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10 引用 (Scopus)

Impedance matching antenna-integrated high-efficiency energy harvesting circuit

Shinki, Y., Shibata, K., Mansour, M. & Kanaya, H., 8 2017, : : Sensors (Switzerland). 17, 8, 1763.

研究成果: Contribution to journalArticle

8 引用 (Scopus)

Impact of rapid crystallization of Si using nickel-metal-induced lateral crystallization on thin-film transistor characteristics

Nagata, S., Nakagawa, G. & Asano, T., 2 1 2012, : : Japanese journal of applied physics. 51, 2 PART 2, 02BH04.

研究成果: Contribution to journalArticle

2 引用 (Scopus)

High-Q SWCPL for CMOS millimeter-wave technology

Mat, D. A. A., Pokharel, R., Sapawi, R., Kanaya, H. & Yoshida, K., 8 24 2012, : : IEICE Electronics Express. 9, 15, p. 1284-1289 6 p.

研究成果: Contribution to journalArticle

1 引用 (Scopus)

Highly efficient 40 GHz waveguide InGaAs p-i-n photodiode employing multimode waveguide structure

Kato, K., Hata, S., Kozer, A., Yoshida, J. I. & Kawano, K., 9 1991, : : IEEE Photonics Technology Letters. 3, 9, p. 820-822 3 p.

研究成果: Contribution to journalArticle

27 引用 (Scopus)

High linearity technique for ultra-wideband low noise amplifier in 0.18 μm CMOS technology

Galal, A. I. A., Pokharel, R., Kanaya, H. & Yoshida, K., 1 1 2012, : : AEU - International Journal of Electronics and Communications. 66, 1, p. 12-17 6 p.

研究成果: Contribution to journalArticle

13 引用 (Scopus)

High intrinsic modulation bandwidth InGaAsP/InGaAsP 1.55μm asymmetric active multimode interferometer laser diode by using split pump configuration

Uddin, M. N., Kizu, T., Hinokuma, Y., Hong, B., Tajima, A., Kato, K. & Hamamoto, K., 1 1 2014, : : Japanese Journal of Applied Physics. 53, 8 SPEC. ISSUE 2, 08MB09.

研究成果: Contribution to journalArticle

3 引用 (Scopus)

High-Efficiency Waveguide InGaAs pin Photodiode with Bandwidth of over 40 GHz

Kato, K., Hata, S., Kozen, A., Yoshida, J. I. & Kawano, K., 5 1991, : : IEEE Photonics Technology Letters. 3, 5, p. 473-474 2 p.

研究成果: Contribution to journalArticle

26 引用 (Scopus)

High efficiency, good linearity, and excellent phase linearity of 3.1-4.8 GHz CMOS UWB PA with a current-reused technique

Murad, S. A. Z., Pokharel, R., Sapawi, R., Kanaya, H. & Yoshida, K., 8 1 2010, : : IEEE Transactions on Consumer Electronics. 56, 3, p. 1241-1246 6 p., 5606253.

研究成果: Contribution to journalArticle

24 引用 (Scopus)

Heteroepitaxial growth of gaas films on caf2/si(511) structures prepared with rapid thermal annealing

Asano, T., Ishiwara, H. & Furukawa, S., 10 1989, : : Japanese Journal of Applied Physics. 28, 10 R, p. 1784-1788 5 p.

研究成果: Contribution to journalArticle

2 引用 (Scopus)

Growth of single domain GaAs/fluoride/Si structures

Tsutsui, K., Asano, T., Ishiwara, H. & Furukawa, S., 2 2 1989, : : Journal of Crystal Growth. 95, 1-4, p. 398-402 5 p.

研究成果: Contribution to journalArticle

7 引用 (Scopus)

Growth behavior of boron-doped diamond in microwave plasma-assisted chemical vapor deposition using trimethylboron as the dopant source

Maeda, H., Ohtsubo, K., Kameta, M., Saito, T., Kusakabe, K., Morooka, S. & Asano, T., 1 1998, : : Diamond and Related Materials. 7, 1, p. 88-95 8 p.

研究成果: Contribution to journalArticle

17 引用 (Scopus)

Growth and characterization of compositionally graded (ca, sr)f2 layers on si(111) substrates

Kanemaru, S., Ishiwara, H., Asano, T. & Furukawa, S., 6 1987, : : Japanese Journal of Applied Physics. 26, 6R, p. 848-851 4 p.

研究成果: Contribution to journalArticle

2 引用 (Scopus)
1 引用 (Scopus)

Gated Si field emitter array prepared by using anodization

Higa, K., Nishii, K. & Asano, T., 3 1 1998, : : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 2, p. 651-653 3 p.

研究成果: Contribution to journalArticle

9 引用 (Scopus)

Formation of thick, thermally-stable high-resistivity-layers in GaAs by oxygen ion implantation

Asano, T., Atanassov, R. D., Ishiwara, H. & Furukawa, S., 5 1981, : : Japanese Journal of Applied Physics. 20, 5, p. 901-907 7 p.

研究成果: Contribution to journalArticle

18 引用 (Scopus)

Formation of ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films

Fukada, T., Asano, T., Frukawa, S. & Ishiwara, H., 1 1987, : : Japanese Journal of Applied Physics. 26, 1 R, p. 117-121 5 p.

研究成果: Contribution to journalArticle

4 引用 (Scopus)

Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source

Okamoto, K., Kikuchi, T., Ikeda, A., Ikenoue, H. & Asano, T., 2019, : : Japanese journal of applied physics. 58, SD, SDDF13.

研究成果: Contribution to journalArticle

公開

Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs

Asano, T., Ishiwara, H., Lee, H. C., Tsutsui, K. & Furukawa, S., 2 1986, : : Japanese Journal of Applied Physics. 25, 2 A, p. L139-L141

研究成果: Contribution to journalArticle

30 引用 (Scopus)

Formation of an epitaxial si/insulator/si structure by vacuum deposition of caf2 and si

Asano, T. & Ishiwara, H., 1 1982, : : Japanese journal of applied physics. 21, 1 p.

研究成果: Contribution to journalArticle

10 引用 (Scopus)

Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET

Uryu, Y. & Asano, T., 10 11 2001, : : Electronics Letters. 37, 21, p. 1313-1314 2 p.

研究成果: Contribution to journalArticle

1 引用 (Scopus)

Flicker noise reduction in RF CMOS mixer using differential active inductor

Abdelghany, M. A., Pokharel, R. K., Kanaya, H. & Yoshida, K., 11 1 2011, : : Microwave and Optical Technology Letters. 53, 11, p. 2553-2556 4 p.

研究成果: Contribution to journalArticle

1 引用 (Scopus)

Flattening the surface of caf2si(100) structures by post-growth annealing

Asano, T., Ishiwara, H. & Furukawa, S., 7 1988, : : Japanese Journal of Applied Physics. 27, 7R, p. 1193-1198 6 p.

研究成果: Contribution to journalArticle

25 引用 (Scopus)

Film density dependence of polymethylmethacrylate ablation under synchrotron radiation irradiation

Fujimura, T., Kuroki, Y., Hisakado, T., Ikeda, A., Hattori, R., Hakiai, Y., Hidaka, M., Choi, J. Y. & Chang, S. S., 2 2001, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40, 2 A, p. 916-917 2 p.

研究成果: Contribution to journalArticle

6 引用 (Scopus)

Field emission from metal particles bound with a photoresist

Baba, A. & Asano, T., 1 1 2003, : : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21, 1 SPEC., p. 552-556 5 p.

研究成果: Contribution to journalArticle

7 引用 (Scopus)

Field emission characteristics of defect-controlled polyimide tunneling cathode

Baba, A., Yoshida, T. & Asano, T., 2004, : : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22, 3, p. 1353-1357 5 p.

研究成果: Contribution to journalArticle

3 引用 (Scopus)

Field electron emission from inkjet-printed carbon black

Baba, A., Yoshida, T., Matsuzaki, K., Ishida, Y. & Asano, T., 6 1 2004, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 6 B, p. 3923-3927 5 p.

研究成果: Contribution to journalArticle

15 引用 (Scopus)

Fast wavelength switching with tunable distributed amplification distributed feedback laser by feedforward control technique

Onji, H., Takeuchi, S., Tatsumoto, Y., Nunoya, N., Shimokozono, M., Ishii, H. & Kato, K., 1 1 2014, : : Japanese Journal of Applied Physics. 53, 8 SPEC. ISSUE 2, 08MB11.

研究成果: Contribution to journalArticle

2 引用 (Scopus)

Fabrication of ultrathin Ni-Zn ferrite films using electron cyclotron resonance sputtering method

Tanaka, T., Kurisu, H., Matsuura, M., Shimosato, Y., Okada, S., Oshiro, K., Fujimori, H. & Yamamoto, S., 5 25 2006, : : Journal of Applied Physics. 99, 8, 08N507.

研究成果: Contribution to journalArticle

10 引用 (Scopus)

Fabrication of single-crystal Si microstructures by anodization

Higa, K. & Asano, T., 12 1996, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 12 SUPPL. B, p. 6648-6651 4 p.

研究成果: Contribution to journalArticle

19 引用 (Scopus)
5 引用 (Scopus)

Fabrication of open-top microchannel plate using deep X-ray exposure mask made with silicon on insulator substrate

Fujimura, T., Ikeda, A., Etoh, S. I., Hattori, R., Kuroki, Y. & Chang, S. S., 6 2003, : : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 42, 6 B, p. 4102-4106 5 p.

研究成果: Contribution to journalArticle

11 引用 (Scopus)

Fabrication Of Mosfets In Si/CaF2/Si Heteroepitaxial Structures

Asano, T., Kuriyama, Y. & Ishiwara, H., 1 1 1985, : : Electronics Letters. 21, 9, p. 386-387 2 p.

研究成果: Contribution to journalArticle

25 引用 (Scopus)
18 引用 (Scopus)

Fabrication of circulator with coplanar wave guide structure

Oshiro, K., Mikami, H., Fujii, S., Tanaka, T., Fujimori, H., Matsuura, M. & Yamamoto, S., 10 2005, : : IEEE Transactions on Magnetics. 41, 10, p. 3550-3552 3 p.

研究成果: Contribution to journalArticle

11 引用 (Scopus)

Fabrication of carbon-based field emitters using stamp technology

Baba, A., Hizukuri, M., Iwamoto, M. & Asano, T., 1 1 1999, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 12 B, p. 7203-7207 5 p.

研究成果: Contribution to journalArticle

18 引用 (Scopus)

Fabrication of back-side illuminated complementary metal oxide semiconductor image sensor using compliant bump

Watanabe, N., Tsunoda, I., Takao, T., Tanaka, K. & Asano, T., 4 1 2010, : : Japanese journal of applied physics. 49, 4 PART 2, 04DB01.

研究成果: Contribution to journalArticle

41 引用 (Scopus)

Fabrication of a bonded LNOI waveguide structure on Si substrate using ultra-precision cutting

Takigawa, R., Kamimura, K., Asami, K., Nakamoto, K., Tomimatsu, T. & Asano, T., 2 1 2020, : : Japanese journal of applied physics. 59, SB, SBBD03.

研究成果: Contribution to journalArticle

Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser

Ikeda, A., Marui, D., Ikenoue, H. & Asano, T., 5 2015, : : Materials Science Forum. 821-823, p. 448-451

研究成果: Contribution to journalArticle

Epitaxial relations in lattice-matched (ca, sr)f2 films grown on gaas{111} and ge(111) substrates

Ishiwara, H., Tsutsui, K., Asano, T. & Furukawa, S., 10 1984, : : Japanese Journal of Applied Physics. 23, 10, p. L803-L805

研究成果: Contribution to journalArticle

14 引用 (Scopus)

Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates

Tsutsui, K., Ishiwara, H., Asano, T. & Furukawa, S., 12 1 1985, : : Applied Physics Letters. 46, 12, p. 1131-1133 3 p.

研究成果: Contribution to journalArticle

28 引用 (Scopus)

Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature

Asano, T. & Ishiwara, H., 12 1 1984, : : Journal of Applied Physics. 55, 10, p. 3566-3570 5 p.

研究成果: Contribution to journalArticle

55 引用 (Scopus)

Epitaxial growth of ge films onto caf 2/si structures

Asano, T. & Ishiwara, H., 10 1982, : : Japanese Journal of Applied Physics. 21, 10, p. L630-L632

研究成果: Contribution to journalArticle

19 引用 (Scopus)

Enhanced solid-phase crystallization of amorphous Si by plasma treatment using reactive ion etching

Asano, T., Aoto, K. & Okada, Y., 3 1997, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 3 SUPPL. B, p. 1415-1419 5 p.

研究成果: Contribution to journalArticle

12 引用 (Scopus)

Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1-xMgxO3%

Li, L., Ikeda, A. & Asano, T., 6 1 2016, : : Japanese Journal of Applied Physics. 55, 6, 06GJ05.

研究成果: Contribution to journalArticle

4 引用 (Scopus)