研究成果 1994 2020

325 nm-laser-excited micro-photoluminescence for strained Si films

Wang, D., Yang, H., Kitamura, T. & Nakashima, H., 2 26 2010, : : Thin Solid Films. 518, 9, p. 2470-2473 4 p.

研究成果: ジャーナルへの寄稿記事

Photoluminescence
photoluminescence
Lasers
lasers
Laser excitation
16 引用 (Scopus)
MIS (semiconductors)
passivity
capacitors
spectroscopy
traps

Border-trap characterization for Ge gate stacks using deep-level transient spectroscopy

Nakashima, H., Wen, W. C., Yamamoto, K. & Wang, D., 1 1 2019, Semiconductor Process Integration 11. Murota, J., Claeys, C., Iwai, H., Tao, M., Deleonibus, S., Mai, A., Shiojima, K. & Cao, Y. (版). 4 版 Electrochemical Society Inc., p. 3-10 8 p. (ECS Transactions; 巻数 92, 番号 4).

研究成果: 著書/レポートタイプへの貢献会議での発言

Deep level transient spectroscopy
Capacitors
Valence bands
Conduction bands
Metals
3 引用 (Scopus)

Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy

Wen, W. C., Yamamoto, K., Wang, D. & Nakashima, H., 11 28 2018, : : Journal of Applied Physics. 124, 20, 205303.

研究成果: ジャーナルへの寄稿記事

borders
metal oxide semiconductors
traps
capacitors
evaluation
1 引用 (Scopus)

Characteristics of bulk and coating in Gd2-xZr2+xO7+0.5x(x = 0.0, 0.5, 1.0) system for thermal barrier coatings

Kim, S. J., Lee, S. M., Oh, Y. S., Kim, H. T., Jang, B. K. & Kim, S., 11 2016, : : Journal of the Korean Ceramic Society. 53, 6, p. 652-658 7 p.

研究成果: ジャーナルへの寄稿記事

Thermal barrier coatings
Suspensions
Gadolinium
Zirconia
Coatings
15 引用 (Scopus)

Characterization of multiwalled carbon nanotube-reinforced hydroxyapatite composites consolidated by spark plasma sintering

Kim, D. Y., Han, Y. H., Lee, J. H., Kang, I. K., Jang, B. K. & Kim, S., 2014, : : BioMed Research International. 2014, 768254.

研究成果: ジャーナルへの寄稿記事

Carbon Nanotubes
Spark plasma sintering
Multiwalled carbon nanotubes (MWCN)
Durapatite
Composite materials
9 引用 (Scopus)
Aluminum Oxide
particulates
Alumina
aluminum oxides
ceramics
4 引用 (Scopus)

Damage and wear resistance of Al2O3-CNT nanocomposites fabricated by spark plasma sintering

Lee, K. S., Jang, B. K. & Sakka, Y., 10 2013, : : Journal of the Ceramic Society of Japan. 121, 1418, p. 867-872 6 p.

研究成果: ジャーナルへの寄稿記事

Spark plasma sintering
sparks
wear resistance
Wear resistance
Nanocomposites
1 引用 (Scopus)

Damage and wear resistance of Al2O3SiC microcomposites with hard and elastic properties

Elyas, H., Kim, T. W., Jang, B. K. & Lee, K. S., 1 2018, : : Journal of the Ceramic Society of Japan. 126, 1, p. 21-26 6 p.

研究成果: ジャーナルへの寄稿記事

wear resistance
Wear resistance
elastic properties
damage
composite materials

Defect characterization and control for SiGe-on-insulator

Wang, D., Yang, H. & Nakashima, H., 12 1 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 1525-1528 4 p. 5667501. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: 著書/レポートタイプへの貢献会議での発言

Defects
Hole concentration
Condensation
Annealing
Oxidation
10 引用 (Scopus)

Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

Yang, H., Wang, D., Nakashima, H., Hirayama, K., Kojima, S. & Ikeura, S., 2 26 2010, : : Thin Solid Films. 518, 9, p. 2342-2345 4 p.

研究成果: ジャーナルへの寄稿記事

Personal digital assistants
insulators
Annealing
Defects
annealing

Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., 7 1 2011, China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 版 p. 1117-1122 6 p. (ECS Transactions; 巻数 34, 番号 1).

研究成果: 著書/レポートタイプへの貢献会議での発言

Photoluminescence
Strain relaxation
Defects
Annealing
Electron cyclotron resonance

Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., 11 22 2011, : : Journal of the Electrochemical Society. 158, 12, p. H1221-H1224

研究成果: ジャーナルへの寄稿記事

Strain relaxation
Photoluminescence
insulators
photoluminescence
Defects
9 引用 (Scopus)

Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal

Sugimoto, Y., Kajiwara, M., Yamamoto, K., Suehiro, Y., Wang, D. & Nakashima, H., 11 3 2008, : : Thin Solid Films. 517, 1, p. 204-206 3 p.

研究成果: ジャーナルへの寄稿記事

Metallizing
Wet etching
Oxides
Structural properties
Electric properties

Development of metal source/drain Ge-CMOS using TiN/Ge and HfGe/Ge contacts

Nakashima, H., Yamamoto, K. & Wang, D., 1 1 2013, : : ECS Transactions. 58, 9, p. 167-178 12 p.

研究成果: ジャーナルへの寄稿記事

Fabrication
Carrier mobility
Fermi level
Metals
Electrons
8 引用 (Scopus)

Dispersion and shortening of multi-walled carbon nanotubes by size modification

Jang, B. K. & Sakka, Y., 1 1 2010, : : Materials Transactions. 51, 1, p. 192-195 4 p.

研究成果: ジャーナルへの寄稿記事

Carbon Nanotubes
Carbon nanotubes
carbon nanotubes
Suspensions
shear
2 引用 (Scopus)

Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing

Yang, H., Iyota, M., Ikeura, S., Wang, D. & Nakashima, H., 6 1 2011, : : Solid-State Electronics. 60, 1, p. 128-133 6 p.

研究成果: ジャーナルへの寄稿記事

Passivation
passivity
insulators
Annealing
Defects
24 引用 (Scopus)

Effective work function modulation of TaN metal gate on Hf O2 after postmetallization annealing

Sugimoto, Y., Kajiwara, M., Yamamoto, K., Suehiro, Y., Wang, D. & Nakashima, H., 9 21 2007, : : Applied Physics Letters. 91, 11, 112105.

研究成果: ジャーナルへの寄稿記事

modulation
annealing
metals
x ray spectroscopy
photoelectron spectroscopy

Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator

Yang, H., Iyota, M., Ikeura, S., Wang, D. & Nakashima, H., 3 23 2011, Technology Evolution for Silicon Nano-Electronics. p. 79-84 6 p. (Key Engineering Materials; 巻数 470).

研究成果: 著書/レポートタイプへの貢献会議での発言

Passivation
Annealing
Defects
Personal digital assistants
Hole concentration
2 引用 (Scopus)

Effect of carbon content on the tribological behavior of TiCxN1-x films prepared by arc-vapor deposition

Nguyen, X. H., Kim, I. K., Jang, B. K. & Oh, Y. S., 12 2013, : : Journal of the Ceramic Society of Japan. 121, 1420, p. 961-967 7 p.

研究成果: ジャーナルへの寄稿記事

Vapor deposition
Carbon
arcs
vapor deposition
Carbon nitride
4 引用 (Scopus)
Electron cyclotron resonance
electron cyclotron resonance
Sputtering
sputtering
Plasmas
5 引用 (Scopus)

Effect of nano-sized SiC and micro-sized YAG dispersion on the microstructure of alumina

Jang, B. K. & Kishi, T., 1 1 1998, : : Journal of the Ceramic Society of Japan. 106, 2, p. 138-143 6 p.

研究成果: ジャーナルへの寄稿記事

Aluminum Oxide
Hot pressing
yttrium-aluminum garnet
Grain boundaries
Alumina
1 引用 (Scopus)

Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes

Maekura, T., Tanaka, K., Motoyama, C., Yoneda, R., Yamamoto, K., Nakashima, H. & Wang, D., 8 30 2017, : : Semiconductor Science and Technology. 32, 10, 104001.

研究成果: ジャーナルへの寄稿記事

Electroluminescence
electroluminescence
Diodes
Energy gap
Metals
2 引用 (Scopus)

Effect of plasma pretreatment on thermal durability of thermal barrier coatings in cyclic thermal exposure

Myoung, S. W., Lu, Z., Jung, Y. G., Jang, B. K., Yoo, Y. S., Seo, S. M., Choi, B. G. & Jo, C. Y., 2014, : : Advances in Materials Science and Engineering. 2014, 593891.

研究成果: ジャーナルへの寄稿記事

Thermal barrier coatings
Durability
Plasmas
Air
Hot Temperature
4 引用 (Scopus)

Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

Kasahara, K., Higashi, H., Nakano, M., Nagatomi, Y., Yamamoto, K., Nakashima, H. & Hamaya, K., 11 1 2017, : : Materials Science in Semiconductor Processing. 70, p. 68-72 5 p.

研究成果: ジャーナルへの寄稿記事

Germanium
Hole mobility
hole mobility
germanium
Electric properties
3 引用 (Scopus)
Gate dielectrics
Oxides
Annealing
Plasmas
Oxidation
7 引用 (Scopus)
Wet etching
Structural properties
Masks
Electric properties
masks
5 引用 (Scopus)
Dielectric films
Gate dielectrics
Annealing
Plasmas
Oxidation

Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers

Hirayama, K., Kira, W., Yoshino, K., Yang, H., Wang, D. & Nakashima, H., 2 26 2010, : : Thin Solid Films. 518, 9, p. 2505-2508 4 p.

研究成果: ジャーナルへの寄稿記事

Gate dielectrics
interlayers
Annealing
annealing
Electron cyclotron resonance
13 引用 (Scopus)

Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements

Wang, D., Ninomiya, M., Nakamae, M. & Nakashima, H., 3 21 2005, : : Applied Physics Letters. 86, 12, p. 1-3 3 p., 122111.

研究成果: ジャーナルへの寄稿記事

capacitance
wafers
minority carriers
metal oxide semiconductors
life (durability)
2 引用 (Scopus)

Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

Wang, D., Ueda, A., Takada, H. & Nakashima, H., 4 1 2006, : : Physica B: Condensed Matter. 376-377, 1, p. 411-415 5 p.

研究成果: ジャーナルへの寄稿Conference article

Capacitance measurement
metal oxide semiconductors
capacitors
Capacitors
capacitance
4 引用 (Scopus)

Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

Kanashima, T., Yamashiro, R., Zenitaka, M., Yamamoto, K., Wang, D., Tadano, J., Yamada, S., Nohira, H., Nakashima, H. & Hamaya, K., 11 1 2017, : : Materials Science in Semiconductor Processing. 70, p. 260-264 5 p.

研究成果: ジャーナルへの寄稿記事

Lutetium
Germanium
lutetium
germanium
Electric properties
7 引用 (Scopus)

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °c

Higashi, H., Kudo, K., Yamamoto, K., Yamada, S., Kanashima, T., Tsunoda, I., Nakashima, H. & Hamaya, K., 6 7 2018, : : Journal of Applied Physics. 123, 21, 215704.

研究成果: ジャーナルへの寄稿記事

electrical properties
crystallization
transistors
contamination
leakage

Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Wang, D., Ninomiya, M., Nakamae, M. & Nakashima, H., 12 1 2004, p. 2148-2150. 3 p.

研究成果: 会議への寄与タイプ論文

Interface states
Capacitance
Metals
Deep level transient spectroscopy
Fabrication
3 引用 (Scopus)
Deep level transient spectroscopy
Interface states
minority carriers
Capacitance
capacitance
22 引用 (Scopus)
condensation
insulators
metal oxide semiconductors
Hall effect
field effect transistors

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate

Maekrua, T., Goto, T., Nakae, K., Yamamoto, K., Nakashima, H. & Wang, D., 1 1 2019, : : Japanese Journal of Applied Physics. 58, SB, SBBE05.

研究成果: ジャーナルへの寄稿記事

公開
Electroluminescence
Diodes
diodes
insulators
Fabrication
14 引用 (Scopus)

Fabrication and microstructure of Al2O3 matrix composites by in-situ reaction in the Al2O3-La2O3 system

Jang, B. K. & Kishi, T., 8 1998, : : Journal of the Ceramic Society of Japan. 106, 8, p. 739-743 5 p.

研究成果: ジャーナルへの寄稿記事

Hot pressing
hot pressing
Aluminum Oxide
Fabrication
microstructure
5 引用 (Scopus)

Fabrication and Microstructure of Al2O3–SiC–YAG Hybrid Composites Prepared by Particulate Dispersion

Jang, BK. K. & Kishi, T., 5 1994, : : Journal of the American Ceramic Society. 77, 5, p. 1375-1376 2 p.

研究成果: ジャーナルへの寄稿記事

microstructure
grain size
Fabrication
Microstructure
Composite materials
2 引用 (Scopus)
Field effect transistors
field effect transistors
conduction
Fabrication
space transportation system

Fabrication of EBC System with Oxide Eutectic Structure

Ueno, S., Seya, K. & Jang, B. K., 5 31 2016, Ceramic Transactions. Wiley-Blackwell, 巻 256. p. 65-72 8 p.

研究成果: 著書/レポートタイプへの貢献

Silicon carbide
Oxides
Eutectics
Carbon
Molten materials
23 引用 (Scopus)

Fabrication of Ge metal-oxide-semiconductor capacitors with high-quality interface by ultrathin SiO2/GeO2 bilayer passivation and postmetallization annealing effect of al

Hirayama, K., Ueno, R., Iwamura, Y., Yoshino, K., Wang, D., Yang, H. & Nakashima, H., 4 1 2011, : : Japanese Journal of Applied Physics. 50, 4 PART 2, 04DA10.

研究成果: ジャーナルへの寄稿記事

Passivation
metal oxide semiconductors
passivity
capacitors
Capacitors
19 引用 (Scopus)

Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

Hirayama, K., Yoshino, K., Ueno, R., Iwamura, Y., Yang, H., Wang, D. & Nakashima, H., 6 1 2011, : : Solid-State Electronics. 60, 1, p. 122-127 6 p.

研究成果: ジャーナルへの寄稿記事

MOS capacitors
Passivation
Magnetron sputtering
passivity
capacitors
1 引用 (Scopus)

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure

Nakashima, H., Sugimoto, Y., Suehiro, Y., Yamamoto, K., Kajiwara, M., Hirayama, K. & Wang, D., 12 1 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 780-783 4 p. 4734660. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

研究成果: 著書/レポートタイプへの貢献会議での発言

Gate dielectrics
Oxides
Annealing
Plasmas
Fabrication

Fabrication of metal-nitride/Si contacts with low electron barrier height

Yamamoto, K., Asakawa, K., Wang, D. & Nakashima, H., 1 1 2013, : : ECS Transactions. 58, 9, p. 53-59 7 p.

研究成果: ジャーナルへの寄稿記事

Nitrides
Fabrication
Electrons
Metals
Sputtering
21 引用 (Scopus)

Fabrication of TiN/Ge contact with extremely low electron barrier height

Yamamoto, K., Harada, K., Yang, H., Wang, D. & Nakashima, H., 7 1 2012, : : Japanese journal of applied physics. 51, 7 PART 1, 070208.

研究成果: ジャーナルへの寄稿記事

Leakage currents
Fabrication
fabrication
Electrons
Surface states
1 引用 (Scopus)

Fe gettering by p+ layer in bifacial Si solar cell fabrication

Terakawa, T., Wang, D. & Nakashima, H., 4 1 2006, : : Physica B: Condensed Matter. 376-377, 1, p. 231-235 5 p.

研究成果: ジャーナルへの寄稿Conference article

Solar cells
Contamination
solar cells
contamination
Fabrication
6 引用 (Scopus)

Fe gettering for high-efficiency solar cell fabrication

Terakawa, T., Wang, D. & Nakashima, H., 6 2005, : : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 44, 6 A, p. 4060-4061 2 p.

研究成果: ジャーナルへの寄稿記事

Deep level transient spectroscopy
Solar cells
solar cells
Annealing
Fabrication
3 引用 (Scopus)

Gate stack and source/drain junction formations for high-mobility Ge MOSFETs

Nakashima, H., Yamamoto, K., Yang, H. & Wang, D., 12 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 版 巻 50. p. 205-216 12 p.

研究成果: 著書/レポートタイプへの貢献会議での発言

Thermal diffusion
Carrier mobility
Passivation
Ion implantation
Fabrication
公開
Field effect transistors
field effect transistors
insulators
space transportation system
Metals