ZnS/SiO2 passivation layer for high-performance of TiO2/CuInS2 quantum dot sensitized solar cells

Hee Je Kim, Jin Ho Bae, Hyunwoong Seo, Masaharu Shiratani, Chandu Venkata Veera Muralee Gopi

Research output: Contribution to journalArticle

Abstract

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

Original languageEnglish
Article number1931
JournalEnergies
Volume11
Issue number8
DOIs
Publication statusPublished - Aug 1 2018

Fingerprint

Passivation
TiO2
SiO2
Solar Cells
Quantum Dots
Semiconductor quantum dots
Solar cells
High Performance
Electrolytes
Electrolyte
Recombination
Charge
Open circuit voltage
Conversion efficiency
Spectroscopy
Electrons
Impedance
Lifetime
Voltage
Decay

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Energy (miscellaneous)
  • Control and Optimization
  • Electrical and Electronic Engineering

Cite this

ZnS/SiO2 passivation layer for high-performance of TiO2/CuInS2 quantum dot sensitized solar cells. / Kim, Hee Je; Bae, Jin Ho; Seo, Hyunwoong; Shiratani, Masaharu; Gopi, Chandu Venkata Veera Muralee.

In: Energies, Vol. 11, No. 8, 1931, 01.08.2018.

Research output: Contribution to journalArticle

Kim, Hee Je ; Bae, Jin Ho ; Seo, Hyunwoong ; Shiratani, Masaharu ; Gopi, Chandu Venkata Veera Muralee. / ZnS/SiO2 passivation layer for high-performance of TiO2/CuInS2 quantum dot sensitized solar cells. In: Energies. 2018 ; Vol. 11, No. 8.
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