山本圭介

Assistant Professor

国立大学法人　九州大学, Energy Engineering Sciences

ウェブサイトhttps://hyoka.ofc.kyushu-u.ac.jp/search/details/K004917/index.html

出典: Scopus
Pureの文献数とScopusの被引用数に基づいて算出されます

年別の研究成果

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463 被引用数
14 h-index
42 Article
13 Conference contribution
1 Comment/debate
1 Conference article

Border-trap characterization for Ge gate stacks with Thin GeO_x layer using deep-level transient spectroscopy
Nakashima, H., Wen, W. C., Yamamoto, K. & Wang, D., 2020, PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. Liu, Q., Hartmann, J. M., Holt, J. R., Gong, X., Jain, V., Niu, G., Masini, G., Ogura, A., Miyazaki, S., Ostling, M., Bi, W., Schulze, A. & Mai, A. (eds.). 5 ed. IOP Publishing Ltd., p. 395-404 10 p. 395. (ECS Transactions; vol. 98, no. 5).
研究成果: Chapter in Book/Report/Conference proceeding › Conference contribution
Erratum: Border trap evaluation for SiO₂/GeO₂/Ge gate stacks using deep-level transient spectroscopy (J. Appl. Phys. (2018) 124 (205303) DOI: 10.1063/1.505529)
Wen, W. C., Yamamoto, K., Wang, D. & Nakashima, H., 4 30 2020, In: Journal of Applied Physics. 127, 16, 169901.
研究成果: Contribution to journal › Comment/debate › 査読

Open Access
High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al₂O₃ interlayer and its internal charge analysis
Oka, R., Yamamoto, K., Akamine, H., Wang, D., Nakashima, H., Hishiki, S. & Kawamura, K., 4 1 2020, In: Japanese journal of applied physics. 59, SG, SGGD17.
研究成果: Contribution to journal › Article › 査読
2 被引用数 (Scopus)
Interface trap and border trap characterization for Al₂O₃/GeO_x/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET
Wen, W. C., Nagatomi, Y., Akamine, H., Yamamoto, K., Wang, D. & Nakashima, H., 6 1 2020, In: AIP Advances. 10, 6, 065119.
研究成果: Contribution to journal › Article › 査読

Open Access
1 被引用数 (Scopus)
Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene
Solís-Fernández, P., Terao, Y., Kawahara, K., Nishiyama, W., Uwanno, T., Lin, Y. C., Yamamoto, K., Nakashima, H., Nakashima, H., Nagashio, K., Hibino, H., Suenaga, K. & Ago, H., 6 23 2020, In: ACS nano. 14, 6, p. 6834-6844 11 p.
研究成果: Contribution to journal › Article › 査読
7 被引用数 (Scopus)

Border-trap characterization for Ge gate stacks with Thin GeOx layer using deep-level transient spectroscopy

Erratum: Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy (J. Appl. Phys. (2018) 124 (205303) DOI: 10.1063/1.505529)

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis

Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET

Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene

Border-trap characterization for Ge gate stacks with Thin GeO_x layer using deep-level transient spectroscopy

Erratum: Border trap evaluation for SiO₂/GeO₂/Ge gate stacks using deep-level transient spectroscopy (J. Appl. Phys. (2018) 124 (205303) DOI: 10.1063/1.505529)

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al₂O₃ interlayer and its internal charge analysis

Interface trap and border trap characterization for Al₂O₃/GeO_x/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET