Zincblende and wurtzite phases in InN epilayers and their respective band transitions

P. Specht, J. C. Ho, X. Xu, R. Armitage, E. R. Weber, E. Erni, C. Kisielowski

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Zincblende and wurtzite phases of InN are found in InN epilayers deposited by molecular beam epitaxy on GaN buffers which were grown by metal organic chemical vapor deposition. Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in both phases of InN. GaN buffer layers were used as VEELS reference. The chemistry and crystalline structure of the observed areas was recorded simultaneously to exclude a contribution from oxides and/or metal clusters or extended defects such as grain boundaries. At room temperature a band transition for wurtzite InN was found at (1.7±0.2)eV and for zincblende InN at (1.4±0.2) eV that are ascribed to the fundamental bandgaps of the respective polytypes. Those values correlate well with recent results of various research groups measuring the bandgap in InGaN alloys with VEELS.

Original languageEnglish
Pages (from-to)225-229
Number of pages5
JournalJournal of Crystal Growth
Volume288
Issue number2
DOIs
Publication statusPublished - Mar 1 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Zincblende and wurtzite phases in InN epilayers and their respective band transitions'. Together they form a unique fingerprint.

Cite this