XRD and TEM studies of as-grown MgB2 thin films deposited on r- and c-plane sapphire substrates

A. Saito, H. Shimakage, A. Kawakami, Z. Wang, K. Kuroda, H. Abe, M. Naito, W. J. Moon, K. Kaneko, M. Mukaida, S. Ohshima

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8 Citations (Scopus)

Abstract

As-grown MgB2 thin films were deposited on r-plane (112) and c-plane (001) sapphire substrates by using a carrousel-type magnetron sputtering system. Even though the respective critical temperature and residual-resistivity ratio of the MgB2 films deposited on r- and c-plane sapphire substrates were nearly the same in both cases, the resistivity of the films on the c-plane sapphire substrates, ρ(40 K) about 50 μΩcm, were lower than that on the r-plane sapphire substrates, ρ(40 K) about 300 μΩcm. Standard θ/2θ X-ray diffraction measurements showed that the MgB2 thin films deposited on the c-plane sapphire substrates have c-axis orientation. Cross-sectional transmission electron microscope images showed that the MgB2 thin films deposited on both the r- and c-plane sapphire substrates contain columnar structures. According to the results of selected-area electron-diffraction patterns, the films deposited on the c-plane sapphire substrates had c-axis orientation and the films on the r-plane sapphire substrates including the amorphous MgB 2 also had c-axis orientation. These results indicate that selection of the cut-plane of the sapphire substrates is very important to grow the high-quality as-grown MgB2 thin films.

Original languageEnglish
Pages (from-to)1366-1370
Number of pages5
JournalPhysica C: Superconductivity and its applications
Volume412-414
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - Oct 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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