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ギガフォトンNext GLP共同研究部門
大学院(研究院)
システム情報科学研究院
概要
フィンガープリント
ネットワーク
研究成果
(78)
フィンガープリント
ギガフォトンNext GLP共同研究部門が活動している研究トピックを掘り下げます。これらのトピックラベルは、この組織のメンバーの研究成果に基づきます。これらがまとまってユニークなフィンガープリントを構成します。
並べ替え順
重み付け
アルファベット順
Physics
Ablation
12%
Air
7%
Aluminium
27%
Annealing
9%
Area
18%
Atoms
28%
Coating
7%
Cooling
11%
Crystallization
24%
Crystals
21%
Defects
7%
Diamonds
22%
Diffusivity
12%
Diode
18%
Electric Potential
6%
Electrical Properties
6%
Electrical Resistivity
12%
Electrodes
7%
Electron Density
7%
Excimer Laser
100%
Fabrication
22%
Film Thickness
8%
Fluence
13%
Gases
5%
Germanium
16%
Grain Size
7%
Graphene
6%
Growth
25%
Heating
5%
High Speed
8%
High Temperature
8%
Images
7%
Implantation
8%
Increasing
6%
Insulators
16%
Ion
8%
Ion Implantation
13%
Laser
94%
Laser Ablation
17%
Laser Annealing
63%
Laser Beams
6%
Liquids
14%
Luminescence
7%
Magnitude
5%
Melting Point
6%
Microcrystals
6%
Microstructure
8%
Mobility
13%
Nanorod
5%
Nitrogen
8%
Optical Device
7%
Optical Properties
5%
Optical Vortex
16%
Oxide
8%
Parameter
5%
Particle
22%
Permittivity
10%
Pressure
8%
Pulsed Laser
50%
Pulsed Laser Deposition
9%
Pulses
34%
Quartz
7%
Ratios
19%
Region
14%
Room Temperature
10%
Semiconductor
10%
Silicon
6%
Silicon Carbide
7%
Simulation
8%
Solid Phase
8%
Solid State
8%
Solubility
5%
Substrates
37%
Targets
9%
Temperature
26%
Thin Films
23%
Transistor
7%
Ultraviolet Laser
8%
Utilization
13%
Value
6%
Water
13%
Whispering Gallery Modes
7%
Width
6%
Zinc
5%
ZnO
20%
Material Science
Air
9%
Amorphous Material
24%
Annealing
15%
Buffer Layer
9%
Carrier Concentration
21%
Carrier Mobility
10%
Characterization
5%
Coating
14%
Cone Structure
7%
Contact Resistance
5%
Crystal
22%
Crystalline Material
6%
Crystallization
52%
Defect
13%
Devices
32%
Doping (Additives)
36%
Electronics
9%
Flexible Substrate
8%
Gallium Nitride
7%
Grain Growth
5%
Impurity
6%
Irradiation
22%
Laser
66%
Laser Pulse
9%
Liquid
7%
Liquid Films
62%
Material
7%
Microsphere
18%
Nanoparticle
13%
Optical Device
7%
Oxide
6%
Oxygen Vacancy
5%
Pulsed Laser Deposition
8%
Quartz
14%
Semiconductor Material
11%
Solid
8%
Solution
33%
Surface
26%
Surface Morphology
5%
Temperature
13%
Thin Films
43%
Thin-Film Transistor
56%
Zinc Oxide
11%
Engineering
Acid Solution
13%
Activation
20%
Aluminum
10%
Annealing
13%
Annealing Process
8%
Applications
6%
Buffer Layer
6%
Carrier Concentration
10%
Characteristics
20%
Coating
14%
Current Drive
6%
Defects
13%
Dopant Activation
13%
Dopants
15%
Excimer Laser
51%
Fabrication
25%
Generators
7%
Germanium
7%
Heating
5%
High Concentration
8%
High Degree
6%
High Temperature
7%
Ideality Factor
5%
Implantation
10%
Implanted Sample
5%
Laser Beam
5%
Laser Energy
6%
Laser Fluence
15%
Laser Irradiation
68%
Laser Light
5%
Lithography
5%
Low Resistance
5%
Low-Temperature
19%
Lower Temperature
5%
Measurement
7%
Nanosecond
5%
Pn Junction
17%
Polysilicon
18%
Pulsed Laser
8%
Radiation Effect
19%
Recrystallization
5%
Room Temperature
6%
Si Wafer
7%
Silicon
5%
Spherical Particle
7%
Stability
5%
Substrates
29%
Surface Morphology
5%
Surfaces
34%
Thermal Annealing
15%
Thin Films
31%
Thin-Film Transistor
33%
Water
6%
Zinc Oxide
7%