X-ray topographic study of SiC crystal at high temperature

H. Yamaguchi, N. Oyanagi, T. Kato, Y. Takano, Shinichi Nishizawa, W. Bahng, S. Yoshida, K. Arai

Research output: Contribution to journalConference articlepeer-review

Abstract

We have developed an instrument for in-situ X-ray topography during crystal growth of silicon carbide (SiC). A vertical X-ray goniometer is combined with a furnace for sublimation growth. A high-power X-ray source and a TV imaging system using a CCD camera make possible to display the behaviors of defects in SiC crystal inside crucible. For a demonstration of the developed instrument, we show the topographs of a SiC crystal at high temperature. The topographs show distinct deformations developing with increasing temperature.

Original languageEnglish
JournalMaterials Science Forum
Volume338
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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