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Film density dependence of polymethylmethacrylate ablation under synchrotron radiation irradiation

Fujimura, T., Kuroki, Y., Hisakado, T., Ikeda, A., Hattori, R., Hakiai, Y., Hidaka, M., Choi, J. Y. & Chang, S. S., 2 1 2001, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40, 2 A, p. 916-917 2 p.

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

Flattening the surface of caf2si(100) structures by post-growth annealing

Asano, T., Ishiwara, H. & Furukawa, S., 7 1988, : : Japanese Journal of Applied Physics. 27, 7R, p. 1193-1198 6 p.

研究成果: ジャーナルへの寄稿記事

25 引用 (Scopus)

Flicker noise reduction in RF CMOS mixer using differential active inductor

Abdelghany, M. A., Pokharel, R. K., Kanaya, H. & Yoshida, K., 11 1 2011, : : Microwave and Optical Technology Letters. 53, 11, p. 2553-2556 4 p.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET

Uryu, Y. & Asano, T., 10 11 2001, : : Electronics Letters. 37, 21, p. 1313-1314 2 p.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

Formation of an epitaxial si/insulator/si structure by vacuum deposition of caf2 and si

Asano, T. & Ishiwara, H., 1 1982, : : Japanese Journal of Applied Physics. 21, 1 p.

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs

Asano, T., Ishiwara, H., Lee, H. C., Tsutsui, K. & Furukawa, S., 2 1986, : : Japanese Journal of Applied Physics. 25, 2 A, p. L139-L141

研究成果: ジャーナルへの寄稿記事

30 引用 (Scopus)

Formation of ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films

Fukada, T., Asano, T., Frukawa, S. & Ishiwara, H., 1 1987, : : Japanese Journal of Applied Physics. 26, 1 R, p. 117-121 5 p.

研究成果: ジャーナルへの寄稿記事

4 引用 (Scopus)

Formation of thick, thermally-stable high-resistivity-layers in GaAs by oxygen ion implantation

Asano, T., Atanassov, R. D., Ishiwara, H. & Furukawa, S., 5 1981, : : Japanese Journal of Applied Physics. 20, 5, p. 901-907 7 p.

研究成果: ジャーナルへの寄稿記事

18 引用 (Scopus)

Gas species dependent charge build-up in reactive ion etching

Arita, K. & Asano, T., 12 1 1996, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 12 SUPPL. B, p. 6534-6539 6 p.

研究成果: ジャーナルへの寄稿記事

9 引用 (Scopus)

Gated Si field emitter array prepared by using anodization

Higa, K., Nishii, K. & Asano, T., 3 1 1998, : : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 2, p. 651-653 3 p.

研究成果: ジャーナルへの寄稿記事

9 引用 (Scopus)
1 引用 (Scopus)

Growth and characterization of compositionally graded (ca, sr)f2 layers on si(111) substrates

Kanemaru, S., Ishiwara, H., Asano, T. & Furukawa, S., 6 1987, : : Japanese Journal of Applied Physics. 26, 6R, p. 848-851 4 p.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

Growth behavior of boron-doped diamond in microwave plasma-assisted chemical vapor deposition using trimethylboron as the dopant source

Maeda, H., Ohtsubo, K., Kameta, M., Saito, T., Kusakabe, K., Morooka, S. & Asano, T., 1 1998, : : Diamond and Related Materials. 7, 1, p. 88-95 8 p.

研究成果: ジャーナルへの寄稿記事

17 引用 (Scopus)

Growth of single domain GaAs/fluoride/Si structures

Tsutsui, K., Asano, T., Ishiwara, H. & Furukawa, S., 2 2 1989, : : Journal of Crystal Growth. 95, 1-4, p. 398-402 5 p.

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

Heteroepitaxial growth of gaas films on caf2/si(511) structures prepared with rapid thermal annealing

Asano, T., Ishiwara, H. & Furukawa, S., 10 1989, : : Japanese Journal of Applied Physics. 28, 10 R, p. 1784-1788 5 p.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

HETEROEPITAXIAL GROWTH OF GROUP-IIa-FLUORIDE FILMS ON Si SUBSTRATES.

Asano, T., Ishiwara, H. & Kaifu, N., 1 1 1983, : : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 22, 10, p. 1474-1481 8 p.

研究成果: ジャーナルへの寄稿記事

84 引用 (Scopus)

High efficiency, good linearity, and excellent phase linearity of 3.1-4.8 GHz CMOS UWB PA with a current-reused technique

Murad, S. A. Z., Pokharel, R., Sapawi, R., Kanaya, H. & Yoshida, K., 8 1 2010, : : IEEE Transactions on Consumer Electronics. 56, 3, p. 1241-1246 6 p., 5606253.

研究成果: ジャーナルへの寄稿記事

24 引用 (Scopus)

High intrinsic modulation bandwidth InGaAsP/InGaAsP 1.55μm asymmetric active multimode interferometer laser diode by using split pump configuration

Uddin, M. N., Kizu, T., Hinokuma, Y., Hong, B., Tajima, A., Kato, K. & Hamamoto, K., 1 1 2014, : : Japanese Journal of Applied Physics. 53, 8 SPEC. ISSUE 2, 08MB09.

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

High linearity technique for ultra-wideband low noise amplifier in 0.18 μm CMOS technology

Galal, A. I. A., Pokharel, R., Kanaya, H. & Yoshida, K., 1 1 2012, : : AEU - International Journal of Electronics and Communications. 66, 1, p. 12-17 6 p.

研究成果: ジャーナルへの寄稿記事

13 引用 (Scopus)

High-Q SWCPL for CMOS millimeter-wave technology

Mat, D. A. A., Pokharel, R., Sapawi, R., Kanaya, H. & Yoshida, K., 8 24 2012, : : IEICE Electronics Express. 9, 15, p. 1284-1289 6 p.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

Impact of rapid crystallization of Si using nickel-metal-induced lateral crystallization on thin-film transistor characteristics

Nagata, S., Nakagawa, G. & Asano, T., 2 1 2012, : : Japanese journal of applied physics. 51, 2 PART 2, 02BH04.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

Impedance-matched planar-antenna-integrated high-efficiency push-pull power amplifier with center-tapped transformer for 5 GHz wireless communication

Kuboki, T., Sadakiyo, T., Park, W. S. & Kanaya, H., 12 1 2018, : : Sensors and Materials. 30, 12, p. 2969-2978 10 p.

研究成果: ジャーナルへの寄稿記事

Impedance matching antenna-integrated high-efficiency energy harvesting circuit

Shinki, Y., Shibata, K., Mansour, M. & Kanaya, H., 8 2017, : : Sensors (Switzerland). 17, 8, 1763.

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)
10 引用 (Scopus)

Improvement of crystalline quality of Si films on CaF2/Si structures by ion implantation and solid phase recrystallization

Asano, T., Ishiwara, H., Orihara, K. & Furukawa, S., 2 1983, : : Japanese Journal of Applied Physics. 22, 2, p. L118-L120

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

Improvement of the interface properties of fluoride/gaas(100) structures by postgrowth annealing

Kim, K. H., Ishiwara, H., Asano, T. & Furukawa, S., 11 1988, : : Japanese Journal of Applied Physics. 27, 11 A, p. L2180-L2182

研究成果: ジャーナルへの寄稿記事

11 引用 (Scopus)

Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers

Kanemaru, S., Ishiwara, H., Asano, T. & Furukawa, S., 8 3 1986, : : Surface Science. 174, 1-3, p. 666-670 5 p.

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse

Ikeda, A., Marui, D., Sumina, R., Ikenoue, H. & Asano, T., 11 1 2017, : : Materials Science in Semiconductor Processing. 70, p. 193-196 4 p.

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

Increased emission efficiency of gated cold cathode with carbonic nano-pillars

Yoshida, T., Baba, A. & Asano, T., 6 1 2004, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 6 B, p. 3901-3905 5 p.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)
12 引用 (Scopus)

Inkjet-printed metal-colloid-induced crystallization of amorphous silicon

Ishida, Y., Nakagawa, G. & Asano, T., 3 16 2007, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 3 B, p. 1263-1267 5 p.

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

Inkjet printing of nickel nanosized particles for metal-induced crystallization of amorphous silicon

Ishida, Y., Nakagawa, G. & Asano, T., 9 20 2007, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 9 B, p. 6437-6443 7 p.

研究成果: ジャーナルへの寄稿記事

15 引用 (Scopus)

In situ observation of ultrasonic flip-chip bonding using high-speed camera

Shuto, T. & Asano, T., 3 1 2015, : : Japanese Journal of Applied Physics. 54, 3, 030204.

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

Inter-particle interaction and thermal stability of ultra-fine Ba ferrite particles for high-density recording

Suzuki, T. & Tanaka, T., 4 1 2002, : : Journal of Magnetism and Magnetic Materials. 242-245, PART I, p. 328-330 3 p.

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

Investigation of enhanced impact ionization in uniaxially strained Si n-channel metal oxide semiconductor field effect transistor

Adachi, S. & Asano, T., 4 1 2010, : : Japanese journal of applied physics. 49, 4 PART 2, 04DC14.

研究成果: ジャーナルへの寄稿記事

4 引用 (Scopus)

Investigation of the interface between LiNbO3 and Si wafers bonded by laser irradiation

Takigawa, R., Kawano, H., Ikenoue, H. & Asano, T., 8 1 2017, : : Japanese Journal of Applied Physics. 56, 8, 088002.

研究成果: ジャーナルへの寄稿記事

9 引用 (Scopus)

Investigation on bistability and fabrication of bistable prestressed curved beam

Pane, I. Z. & Asano, T., 6 20 2008, : : Japanese journal of applied physics. 47, 6 PART 2, p. 5291-5296 6 p.

研究成果: ジャーナルへの寄稿記事

28 引用 (Scopus)

Investigation on characteristic variation of polycrystalline silicon thin-film transistor using laterally grown film

Akiyama, K., Watanabe, K. & Asano, T., 3 1 2009, : : Japanese journal of applied physics. 48, 3 PART 3, 03B014.

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

Ion beam bombardment effect on contacts in solution-processed single-walled carbon nanotube thin film transistor

Yi, X., Nakagawa, G., Ozawa, H., Fujigaya, T., Nakashima, N. & Tanemasa, A., 9 1 2011, : : Japanese journal of applied physics. 50, 9 PART 1, 098003.

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

Ion channeling studies of preferentially (111) oriented BaF2 films on amorphous SiO2 substrates

Ishiwara, H., Kaifu, N. & Asano, T., 12 1 1984, : : Applied Physics Letters. 45, 11, p. 1184-1186 3 p.

研究成果: ジャーナルへの寄稿記事

Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

Asano, T., Ishiwara, H. & Furukawa, S., 3 2 1989, : : Nuclear Inst. and Methods in Physics Research, B. 39, 1-4, p. 739-741 3 p.

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

Joule heating of field emitter tip fabricated on glass substrate

Higa, K. & Asano, T., 5 2004, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 5 A, p. 2749-2750 2 p.

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

Linearity improvement of 5.2-GHz CMOS up-conversion mixer for wireless applications

Murad, S. A. Z., Shahimin, M. M., Pokharel, R. K., Kanaya, H. & Yoshida, K., 4 1 2012, : : Microwave and Optical Technology Letters. 54, 4, p. 923-925 3 p.

研究成果: ジャーナルへの寄稿記事

11 引用 (Scopus)

Linearization technique using bipolar transistor at 5 GHz low noise amplifier

Galal, A. I. A., Pokharel, R. K., Kanaya, H. & Yoshida, K., 10 1 2010, : : AEU - International Journal of Electronics and Communications. 64, 10, p. 978-982 5 p.

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

Lithium niobate ridged waveguides with smooth vertical sidewalls fabricated by an ultra-precision cutting method

Takigawa, R., Higurashi, E., Kawanishi, T. & Asano, T., 2014, : : Optics Express. 22, 22, p. 27733-27738 6 p.

研究成果: ジャーナルへの寄稿記事

22 引用 (Scopus)

Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator

Nishisaka, M., Shirata, O., Sakamoto, D., Enokida, T., Hagino, H. & Asano, T., 6 5 2006, : : Thin Solid Films. 508, 1-2, p. 256-259 4 p.

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

Location and orientation control of Si grain by combining metal-induced lateral crystallization and excimer laser annealing

Higashi, N., Nakagawa, G., Asano, T., Miyasaka, M. & Stoemenos, J., 5 25 2006, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 5 B, p. 4347-4350 4 p.

研究成果: ジャーナルへの寄稿記事

14 引用 (Scopus)