a-IL/Ge contacts. The sputtering power for ZrN affects the SBH, pinning factor (S), and effective charge neutral level. A high S value of 0.26 was achieved, which is comparable to that of metal/Si contacts. A model was proposed for explaining the mechanism of this effective FLP alleviation.

UR - http://www.scopus.com/inward/record.url?scp=85055315211&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85055315211&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aae4bd

DO - 10.1088/1361-6641/aae4bd

M3 - Article

AN - SCOPUS:85055315211

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

M1 - 114011

ER -