The chemical solution deposition (CSD) technique has been applied to prepare both YBa2Cu3O7-δ (YBCO) and buffer layers on a YSZ substrate. Y2O3 and CeO2 were employed as the buffer layers, and it was confirmed that they grew epitaxially by the CSD method. Cross-sectional transmission electron microscope observations revealed that Y2O3 grew up to the top of the film. Furthermore, the YBCO film on the Y2O3 or CeO2/Y2O3 layers were c-axis aligned and showed a good in-plane alignment. The transition temperature and the critical current density of the YBCO/Y2O3/YSZ multilayer were 89 K and 4 × 104 A/cm2 at 77 K, 0 T, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering