A single crystal domain texture quality (a unique in-plane and out-of-plane crystalline orientation over a large area) ZnO nanostructure of a dense nanowire array on a thick film has been homogeneously synthesized on a-plane sapphire substrates over large areas through a one-step chemical vapor deposition (CVD) process. The growth mechanism is clarified: a single crystal  oriented ZnAl2O4 buffer layer was formed at the ZnO film and the a-plane sapphire substrate interface via a diffusion reaction process during the CVD process, providing improved epitaxial conditions that enable the synthesis of the high crystalline quality ZnO nanowire array on a film structure. The high optoelectronic quality of the ZnO nanowire array on a film sample is evidenced by the free exitonic emissions in the low-temperature photoluminescence spectroscopy. A carrier density of ∼1017 cm-3 with an n-type conductivity of the ZnO nanowire array on a film sample is obtained by electrochemical impedance analysis. Finally, the ZnO nanowire array on a film sample is demonstrated to be an ideal template for a further synthesis of a single crystal quality ZnO-ZnGa2O4 core-shell nanowire array on a film structure. The fabricated ZnO-ZnGa2O4 sample revealed an enhanced anticorrosive ability and photoelectrochemical performance when used as a photoanode in a photoelectrochemical water splitting application.
|Publication status||Published - Dec 14 2012|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering