X-ray diffraction study of cubic-phase AlN thin films grown on sapphire(0001) substrates by pulsed laser deposition

Kazushi Sumitani, Ryota Ohtani, Tomohiro Yoshida, Satoshi Mohri, Tsuyoshi Yoshitake

    Research output: Contribution to journalConference article

    4 Citations (Scopus)

    Abstract

    Cubic-phase AlN thin films were fabricated on sapphire(0001) substrates by pulsed laser deposition at an extremely high-pressure ambient nitrogen. The crystallographic properties of the films were evaluated using X-ray diffraction techniques. The θ-2θ measurements showed diffraction peaks originating from different c-AlN structure between the films grown in the nitrogen atmosphere at 30 Torr and 80 Torr, which implied that the structural phase of c-AlN films was sensitive to the pressure of the ambient nitrogen. We investigated the details of the AlN 11̄1 diffraction spots from the films at 80 Torr and revealed that the films were epitaxially grown on the substrates with the relationship ofc-AlN(111)[12̄1]//Al2O 3(0001)[112̄0].

    Original languageEnglish
    Article number012017
    JournalIOP Conference Series: Materials Science and Engineering
    Volume24
    Issue number1
    DOIs
    Publication statusPublished - Nov 22 2011
    Event2010 Summer Workshop on Buried Interface Science with X-Rays and Neutrons - Nagoya, Japan
    Duration: Jul 25 2010Jul 27 2010

    Fingerprint

    Aluminum Oxide
    Pulsed laser deposition
    Sapphire
    X ray diffraction
    Thin films
    Substrates
    Nitrogen
    Diffraction

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Engineering(all)

    Cite this

    X-ray diffraction study of cubic-phase AlN thin films grown on sapphire(0001) substrates by pulsed laser deposition. / Sumitani, Kazushi; Ohtani, Ryota; Yoshida, Tomohiro; Mohri, Satoshi; Yoshitake, Tsuyoshi.

    In: IOP Conference Series: Materials Science and Engineering, Vol. 24, No. 1, 012017, 22.11.2011.

    Research output: Contribution to journalConference article

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    abstract = "Cubic-phase AlN thin films were fabricated on sapphire(0001) substrates by pulsed laser deposition at an extremely high-pressure ambient nitrogen. The crystallographic properties of the films were evaluated using X-ray diffraction techniques. The θ-2θ measurements showed diffraction peaks originating from different c-AlN structure between the films grown in the nitrogen atmosphere at 30 Torr and 80 Torr, which implied that the structural phase of c-AlN films was sensitive to the pressure of the ambient nitrogen. We investigated the details of the AlN 11̄1 diffraction spots from the films at 80 Torr and revealed that the films were epitaxially grown on the substrates with the relationship ofc-AlN(111)[12̄1]//Al2O 3(0001)[112̄0].",
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    AU - Sumitani, Kazushi

    AU - Ohtani, Ryota

    AU - Yoshida, Tomohiro

    AU - Mohri, Satoshi

    AU - Yoshitake, Tsuyoshi

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    N2 - Cubic-phase AlN thin films were fabricated on sapphire(0001) substrates by pulsed laser deposition at an extremely high-pressure ambient nitrogen. The crystallographic properties of the films were evaluated using X-ray diffraction techniques. The θ-2θ measurements showed diffraction peaks originating from different c-AlN structure between the films grown in the nitrogen atmosphere at 30 Torr and 80 Torr, which implied that the structural phase of c-AlN films was sensitive to the pressure of the ambient nitrogen. We investigated the details of the AlN 11̄1 diffraction spots from the films at 80 Torr and revealed that the films were epitaxially grown on the substrates with the relationship ofc-AlN(111)[12̄1]//Al2O 3(0001)[112̄0].

    AB - Cubic-phase AlN thin films were fabricated on sapphire(0001) substrates by pulsed laser deposition at an extremely high-pressure ambient nitrogen. The crystallographic properties of the films were evaluated using X-ray diffraction techniques. The θ-2θ measurements showed diffraction peaks originating from different c-AlN structure between the films grown in the nitrogen atmosphere at 30 Torr and 80 Torr, which implied that the structural phase of c-AlN films was sensitive to the pressure of the ambient nitrogen. We investigated the details of the AlN 11̄1 diffraction spots from the films at 80 Torr and revealed that the films were epitaxially grown on the substrates with the relationship ofc-AlN(111)[12̄1]//Al2O 3(0001)[112̄0].

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