Zn-induced impurity levels in layer semiconductor InSe

S. Shigetomi, H. Ohkubo, T. Ikari, Hiroshi Nakashima

    Research output: Contribution to journalArticle

    21 Citations (Scopus)

    Abstract

    The impurity levels in Zn-doped InSe have been investigated by photoluminescence (PL), Hall effect (HE), and deep-level transient spectroscopy (DLTS). Previous analysis by PL spectra shows that the radiative transition is dominated by donor-Zn acceptor pairs. In the present work, a search was made for the deep acceptor level using the combined data from HE and DLTS measurements. We find that the deep acceptor level, which is associated with defects or defect complexes formed by Zn atoms in the interlayer, is located about 0.6 eV above the valence band.

    Original languageEnglish
    Pages (from-to)3647-3650
    Number of pages4
    JournalJournal of Applied Physics
    Volume66
    Issue number8
    DOIs
    Publication statusPublished - Dec 1 1989

    Fingerprint

    impurities
    Hall effect
    photoluminescence
    defects
    spectroscopy
    interlayers
    valence
    atoms

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

    Cite this

    Zn-induced impurity levels in layer semiconductor InSe. / Shigetomi, S.; Ohkubo, H.; Ikari, T.; Nakashima, Hiroshi.

    In: Journal of Applied Physics, Vol. 66, No. 8, 01.12.1989, p. 3647-3650.

    Research output: Contribution to journalArticle

    Shigetomi, S. ; Ohkubo, H. ; Ikari, T. ; Nakashima, Hiroshi. / Zn-induced impurity levels in layer semiconductor InSe. In: Journal of Applied Physics. 1989 ; Vol. 66, No. 8. pp. 3647-3650.
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