研究成果 1994 2020

1994
9 引用 (Scopus)
Aluminum Oxide
particulates
Alumina
aluminum oxides
ceramics
5 引用 (Scopus)

Fabrication and Microstructure of Al2O3–SiC–YAG Hybrid Composites Prepared by Particulate Dispersion

Jang, BK. K. & Kishi, T., 5 1994, : : Journal of the American Ceramic Society. 77, 5, p. 1375-1376 2 p.

研究成果: ジャーナルへの寄稿記事

microstructure
grain size
Fabrication
Microstructure
Composite materials
1998
5 引用 (Scopus)

Effect of nano-sized SiC and micro-sized YAG dispersion on the microstructure of alumina

Jang, B. K. & Kishi, T., 1 1 1998, : : Journal of the Ceramic Society of Japan. 106, 2, p. 138-143 6 p.

研究成果: ジャーナルへの寄稿記事

Aluminum Oxide
Hot pressing
yttrium-aluminum garnet
Grain boundaries
Alumina
14 引用 (Scopus)

Fabrication and microstructure of Al2O3 matrix composites by in-situ reaction in the Al2O3-La2O3 system

Jang, B. K. & Kishi, T., 8 1998, : : Journal of the Ceramic Society of Japan. 106, 8, p. 739-743 5 p.

研究成果: ジャーナルへの寄稿記事

Hot pressing
hot pressing
Aluminum Oxide
Fabrication
microstructure
2001
2 引用 (Scopus)

Hot-corrosion behavior of silicon nitride-bonded silicon carbide

Woo, S. K., Han, I. S., Ri, G. G., Park, S. C., Cho, K. & Jang, B. K., 1 1 2001, : : Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan. 109, 1265, p. 23-28 6 p.

研究成果: ジャーナルへの寄稿記事

hot corrosion
thermal shock
Thermal shock
Silicon nitride
silicon nitrides
2003
4 引用 (Scopus)
Electron cyclotron resonance
electron cyclotron resonance
Sputtering
sputtering
Plasmas
1 引用 (Scopus)
Krypton
Electron cyclotron resonance
Growth kinetics
oxygen plasma
krypton
2004

Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Wang, D., Ninomiya, M., Nakamae, M. & Nakashima, H., 12 1 2004, p. 2148-2150. 3 p.

研究成果: 会議への寄与タイプ論文

Interface states
Capacitance
Metals
Deep level transient spectroscopy
Fabrication
2 引用 (Scopus)

Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation

Zhao, L., Luu, N. H., Wang, D., Sugimoto, Y., Ikeda, K. I., Nakashima, H. & Nakashima, H., 1 15 2004, : : Japanese Journal of Applied Physics, Part 2: Letters. 43, 1 A/B

研究成果: ジャーナルへの寄稿記事

Electron cyclotron resonance
Growth temperature
electron cyclotron resonance
Silicon nitride
silicon nitrides
13 引用 (Scopus)

Method for detecting defects in silicon-on-insulator using capacitance transient spectroscopy

Nakashima, H., Wang, D., Noguchi, T., Itani, K., Wang, J. & Zhao, L., 1 1 2004, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 5 A, p. 2402-2408 7 p.

研究成果: ジャーナルへの寄稿記事

Deep level transient spectroscopy
Interface states
capacitance
insulators
Silicon
2005
13 引用 (Scopus)

Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements

Wang, D., Ninomiya, M., Nakamae, M. & Nakashima, H., 3 21 2005, : : Applied Physics Letters. 86, 12, p. 1-3 3 p., 122111.

研究成果: ジャーナルへの寄稿記事

capacitance
wafers
minority carriers
metal oxide semiconductors
life (durability)
3 引用 (Scopus)
Deep level transient spectroscopy
Interface states
minority carriers
Capacitance
capacitance
6 引用 (Scopus)

Fe gettering for high-efficiency solar cell fabrication

Terakawa, T., Wang, D. & Nakashima, H., 6 2005, : : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 44, 6 A, p. 4060-4061 2 p.

研究成果: ジャーナルへの寄稿記事

Deep level transient spectroscopy
Solar cells
solar cells
Annealing
Fabrication
30 引用 (Scopus)

Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

Wang, D., Nakashima, H., Matsumoto, K. & Nakamae, M., 12 27 2005, : : Applied Physics Letters. 87, 25, p. 1-3 3 p., 251928.

研究成果: ジャーナルへの寄稿記事

insulators
wafers
photoluminescence
defects
12 引用 (Scopus)
Electron cyclotron resonance
Gate dielectrics
electron cyclotron resonance
zirconium oxides
Zirconia
2006
5 引用 (Scopus)
Dielectric films
Gate dielectrics
Annealing
Plasmas
Oxidation
2 引用 (Scopus)

Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

Wang, D., Ueda, A., Takada, H. & Nakashima, H., 4 1 2006, : : Physica B: Condensed Matter. 376-377, 1, p. 411-415 5 p.

