研究成果 1980 2020

フィルター
記事
1985
28 引用 (Scopus)

Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates

Tsutsui, K., Ishiwara, H., Asano, T. & Furukawa, S., 12 1 1985, : : Applied Physics Letters. 46, 12, p. 1131-1133 3 p.

研究成果: ジャーナルへの寄稿記事

fluorides
transmission electron microscopy
ions
1984
55 引用 (Scopus)

Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature

Asano, T. & Ishiwara, H., 12 1 1984, : : Journal of Applied Physics. 55, 10, p. 3566-3570 5 p.

研究成果: ジャーナルへの寄稿記事

room temperature
surface reactions
thick films
vacuum
ions
14 引用 (Scopus)

Epitaxial relations in lattice-matched (ca, sr)f2 films grown on gaas{111} and ge(111) substrates

Ishiwara, H., Tsutsui, K., Asano, T. & Furukawa, S., 10 1984, : : Japanese Journal of Applied Physics. 23, 10, p. L803-L805

研究成果: ジャーナルへの寄稿記事

Substrates
Epitaxial films
Backscattering
Crystal orientation
Lattice constants

Ion channeling studies of preferentially (111) oriented BaF2 films on amorphous SiO2 substrates

Ishiwara, H., Kaifu, N. & Asano, T., 12 1 1984, : : Applied Physics Letters. 45, 11, p. 1184-1186 3 p.

研究成果: ジャーナルへの寄稿記事

ions
transmission electron microscopy
vacuum deposition
crystallites
x ray diffraction
1983
84 引用 (Scopus)

HETEROEPITAXIAL GROWTH OF GROUP-IIa-FLUORIDE FILMS ON Si SUBSTRATES.

Asano, T., Ishiwara, H. & Kaifu, N., 1 1 1983, : : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 22, 10, p. 1474-1481 8 p.

研究成果: ジャーナルへの寄稿記事

Epitaxial growth
Substrates
Crystallites
Crystal orientation
crystallites
2 引用 (Scopus)

Radiation damage in epitaxial CaF2films on Si substrates by Ar+ion implantation

Ishiwara, H., Orihara, K. & Asano, T., 7 1983, : : Japanese Journal of Applied Physics. 22, 7, p. L458-L460

研究成果: ジャーナルへの寄稿記事

Radiation damage
Rutherford backscattering spectroscopy
Ion bombardment
radiation damage
Ion implantation
1982
19 引用 (Scopus)

Epitaxial growth of ge films onto caf 2/si structures

Asano, T. & Ishiwara, H., 10 1982, : : Japanese Journal of Applied Physics. 21, 10, p. L630-L632

研究成果: ジャーナルへの寄稿記事

Epitaxial growth
Crystalline materials
Vacuum evaporation
Substrates
surface roughness
10 引用 (Scopus)

Formation of an epitaxial si/insulator/si structure by vacuum deposition of caf2 and si

Asano, T. & Ishiwara, H., 1 1 1982, : : Japanese Journal of Applied Physics. 21, 1 p.

研究成果: ジャーナルへの寄稿記事

Vacuum deposition
vacuum deposition
insulators
Rutherford backscattering spectroscopy
Substrates
1981
18 引用 (Scopus)

Formation of thick, thermally-stable high-resistivity-layers in GaAs by oxygen ion implantation

Asano, T., Atanassov, R. D., Ishiwara, H. & Furukawa, S., 1 1 1981, : : Japanese Journal of Applied Physics. 20, 5, p. 901-907 7 p.

研究成果: ジャーナルへの寄稿記事

oxygen ions
Ion implantation
ion implantation
implantation
electrical resistivity
46 引用 (Scopus)

Single crystalline silicide formation

Saitoh, S., Ishiwara, H., Asano, T. & Furukawa, S., 9 1981, : : Japanese Journal of Applied Physics. 20, 9, p. 1649-1656 8 p.

研究成果: ジャーナルへの寄稿記事

Crystalline materials
backscattering
Transmission electron microscopy
Thin films
transmission electron microscopy
1980
4 引用 (Scopus)

Carrier compensation in O+ implanted n-type GaAs

Asano, T. & Hemment, P. L. F., 1 1 1980, : : Solid-State Electronics. 23, 10, p. 1089-1090 2 p.

研究成果: ジャーナルへの寄稿記事

electrical measurement
oxygen atoms
Annealing
Oxygen
dosage