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研究成果 2006 2019

  • 397 引用
  • 13 h指数
  • 39 記事
  • 8 会議での発言
  • 1 Conference article
2019

Border-trap characterization for Ge gate stacks using deep-level transient spectroscopy

Nakashima, H., Wen, W. C., Yamamoto, K. & Wang, D., 1 1 2019, Semiconductor Process Integration 11. Murota, J., Claeys, C., Iwai, H., Tao, M., Deleonibus, S., Mai, A., Shiojima, K. & Cao, Y. (版). 4 版 Electrochemical Society Inc., p. 3-10 8 p. (ECS Transactions; 巻数 92, 番号 4).

研究成果: 著書/レポートタイプへの貢献会議での発言

Deep level transient spectroscopy
Capacitors
Valence bands
Conduction bands
Metals

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate

Maekrua, T., Goto, T., Nakae, K., Yamamoto, K., Nakashima, H. & Wang, D., 1 1 2019, : : Japanese Journal of Applied Physics. 58, SB, SBBE05.

研究成果: ジャーナルへの寄稿記事

公開
Electroluminescence
Diodes
diodes
insulators
Fabrication
公開
Field effect transistors
field effect transistors
insulators
space transportation system
Metals
3 引用 (Scopus)

Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass

Moto, K., Yamamoto, K., Imajo, T., Suemasu, T., Nakashima, H. & Toko, K., 5 27 2019, : : Applied Physics Letters. 114, 21, 212107.

研究成果: ジャーナルへの寄稿記事

公開
solid phases
transistors
glass
thin films
hole mobility
2018
3 引用 (Scopus)

Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy

Wen, W. C., Yamamoto, K., Wang, D. & Nakashima, H., 11 28 2018, : : Journal of Applied Physics. 124, 20, 205303.

研究成果: ジャーナルへの寄稿記事

borders
metal oxide semiconductors
traps
capacitors
evaluation
7 引用 (Scopus)

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °c

Higashi, H., Kudo, K., Yamamoto, K., Yamada, S., Kanashima, T., Tsunoda, I., Nakashima, H. & Hamaya, K., 6 7 2018, : : Journal of Applied Physics. 123, 21, 215704.

研究成果: ジャーナルへの寄稿記事

electrical properties
crystallization
transistors
contamination
leakage
9 引用 (Scopus)

Two-step synthesis and characterization of vertically stacked SnS-WS2 and SnS-MoS2 p-n heterojunctions

Sukma Aji, A., Izumoto, M., Suenaga, K., Yamamoto, K., Nakashima, H. & Ago, H., 1 1 2018, : : Physical Chemistry Chemical Physics. 20, 2, p. 889-897 9 p.

研究成果: ジャーナルへの寄稿記事

Heterojunctions
heterojunctions
synthesis
Chemical vapor deposition
vapor deposition
1 引用 (Scopus)
trajectory control
Sputter deposition
interlayers
Nitrogen
Metals
2017
4 引用 (Scopus)
MOSFET devices
metal oxide semiconductors
Etching
field effect transistors
etching
1 引用 (Scopus)

Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer

Nakashima, H., Okamoto, H., Yamamoto, K. & Wang, D., 1 1 2017, ECS Transactions. Shiojima, K., Mai, A., Murota, J., Chin, P., Claeys, C. L., Iwai, H., Deleonibus, S. & Tao, M. (版). 4 版 Electrochemical Society Inc., p. 97-106 10 p. (ECS Transactions; 巻数 80, 番号 4).

研究成果: 著書/レポートタイプへの貢献会議での発言

Metals
Sputter deposition
Metallizing
Fermi level
Electric properties
1 引用 (Scopus)

Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes

Maekura, T., Tanaka, K., Motoyama, C., Yoneda, R., Yamamoto, K., Nakashima, H. & Wang, D., 8 30 2017, : : Semiconductor Science and Technology. 32, 10, 104001.

研究成果: ジャーナルへの寄稿記事

Electroluminescence
electroluminescence
Diodes
Energy gap
Metals
4 引用 (Scopus)

Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

Kasahara, K., Higashi, H., Nakano, M., Nagatomi, Y., Yamamoto, K., Nakashima, H. & Hamaya, K., 11 1 2017, : : Materials Science in Semiconductor Processing. 70, p. 68-72 5 p.

研究成果: ジャーナルへの寄稿記事

Germanium
Hole mobility
hole mobility
germanium
Electric properties
4 引用 (Scopus)

Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

Kanashima, T., Yamashiro, R., Zenitaka, M., Yamamoto, K., Wang, D., Tadano, J., Yamada, S., Nohira, H., Nakashima, H. & Hamaya, K., 11 1 2017, : : Materials Science in Semiconductor Processing. 70, p. 260-264 5 p.

研究成果: ジャーナルへの寄稿記事

Lutetium
Germanium
lutetium
germanium
Electric properties
2 引用 (Scopus)
Field effect transistors
field effect transistors
conduction
Fabrication
space transportation system
3 引用 (Scopus)

Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack

Nagatomi, Y., Tateyama, T., Tanaka, S., Wen, W. C., Sakaguchi, T., Yamamoto, K., Zhao, L., Wang, D. & Nakashima, H., 11 1 2017, : : Materials Science in Semiconductor Processing. 70, p. 246-253 8 p.

研究成果: ジャーナルへの寄稿記事

MOSFET devices
metal oxide semiconductors
field effect transistors
Annealing
Atoms
2016
2 引用 (Scopus)

A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes

Fujita, Y., Yamada, M., Nagatomi, Y., Yamamoto, K., Yamada, S., Sawano, K., Kanashima, T., Nakashima, H. & Hamaya, K., 6 2016, : : Japanese Journal of Applied Physics. 55, 6, 63001.

研究成果: ジャーナルへの寄稿記事

MOSFET devices
metal oxide semiconductors
Dry etching
field effect transistors
Epilayers
3 引用 (Scopus)
germanium diodes
Germanium
Light emission
Electroluminescence
electroluminescence
2 引用 (Scopus)
Light emission
Germanium
Passivation
passivity
light emission
2015
14 引用 (Scopus)
fins
electroluminescence
germanium
room temperature
metals
13 引用 (Scopus)
metal nitrides
transition metals
electrical properties
interlayers
nitrides

Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices

Nakashima, H., Yamamoto, K. & Wang, D., 1 1 2015, ULSI Process Integration 9. Murota, J., Claeys, C., Deleonibus, S., Tao, M. & Iwai, H. (版). 10 版 Electrochemical Society Inc., p. 55-66 12 p. (ECS Transactions; 巻数 69, 番号 10).

研究成果: 著書/レポートタイプへの貢献会議での発言

Nitrides
Optoelectronic devices
Electric properties
Carrier mobility
Light emission
26 引用 (Scopus)

Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates

Kasahara, K., Nagatomi, Y., Yamamoto, K., Higashi, H., Nakano, M., Yamada, S., Wang, D., Nakashima, H. & Hamaya, K., 10 5 2015, : : Applied Physics Letters. 107, 14, 142102.

研究成果: ジャーナルへの寄稿記事

germanium
transistors
electrical properties
glass
thin films
8 引用 (Scopus)

Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs

Nagatomi, Y., Tanaka, S., Nagaoka, Y., Yamamoto, K., Wang, D. & Nakashima, H., 7 1 2015, : : Japanese Journal of Applied Physics. 54, 7, 070306.

研究成果: ジャーナルへの寄稿記事

Drain current
Passivation
Transistors
field effect transistors
Fabrication
2014

Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure

Wang, D., Kamezawa, S., Yamamoto, K. & Nakashima, H., 1 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 109-110 2 p. 6874642. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

研究成果: 著書/レポートタイプへの貢献会議での発言

Electroluminescence
Germanium
Energy gap
Metals
Temperature

Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

Yamamoto, K., Wang, D. & Nakashima, H., 1 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 91-92 2 p. 6874625. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

研究成果: 著書/レポートタイプへの貢献会議での発言

Fermi level
Nitrides
Metals
2 引用 (Scopus)

Investigation of Al-PMA effect on Al2O3/GeOX/Ge gate stack

Nagatomi, Y., Nagaoka, Y., Yamamoto, K., Wang, D. & Nakashima, H., 1 1 2014, : : ECS Transactions. 64, 6, p. 261-266 6 p.

研究成果: ジャーナルへの寄稿Conference article

Metallizing
Annealing
Interface states
Energy gap
Thin films
3 引用 (Scopus)
Deep level transient spectroscopy
Interface states
interlayers
Energy gap
MISFET devices
24 引用 (Scopus)
interlayers
conduction bands
electrical properties
nitrogen
2013

Development of metal source/drain Ge-CMOS using TiN/Ge and HfGe/Ge contacts

Nakashima, H., Yamamoto, K. & Wang, D., 1 1 2013, : : ECS Transactions. 58, 9, p. 167-178 12 p.

研究成果: ジャーナルへの寄稿記事

Fabrication
Carrier mobility
Fermi level
Metals
Electrons
17 引用 (Scopus)
hole mobility
metal oxide semiconductors
field effect transistors
oxides
electric fields

Fabrication of metal-nitride/Si contacts with low electron barrier height

Yamamoto, K., Asakawa, K., Wang, D. & Nakashima, H., 1 1 2013, : : ECS Transactions. 58, 9, p. 53-59 7 p.

研究成果: ジャーナルへの寄稿記事

Nitrides
Fabrication
Electrons
Metals
Sputtering
2012
16 引用 (Scopus)
MIS (semiconductors)
passivity
capacitors
spectroscopy
traps
21 引用 (Scopus)

Fabrication of TiN/Ge contact with extremely low electron barrier height

Yamamoto, K., Harada, K., Yang, H., Wang, D. & Nakashima, H., 7 1 2012, : : Japanese journal of applied physics. 51, 7 PART 1, 070208.

研究成果: ジャーナルへの寄稿記事

Leakage currents
Fabrication
fabrication
Electrons
Surface states
3 引用 (Scopus)

Gate stack and source/drain junction formations for high-mobility Ge MOSFETs

Nakashima, H., Yamamoto, K., Yang, H. & Wang, D., 12 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 版 巻 50. p. 205-216 12 p.

研究成果: 著書/レポートタイプへの貢献会議での発言

Thermal diffusion
Carrier mobility
Passivation
Ion implantation
Fabrication
16 引用 (Scopus)

Schottky source/drain Ge metal-oxide-semiconductor field-effect transistors with directly contacted TiN/Ge and HfGe/Ge structures

Yamamoto, K., Yamanaka, T., Harada, K., Sada, T., Sakamoto, K., Kojima, S., Yang, H., Wang, D. & Nakashima, H., 5 1 2012, : : Applied Physics Express. 5, 5, 051301.

研究成果: ジャーナルへの寄稿記事

MOSFET devices
metal oxide semiconductors
field effect transistors
Sputter deposition
MOS devices
8 引用 (Scopus)

Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors

Yamamoto, K., Yamanaka, T., Ueno, R., Hirayama, K., Yang, H., Wang, D. & Nakashima, H., 2 1 2012, : : Thin Solid Films. 520, 8, p. 3382-3386 5 p.

研究成果: ジャーナルへの寄稿記事

MOSFET devices
metal oxide semiconductors
field effect transistors
Leakage currents
Fabrication
2011

Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., 7 1 2011, China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 版 p. 1117-1122 6 p. (ECS Transactions; 巻数 34, 番号 1).

研究成果: 著書/レポートタイプへの貢献会議での発言

Photoluminescence
Strain relaxation
Defects
Annealing
Electron cyclotron resonance

Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., 11 22 2011, : : Journal of the Electrochemical Society. 158, 12, p. H1221-H1224

研究成果: ジャーナルへの寄稿記事

Strain relaxation
Photoluminescence
insulators
photoluminescence
Defects
30 引用 (Scopus)
MOSFET devices
Passivation
metal oxide semiconductors
passivity
field effect transistors
42 引用 (Scopus)

Ohmic contact formation on n-type Ge by direct deposition of TiN

Iyota, M., Yamamoto, K., Wang, D., Yang, H. & Nakashima, H., 5 9 2011, : : Applied Physics Letters. 98, 19, 192108.

研究成果: ジャーナルへの寄稿記事

electric contacts
annealing
p-n junctions
interlayers
temperature
18 引用 (Scopus)

Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation

Nakashima, H., Iwamura, Y., Sakamoto, K., Wang, D., Hirayama, K., Yamamoto, K. & Yang, H., 6 20 2011, : : Applied Physics Letters. 98, 25, 252102.

研究成果: ジャーナルへの寄稿記事

metal oxide semiconductors
passivity
capacitors
annealing
nitrogen atoms
2008
9 引用 (Scopus)

Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal

Sugimoto, Y., Kajiwara, M., Yamamoto, K., Suehiro, Y., Wang, D. & Nakashima, H., 11 3 2008, : : Thin Solid Films. 517, 1, p. 204-206 3 p.

研究成果: ジャーナルへの寄稿記事

Metallizing
Wet etching
Oxides
Structural properties
Electric properties
3 引用 (Scopus)
Gate dielectrics
Oxides
Annealing
Plasmas
Oxidation
1 引用 (Scopus)

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure

Nakashima, H., Sugimoto, Y., Suehiro, Y., Yamamoto, K., Kajiwara, M., Hirayama, K. & Wang, D., 12 1 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 780-783 4 p. 4734660. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

研究成果: 著書/レポートタイプへの貢献会議での発言

Gate dielectrics
Oxides
Annealing
Plasmas
Fabrication
38 引用 (Scopus)

Low-temperature molecular beam epitaxy of a ferromagnetic full-Heusler alloy Fe2MnSi on Ge(111)

Ueda, K., Hamaya, K., Yamamoto, K., Ando, Y., Sadoh, T., Maeda, Y. & Miyao, M., 9 29 2008, : : Applied Physics Letters. 93, 11, 112108.

研究成果: ジャーナルへの寄稿記事

molecular beam epitaxy
Curie temperature
saturation
magnetization
temperature
2007
24 引用 (Scopus)

Effective work function modulation of TaN metal gate on Hf O2 after postmetallization annealing

Sugimoto, Y., Kajiwara, M., Yamamoto, K., Suehiro, Y., Wang, D. & Nakashima, H., 9 21 2007, : : Applied Physics Letters. 91, 11, 112105.

研究成果: ジャーナルへの寄稿記事

modulation
annealing
metals
x ray spectroscopy
photoelectron spectroscopy
7 引用 (Scopus)
Wet etching
Structural properties
Masks
Electric properties
masks
2006
5 引用 (Scopus)
Dielectric films
Gate dielectrics
Annealing
Plasmas
Oxidation