研究成果: ジャーナルへの寄稿Conference article

Capacitance measurement
metal oxide semiconductors
capacitors
Capacitors
capacitance
1 引用 (Scopus)

Fe gettering by p+ layer in bifacial Si solar cell fabrication

Terakawa, T., Wang, D. & Nakashima, H., 4 1 2006, : : Physica B: Condensed Matter. 376-377, 1, p. 231-235 5 p.

研究成果: ジャーナルへの寄稿Conference article

Solar cells
Contamination
solar cells
contamination
Fabrication
1 引用 (Scopus)
Photoluminescence
insulators
Transmission electron microscopy
photoluminescence
Fabrication
1 引用 (Scopus)

Photoluminescence characterization of strained Si-SiGe-on-insulator wafers

Wang, D., Matsumoto, K., Nakamae, M. & Nakashima, H., 4 25 2006, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 4 B, p. 3012-3016 5 p.

研究成果: ジャーナルへの寄稿記事

Photoluminescence
insulators
wafers
photoluminescence
Lasers
10 引用 (Scopus)

Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process

Wang, D., Li, S., Nakashima, H., Ikeda, K. I., Nakashima, H., Matsumoto, K. & Nakamae, M., 8 4 2006, : : Applied Physics Letters. 89, 4, 041916.

研究成果: ジャーナルへの寄稿記事

insulators
wafers
photoluminescence
fabrication
evaluation
12 引用 (Scopus)
Solar cells
Contamination
solar cells
contamination
Fabrication
9 引用 (Scopus)

Structural and electrical evaluation for strained Si/SiGe on insulator

Wang, D., Ii, S., Ikeda, K. I., Nakashima, H., Ninomiya, M., Nakamae, M. & Nakashima, H., 6 5 2006, : : Thin Solid Films. 508, 1-2, p. 107-111 5 p.

研究成果: ジャーナルへの寄稿記事

Oxides
insulators
Deep level transient spectroscopy
oxides
evaluation
2007
24 引用 (Scopus)

Effective work function modulation of TaN metal gate on Hf O2 after postmetallization annealing

Sugimoto, Y., Kajiwara, M., Yamamoto, K., Suehiro, Y., Wang, D. & Nakashima, H., 9 21 2007, : : Applied Physics Letters. 91, 11, 112105.

研究成果: ジャーナルへの寄稿記事

modulation
annealing
metals
x ray spectroscopy
photoelectron spectroscopy
7 引用 (Scopus)
Wet etching
Structural properties
Masks
Electric properties
masks
12 引用 (Scopus)

Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition

Wang, D., Nakashima, H., Morioka, J. & Kitamura, T., 12 20 2007, : : Applied Physics Letters. 91, 24, 241918.

研究成果: ジャーナルへの寄稿記事

membranes
evaluation
etching
mesas
low pressure

Photoluminescence evaluation of defects generated during temperature ramp-up process of SiGe-on-insulator virtual substrate fabrication

Wang, D., Ii, S., Ikeda, K. I., Nakashima, H. & Nakashima, H., 8 2 2007, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 2193-2195 3 p. 4098665

研究成果: 著書/レポートタイプへの貢献会議での発言

Photoluminescence
Fabrication
Defects
Substrates
Annealing
2008
9 引用 (Scopus)

Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal

Sugimoto, Y., Kajiwara, M., Yamamoto, K., Suehiro, Y., Wang, D. & Nakashima, H., 11 3 2008, : : Thin Solid Films. 517, 1, p. 204-206 3 p.

研究成果: ジャーナルへの寄稿記事

Metallizing
Wet etching
Oxides
Structural properties
Electric properties
3 引用 (Scopus)
Gate dielectrics
Oxides
Annealing
Plasmas
Oxidation
1 引用 (Scopus)

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure

Nakashima, H., Sugimoto, Y., Suehiro, Y., Yamamoto, K., Kajiwara, M., Hirayama, K. & Wang, D., 12 1 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 780-783 4 p. 4734660. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

研究成果: 著書/レポートタイプへの貢献会議での発言

Gate dielectrics
Oxides
Annealing
Plasmas
Fabrication
28 引用 (Scopus)

Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator

Yang, H., Wang, D., Nakashima, H., Gao, H., Hirayama, K., Ikeda, K. I., Hata, S. & Nakashima, H., 9 1 2008, : : Applied Physics Letters. 93, 7, 072104.

研究成果: ジャーナルへの寄稿記事

hole mobility
passivity
insulators
metal oxide semiconductors
field effect transistors

Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation

Wang, D., Yang, H., Morioka, J., Kitamura, T. & Nakashima, H., 12 1 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 684-687 4 p. 4734646. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

研究成果: 著書/レポートタイプへの貢献会議での発言

Laser excitation
ultraviolet lasers
membranes
Membranes
evaluation
2 引用 (Scopus)

Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence

Wang, D., Nakashima, H., Tanaka, M., Sadoh, T., Miyao, M., Morioka, J. & Kitamura, T., 11 3 2008, : : Thin Solid Films. 517, 1, p. 31-33 3 p.

研究成果: ジャーナルへの寄稿記事

Raman spectroscopy
Photoluminescence
etching
Single crystals
photoluminescence
2009
22 引用 (Scopus)
condensation
insulators
metal oxide semiconductors
Hall effect
field effect transistors
1 引用 (Scopus)

Optical and electrical characterizations of defects in SiGe-On-InsuIator

Nakashima, H., Wang, D. & Yang, H., 12 1 2009, ECS Transactions - ULSI Process Integration 6. 7 版 巻 25. p. 99-114 16 p.

研究成果: 著書/レポートタイプへの貢献会議での発言

Defects
MOSFET devices
Condensation
Annealing
Hole concentration
4 引用 (Scopus)
Condensation
Photoluminescence
condensation
insulators
photoluminescence
2010

325 nm-laser-excited micro-photoluminescence for strained Si films

Wang, D., Yang, H., Kitamura, T. & Nakashima, H., 2 26 2010, : : Thin Solid Films. 518, 9, p. 2470-2473 4 p.

研究成果: ジャーナルへの寄稿記事

Photoluminescence
photoluminescence
Lasers
lasers
Laser excitation

Defect characterization and control for SiGe-on-insulator

Wang, D., Yang, H. & Nakashima, H., 12 1 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 1525-1528 4 p. 5667501. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: 著書/レポートタイプへの貢献会議での発言

Defects
Hole concentration
Condensation
Annealing
Oxidation
10 引用 (Scopus)

Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

Yang, H., Wang, D., Nakashima, H., Hirayama, K., Kojima, S. & Ikeura, S., 2 26 2010, : : Thin Solid Films. 518, 9, p. 2342-2345 4 p.

研究成果: ジャーナルへの寄稿記事

Personal digital assistants
insulators
Annealing
Defects
annealing
8 引用 (Scopus)

Dispersion and shortening of multi-walled carbon nanotubes by size modification

Jang, B. K. & Sakka, Y., 1 1 2010, : : Materials Transactions. 51, 1, p. 192-195 4 p.

研究成果: ジャーナルへの寄稿記事

Carbon Nanotubes
Carbon nanotubes
carbon nanotubes
Suspensions
shear

Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers

Hirayama, K., Kira, W., Yoshino, K., Yang, H., Wang, D. & Nakashima, H., 2 26 2010, : : Thin Solid Films. 518, 9, p. 2505-2508 4 p.

研究成果: ジャーナルへの寄稿記事

Gate dielectrics
interlayers
Annealing
annealing
Electron cyclotron resonance

Hole-mobility enhancement in ultrathin strained Si0.5Ge 0.5-on-insulator fabricated by Ge condensation technique

Yang, H., Wang, D. & Nakashima, H., 12 1 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 905-907 3 p. 5667472. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: 著書/レポートタイプへの貢献会議での発言

Hole mobility
Condensation
2 引用 (Scopus)
thick films
excitons
photoluminescence
penetration
lasers
Electron diffraction
finite element method
electron diffraction
membranes
Membranes
1 引用 (Scopus)

Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition

Gao, H., Ikeda, K. I., Hata, S., Nakashima, H., Wang, D. & Nakashima, H., 9 1 2010, : : Materials Science and Engineering A. 527, 24-25, p. 6633-6637 5 p.

研究成果: ジャーナルへの寄稿記事

strain distribution
membranes
Membranes
microstructure
Microstructure
3 引用 (Scopus)

Passivation of electrically active defects in Ge-Rich SiGe-on-insulator by Al2O3 deposition and subsequent post-deposition annealing

Yang, H., Iyota, M., Ikeura, S., Wang, D. & Nakashima, H., 7 1 2010, : : Applied Physics Express. 3, 7, 071302.

研究成果: ジャーナルへの寄稿記事

Passivation
passivity
insulators
Annealing
Defects
2 引用 (Scopus)

Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy

Gao, H., Ikeda, K. I., Hata, S., Nakashima, H., Wang, D. & Nakashima, H., 9 30 2010, : : Thin Solid Films. 518, 23, p. 6787-6791 5 p.

研究成果: ジャーナルへの寄稿記事

strain distribution
membranes
Transmission electron microscopy
Membranes
transmission electron microscopy
2 引用 (Scopus)

The carbon black effect on crack formation during pyrolysis step in liquid silicon infiltration process for Cf/C-SiC composites

Kim, S. Y., Woo, S. K., Han, I. S., Seo, D. W., Jang, B. K. & Sakka, Y., 11 2010, : : Journal of the Ceramic Society of Japan. 118, 1383, p. 1075-1078 4 p.

研究成果: ジャーナルへの寄稿記事

Soot
crack initiation
Silicon
infiltration
Carbon black
2011

Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., 7 1 2011, China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 版 p. 1117-1122 6 p. (ECS Transactions; 巻数 34, 番号 1).

研究成果: 著書/レポートタイプへの貢献会議での発言

Photoluminescence
Strain relaxation
Defects
Annealing
Electron cyclotron resonance

Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., 11 22 2011, : : Journal of the Electrochemical Society. 158, 12, p. H1221-H1224

研究成果: ジャーナルへの寄稿記事

Strain relaxation
Photoluminescence
insulators
photoluminescence
Defects