ZnS/SiO2 passivation layer for high-performance of TiO2/CuInS2 quantum dot sensitized solar cells

Hee Je Kim; Jin Ho Bae; Hyunwoong Seo; Masaharu Shiratani; Chandu Venkata Veera Muralee Gopi

doi:10.3390/en11081931

ZnS/SiO₂ passivation layer for high-performance of TiO₂/CuInS₂ quantum dot sensitized solar cells

Hee Je Kim, Jin Ho Bae, Hyunwoong Seo, Masaharu Shiratani, Chandu Venkata Veera Muralee Gopi

Electronic Devices

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO₂ blocking layer was deposited on TiO₂/CuInS₂ QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO₂/CuInS₂/ZnS/SiO₂ based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO₂/CuInS₂ (2.15%) and TiO₂/CuInS₂/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO₂ passivation layer on TiO₂/CuInS₂ suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

Original language	English
Article number	1931
Journal	Energies
Volume	11
Issue number	8
DOIs	https://doi.org/10.3390/en11081931
Publication status	Published - Aug 2018

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Fuel Technology
Energy Engineering and Power Technology
Energy (miscellaneous)
Control and Optimization
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.3390/en11081931

Cite this

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title = "ZnS/SiO2 passivation layer for high-performance of TiO2/CuInS2 quantum dot sensitized solar cells",

abstract = "Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.",

author = "Kim, {Hee Je} and Bae, {Jin Ho} and Hyunwoong Seo and Masaharu Shiratani and Gopi, {Chandu Venkata Veera Muralee}",

note = "Funding Information: Funding: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, ICT and Future planning (NRF-2016K2A9A2A08003717). Publisher Copyright: {\textcopyright} 2018 by the authors.",

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AU - Kim, Hee Je

AU - Bae, Jin Ho

AU - Seo, Hyunwoong

AU - Shiratani, Masaharu

AU - Gopi, Chandu Venkata Veera Muralee

N1 - Funding Information: Funding: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, ICT and Future planning (NRF-2016K2A9A2A08003717). Publisher Copyright: © 2018 by the authors.

PY - 2018/8

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N2 - Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

AB - Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

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