Nitrogen-doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) films were deposited by pulsed laser deposition (PLD). Nitrogen contents in the films were controlled by varying a ratio in the inflow amount between nitrogen and hydrogen gases. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18 Ω- 1 cm- 1 at 300 K. X-ray photoemission spectra, which were measured using synchrotron radiation, were decomposed into four component spectra due to sp2, sp3 hybridized carbons, C=N and C-N. A full-width at half-maximum of the sp3 peak was 0.91 eV. This small value is specific to UNCD/a-C:H films. The sp2/(sp3 + sp2) value was enhanced from 32 to 40% with an increase in the nitrogen content from 0 to 7.9 at.%. This increment probably originates from the nitrogen incorporation into an a-C:H matrix and grain boundaries of UNCD crystallites. Since an electrical conductivity of a-C:H does not dramatically enhance for this doping amount according to previous reports, we believe that the electrical conductivity enhancement is predominantly due to the nitrogen incorporation into grain boundaries.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering