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研究成果 2006 2019

  • 397 引用
  • 13 h指数
  • 39 記事
  • 8 会議での発言
  • 1 Conference article
フィルター
会議での発言
2019

Border-trap characterization for Ge gate stacks using deep-level transient spectroscopy

Nakashima, H., Wen, W. C., Yamamoto, K. & Wang, D., 1 1 2019, Semiconductor Process Integration 11. Murota, J., Claeys, C., Iwai, H., Tao, M., Deleonibus, S., Mai, A., Shiojima, K. & Cao, Y. (版). 4 版 Electrochemical Society Inc., p. 3-10 8 p. (ECS Transactions; 巻数 92, 番号 4).

研究成果: 著書/レポートタイプへの貢献会議での発言

Deep level transient spectroscopy
Capacitors
Valence bands
Conduction bands
Metals
2017
1 引用 (Scopus)

Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer

Nakashima, H., Okamoto, H., Yamamoto, K. & Wang, D., 1 1 2017, ECS Transactions. Shiojima, K., Mai, A., Murota, J., Chin, P., Claeys, C. L., Iwai, H., Deleonibus, S. & Tao, M. (版). 4 版 Electrochemical Society Inc., p. 97-106 10 p. (ECS Transactions; 巻数 80, 番号 4).

研究成果: 著書/レポートタイプへの貢献会議での発言

Metals
Sputter deposition
Metallizing
Fermi level
Electric properties
2015

Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices

Nakashima, H., Yamamoto, K. & Wang, D., 1 1 2015, ULSI Process Integration 9. Murota, J., Claeys, C., Deleonibus, S., Tao, M. & Iwai, H. (版). 10 版 Electrochemical Society Inc., p. 55-66 12 p. (ECS Transactions; 巻数 69, 番号 10).

研究成果: 著書/レポートタイプへの貢献会議での発言

Nitrides
Optoelectronic devices
Electric properties
Carrier mobility
Light emission
2014

Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure

Wang, D., Kamezawa, S., Yamamoto, K. & Nakashima, H., 1 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 109-110 2 p. 6874642. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

研究成果: 著書/レポートタイプへの貢献会議での発言

Electroluminescence
Germanium
Energy gap
Metals
Temperature

Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

Yamamoto, K., Wang, D. & Nakashima, H., 1 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 91-92 2 p. 6874625. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

研究成果: 著書/レポートタイプへの貢献会議での発言

Fermi level
Nitrides
Metals
2012
3 引用 (Scopus)

Gate stack and source/drain junction formations for high-mobility Ge MOSFETs

Nakashima, H., Yamamoto, K., Yang, H. & Wang, D., 12 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 版 巻 50. p. 205-216 12 p.

研究成果: 著書/レポートタイプへの貢献会議での発言

Thermal diffusion
Carrier mobility
Passivation
Ion implantation
Fabrication
2011

Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., 7 1 2011, China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 版 p. 1117-1122 6 p. (ECS Transactions; 巻数 34, 番号 1).

研究成果: 著書/レポートタイプへの貢献会議での発言

Photoluminescence
Strain relaxation
Defects
Annealing
Electron cyclotron resonance
2008
1 引用 (Scopus)

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure

Nakashima, H., Sugimoto, Y., Suehiro, Y., Yamamoto, K., Kajiwara, M., Hirayama, K. & Wang, D., 12 1 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 780-783 4 p. 4734660. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

研究成果: 著書/レポートタイプへの貢献会議での発言

Gate dielectrics
Oxides
Annealing
Plasmas
Fabrication