研究成果 1980 2020

フィルター
記事
1980
4 引用 (Scopus)

Carrier compensation in O+ implanted n-type GaAs

Asano, T. & Hemment, P. L. F., 1 1 1980, : : Solid-State Electronics. 23, 10, p. 1089-1090 2 p.

研究成果: ジャーナルへの寄稿記事

electrical measurement
oxygen atoms
Annealing
Oxygen
dosage
1981
18 引用 (Scopus)

Formation of thick, thermally-stable high-resistivity-layers in GaAs by oxygen ion implantation

Asano, T., Atanassov, R. D., Ishiwara, H. & Furukawa, S., 1 1 1981, : : Japanese Journal of Applied Physics. 20, 5, p. 901-907 7 p.

研究成果: ジャーナルへの寄稿記事

oxygen ions
Ion implantation
ion implantation
implantation
electrical resistivity
46 引用 (Scopus)

Single crystalline silicide formation

Saitoh, S., Ishiwara, H., Asano, T. & Furukawa, S., 9 1981, : : Japanese Journal of Applied Physics. 20, 9, p. 1649-1656 8 p.

研究成果: ジャーナルへの寄稿記事

Crystalline materials
backscattering
Transmission electron microscopy
Thin films
transmission electron microscopy
1982
19 引用 (Scopus)

Epitaxial growth of ge films onto caf 2/si structures

Asano, T. & Ishiwara, H., 10 1982, : : Japanese Journal of Applied Physics. 21, 10, p. L630-L632

研究成果: ジャーナルへの寄稿記事

Epitaxial growth
Crystalline materials
Vacuum evaporation
Substrates
surface roughness
10 引用 (Scopus)

Formation of an epitaxial si/insulator/si structure by vacuum deposition of caf2 and si

Asano, T. & Ishiwara, H., 1 1 1982, : : Japanese Journal of Applied Physics. 21, 1 p.

研究成果: ジャーナルへの寄稿記事

Vacuum deposition
vacuum deposition
insulators
Rutherford backscattering spectroscopy
Substrates
1983
84 引用 (Scopus)

HETEROEPITAXIAL GROWTH OF GROUP-IIa-FLUORIDE FILMS ON Si SUBSTRATES.

Asano, T., Ishiwara, H. & Kaifu, N., 1 1 1983, : : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 22, 10, p. 1474-1481 8 p.

研究成果: ジャーナルへの寄稿記事

Epitaxial growth
Substrates
Crystallites
Crystal orientation
crystallites
2 引用 (Scopus)

Radiation damage in epitaxial CaF2films on Si substrates by Ar+ion implantation

Ishiwara, H., Orihara, K. & Asano, T., 7 1983, : : Japanese Journal of Applied Physics. 22, 7, p. L458-L460

研究成果: ジャーナルへの寄稿記事

Radiation damage
Rutherford backscattering spectroscopy
Ion bombardment
radiation damage
Ion implantation
1984
55 引用 (Scopus)

Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature

Asano, T. & Ishiwara, H., 12 1 1984, : : Journal of Applied Physics. 55, 10, p. 3566-3570 5 p.

研究成果: ジャーナルへの寄稿記事

room temperature
surface reactions
thick films
vacuum
ions
14 引用 (Scopus)

Epitaxial relations in lattice-matched (ca, sr)f2 films grown on gaas{111} and ge(111) substrates

Ishiwara, H., Tsutsui, K., Asano, T. & Furukawa, S., 10 1984, : : Japanese Journal of Applied Physics. 23, 10, p. L803-L805

研究成果: ジャーナルへの寄稿記事

Substrates
Epitaxial films
Backscattering
Crystal orientation
Lattice constants

Ion channeling studies of preferentially (111) oriented BaF2 films on amorphous SiO2 substrates

Ishiwara, H., Kaifu, N. & Asano, T., 12 1 1984, : : Applied Physics Letters. 45, 11, p. 1184-1186 3 p.

研究成果: ジャーナルへの寄稿記事

ions
transmission electron microscopy
vacuum deposition
crystallites
x ray diffraction
1985
6 引用 (Scopus)

Control of crystal orientations in lattice-mismatched srf2and (Ca, sr)f2films on si substrates by intermediate caf2films

Ishiwara, H., Kanemaru, S., Asano, T. & Furukawa, S., 1 1985, : : Japanese Journal of Applied Physics. 24, 1, p. 56-58 3 p.

研究成果: ジャーナルへの寄稿記事

Crystallites
Crystal lattices
Crystal orientation
crystallites
Epitaxial films
28 引用 (Scopus)

Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates

Tsutsui, K., Ishiwara, H., Asano, T. & Furukawa, S., 12 1 1985, : : Applied Physics Letters. 46, 12, p. 1131-1133 3 p.

研究成果: ジャーナルへの寄稿記事

fluorides
transmission electron microscopy
ions
1986
30 引用 (Scopus)

Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs

Asano, T., Ishiwara, H., Lee, H. C., Tsutsui, K. & Furukawa, S., 2 1986, : : Japanese Journal of Applied Physics. 25, 2 A, p. L139-L141

研究成果: ジャーナルへの寄稿記事

Epitaxial growth
insulators
Substrates
Epitaxial layers
Growth temperature
9 引用 (Scopus)

Optimization of the growth conditions of heteroepitaxial GaAs films on caf2/si structures

Lee, H. C., Asano, T., Ishiwara, H. & Furukawa, S., 1 1 1986, : : Japanese Journal of Applied Physics. 25, 7, p. L595-L597

研究成果: ジャーナルへの寄稿記事

optimization
Substrates
Crystalline materials
Surface morphology
crystallinity
1987
4 引用 (Scopus)

Formation of ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films

Fukada, T., Asano, T., Frukawa, S. & Ishiwara, H., 1 1987, : : Japanese Journal of Applied Physics. 26, 1 R, p. 117-121 5 p.

研究成果: ジャーナルへの寄稿記事

Ohmic contacts
Epitaxial growth
epitaxy
solid phases
electric contacts
2 引用 (Scopus)

Growth and characterization of compositionally graded (ca, sr)f2 layers on si(111) substrates

Kanemaru, S., Ishiwara, H., Asano, T. & Furukawa, S., 6 1987, : : Japanese Journal of Applied Physics. 26, 6R, p. 848-851 4 p.

研究成果: ジャーナルへの寄稿記事

fluorides
Crucibles
Rutherford backscattering spectroscopy
Growth temperature
Substrates
11 引用 (Scopus)

MESFET’s on a GaAs-on-Insulator Structure

Tsutsui, K., Nakazawa, T., Asano, T., Ishiwara, H. & Furukawa, S., 6 1987, : : IEEE Electron Device Letters. EDL-8, 6, p. 277-279 3 p.

研究成果: ジャーナルへの寄稿記事

Wet etching
Field effect transistors
Molecular beam epitaxy
Crystalline materials
Fluorides
1988
4 引用 (Scopus)

Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces

Ando, K., Saiki, K., Sato, Y., Koma, A., Asano, T., Ishiwara, H. & Furukawa, S., 2 1988, : : Japanese Journal of Applied Physics. 27, 2A, p. L170-L172

研究成果: ジャーナルへの寄稿記事

phytotrons
Electron energy loss spectroscopy
Auger electron spectroscopy
vacuum chambers
Epitaxial growth
45 引用 (Scopus)

Electron-beam exposure(ebe) and epitaxy of gaas films on caf2/si structures

Lee, H. C., Asano, T., Ishiwara, H. & Furukawa, S., 9 1988, : : Japanese Journal of Applied Physics. 27, 9 R, p. 1616-1625 10 p.

研究成果: ジャーナルへの寄稿記事

Epitaxial growth
epitaxy
Electron beams
electron beams
temperature dependence

Electron-beam exposure heteroepitaxial growth of GaAs/CaF2/Si structures

Furukawa, S., Ishiwara, H., Asano, T. & Lee, H. C., 8 15 1988, : : Proceedings of SPIE - The International Society for Optical Engineering. 944, p. 139-145 7 p.

研究成果: ジャーナルへの寄稿記事

Epitaxy
Gallium Arsenide
Electron Beam
Epitaxial growth
epitaxy
11 引用 (Scopus)

Improvement of the interface properties of fluoride/gaas(100) structures by postgrowth annealing

Kim, K. H., Ishiwara, H., Asano, T. & Furukawa, S., 11 1988, : : Japanese Journal of Applied Physics. 27, 11 A, p. L2180-L2182

研究成果: ジャーナルへの寄稿記事

fluorides
Annealing
annealing
Capacitance measurement
Interface states
1989
7 引用 (Scopus)

Growth of single domain GaAs/fluoride/Si structures

Tsutsui, K., Asano, T., Ishiwara, H. & Furukawa, S., 2 2 1989, : : Journal of Crystal Growth. 95, 1-4, p. 398-402 5 p.

研究成果: ジャーナルへの寄稿記事

Rapid thermal annealing
Fluorides
fluorides
flat surfaces
disorders
2 引用 (Scopus)

Heteroepitaxial growth of gaas films on caf2/si(511) structures prepared with rapid thermal annealing

Asano, T., Ishiwara, H. & Furukawa, S., 10 1989, : : Japanese Journal of Applied Physics. 28, 10 R, p. 1784-1788 5 p.

研究成果: ジャーナルへの寄稿記事

Rapid thermal annealing
Epitaxial growth
annealing
Crystalline materials
Transmission electron microscopy
5 引用 (Scopus)

Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

Asano, T., Ishiwara, H. & Furukawa, S., 3 2 1989, : : Nuclear Inst. and Methods in Physics Research, B. 39, 1-4, p. 739-741 3 p.

研究成果: ジャーナルへの寄稿記事

Ion bombardment
ion irradiation
fluorides
dissolving
Dissolution
1990
323 引用 (Scopus)

Arrayed-Waveguide Grating for Wavelength Division Multi/Demultiplexer with Nanometre Resolution

Takahashi, H., Suzuki, S., Kato, K. & Nishi, I., 1 1990, : : Electronics Letters. 26, 2, p. 87-88 2 p.

研究成果: ジャーナルへの寄稿記事

Arrayed waveguide gratings
Diffraction gratings
Waveguides
Wavelength
Wavelength division multiplexing
1 引用 (Scopus)

high microwave performance ion-implanted gaas mesfets on inp substrates

Wada, M. & Kato, K., 10 1990, : : Electronics Letters. 26, 3, p. 197-199 3 p.

研究成果: ジャーナルへの寄稿記事

Microwaves
Ions
Substrates
Integrated optoelectronics
Metallorganic vapor phase epitaxy
13 引用 (Scopus)

Properties and device applications of hydrogenated amorphous silicon carbide films

Rahman, M. M., Yang, C. Y., Sugiarto, D., Byrne, A. S., Ju, M., Tran, K., Lui, K. H., Asano, T. & Stickle, W. F., 12 1 1990, : : Journal of Applied Physics. 67, 11, p. 7065-7070 6 p.

研究成果: ジャーナルへの寄稿記事

silicon carbides
amorphous silicon
diodes
heterojunctions
electric fields
1991
2 引用 (Scopus)

Optogalvanic wavelength calibrator for an automatic tunable laser system

Oki, Y., Izuha, T., Maeda, M., Honda, C., Hasegawa, Y., Futami, H., Izumi, J. & Matsuda, K., 10 1991, : : Japanese Journal of Applied Physics. 30, 10A, p. L1744-L1746

研究成果: ジャーナルへの寄稿記事

Laser tuning
tunable lasers
Wavelength
wavelengths
Lasers
6 引用 (Scopus)

Turbidity Spectra of Tungstic Acid in Gelation Process

Hara, K., Kanaya, H., Okabe, H. & Matsushige, K., 10 1991, : : journal of the physical society of japan. 60, 10, p. 3568-3572 5 p.

研究成果: ジャーナルへの寄稿記事

turbidity
gelation
acids
luminaires
slopes
1992
19 引用 (Scopus)

Density variation in heat- and pressure-treated egg white during gel-to-glass-like transition

Kanaya, H., Ishida, K., Hara, K., Okabe, H., Taki, S., Matsushige, K. & Takushi, E., 11 1992, : : Japanese Journal of Applied Physics. 31, 11 R, p. 3754-3758 5 p.

研究成果: ジャーナルへの寄稿記事

eggs
Gels
gels
Glass
heat
19 引用 (Scopus)

Effects of Light Exposure during Anodization on Photoluminescence of Porous Si

Asano, T., Tonouchi, M., Miyasato, T., Higa, K. & Aoki, S., 4 1992, : : Japanese Journal of Applied Physics. 31, 4, p. L373-L375

研究成果: ジャーナルへの寄稿記事

Luminescence
Photoluminescence
luminescence
photoluminescence
Raman spectroscopy
3 引用 (Scopus)

Observation of Transmitted Light Spectra during Gelation Process of Actomyosin

Kanaya, H., Hara, K., Okabe, H., Matsushige, K., Nishimuta, S., Muguruma, M. & Fukazawa, T., 3 1992, : : journal of the physical society of japan. 61, 3, p. 1113-1118 6 p.

研究成果: ジャーナルへの寄稿記事

gelation
turbidity
logarithms
muscles
time dependence
1993
7 引用 (Scopus)

Control of si solid phase nucleation by surface steps for high-performance thin-film transistors

Asano, T. & Makihira, K., 1 1993, : : Japanese Journal of Applied Physics. 32, 1 S, p. 482-485 4 p.

研究成果: ジャーナルへの寄稿記事

Thin film transistors
solid phases
Nucleation
transistors
Wet etching
3 引用 (Scopus)

Optical Measurements during Gelation Process of Muscle Protein under High Pressure

Kanaya, H., Hara, K., Okabe, H., Taki, S., Matsushige, K., Nishimuta, S. & Muguruma, M., 1 1 1993, : : journal of the physical society of japan. 62, 1, p. 362-367 6 p.

研究成果: ジャーナルへの寄稿記事

gelation
muscles
optical measurement
proteins
turbidity
4 引用 (Scopus)
eggs
x ray scattering
Time measurement
Gels
time measurement
7 引用 (Scopus)

Solvent-substitution effects on weight and volume changes during the desiccation process of egg-white gel

Kanaya, H., Hara, K., Takushi, E. & Matsushige, K., 6 1993, : : Japanese Journal of Applied Physics. 32, 6 R, p. 2905-2910 6 p.

研究成果: ジャーナルへの寄稿記事

eggs
drying
Substitution reactions
Gels
gels
22 引用 (Scopus)

Variations of mechanical properties in egg white during gel-to-glasslike transition

Koshoubu, N., Kanaya, H., Hara, K., Taki, S., Takushi, E. & Matsushige, K., 1 1 1993, : : Japanese Journal of Applied Physics. 32, 9 R, p. 4038-4041 4 p.

研究成果: ジャーナルへの寄稿記事

eggs
stiffness
Gels
Stiffness
gels
1994
165 引用 (Scopus)

110-GHz, 50%-efficiency mushroom- mesa waveguide p-i-n photodiode for a 1.55-μm wavelength

Kato, K., Kozen, S., Muramoto, Y. & Itaya, Y., 6 1994, : : IEEE Photonics Technology Letters. 6, 6, p. 719-721 3 p.

研究成果: ジャーナルへの寄稿記事

mesas
Photodiodes
photodiodes
Waveguides
waveguides
1 引用 (Scopus)

15Gbit/s optical receiver using waveguide pin photodiode

Miyamoto, Y., Hagimoto, K. & Kato, K., 1 1 1994, : : Electronics Letters. 30, 19, p. 1622-1623 2 p.

研究成果: ジャーナルへの寄稿記事

Optical receivers
Photodiodes
Waveguides
Frequency response
47 引用 (Scopus)

Electro-optic characterisation of ultrafast photodetectors using adiabatically compressed soliton pulses

Nagatsuma, T., Yaita, M., Shinagawa, M., Kato, K., Kozen, A., Iwatsuki, K. & Suzuki, K., 5 12 1994, : : Electronics Letters. 30, 10, p. 814-816 3 p.

研究成果: ジャーナルへの寄稿記事

Electrooptical effects
Photodetectors
Photodiodes
Solitons
Waveguides
14 引用 (Scopus)

Patterning of CVD diamond films by seeding and their field emission properties

Katsumata, S., Oobuchi, Y. & Asano, T., 11 1994, : : Diamond and Related Materials. 3, 11-12, p. 1296-1300 5 p.

研究成果: ジャーナルへの寄稿記事

Diamond
Diamond films
Field emission
Chemical vapor deposition
Diamonds
20 引用 (Scopus)

Transformation of egg-white glass into partially crystallized glass induced by heat treatment and gamma-ray irradiation

Kanaya, H., Nishida, T., Ohara, M., Hara, K., Matsushige, K., Takushi, E. & Matsumoto, Y., 1 1 1994, : : Japanese Journal of Applied Physics. 33, 1R, 1 p.

研究成果: ジャーナルへの寄稿記事

eggs
Gamma rays
heat treatment
Heat treatment
Irradiation
1995

0–90 GHz InAlAs/InGaAs/InP HEMT distributed based and amplifier 1C

Kimura, S., Imai, Y., Umeda, Y. & Enoki, T., 8 17 1995, : : Electronics Letters. 31, 17, p. 1430-1431 2 p.

研究成果: ジャーナルへの寄稿記事

High electron mobility transistors
Bandwidth
Compensation and Redress
1996
12 引用 (Scopus)
Etching
emitters
etching
Fabrication
Silicon
19 引用 (Scopus)

Fabrication of single-crystal Si microstructures by anodization

Higa, K. & Asano, T., 12 1 1996, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 12 SUPPL. B, p. 6648-6651 4 p.

研究成果: ジャーナルへの寄稿記事

Single crystals
Fabrication
microstructure
Microstructure
fabrication
9 引用 (Scopus)

Gas species dependent charge build-up in reactive ion etching

Arita, K. & Asano, T., 12 1 1996, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 12 SUPPL. B, p. 6534-6539 6 p.

研究成果: ジャーナルへの寄稿記事

Reactive ion etching
etching
Gases
gases
Plasmas
Passivation
Boron
Degradation
Hydrogen
Sheet resistance
1997

Effects of rf bias and substrate temperature on Si substrate cleaning using inductively coupled hydrogen plasma

Ikeda, A., Iwasaki, S., Nagashima, H., Ohta, S., Tsukamoto, K. & Kuroki, Y., 3 1 1997, : : Research Reports on Information Science and Electrical Engineering of Kyushu University. 2, 1, p. 138-144 7 p.

研究成果: ジャーナルへの寄稿記事

Cleaning
Plasmas
Hydrogen
Substrates
Temperature
12 引用 (Scopus)

Enhanced solid-phase crystallization of amorphous Si by plasma treatment using reactive ion etching

Asano, T., Aoto, K. & Okada, Y., 3 1 1997, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 3 SUPPL. B, p. 1415-1419 5 p.

研究成果: ジャーナルへの寄稿記事

Reactive ion etching
solid phases
Crystallization
etching
crystallization
3 引用 (Scopus)

Reduction of charge build-up during reactive ion etching by using silicon-on-insulator structures

Arita, K., Akamatsu, M. & Asano, T., 3 1 1997, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 3 SUPPL. B, p. 1505-1508 4 p.

研究成果: ジャーナルへの寄稿記事

Reactive ion etching
insulators
etching
Silicon
silicon