年単位の研究成果
Fingerprint Taizoh Sadohが取り組む研究トピックをご確認ください。これらのトピックラベルは、この人物の研究に基づいています。これらを共に使用することで、固有の認識が可能になります。
- 10 同様のプロファイル
Crystallization
Engineering & Materials Science
crystallization
Physics & Astronomy
insulators
Physics & Astronomy
Annealing
Engineering & Materials Science
Substrates
Engineering & Materials Science
Temperature
Engineering & Materials Science
Melting
Engineering & Materials Science
solid phases
Physics & Astronomy
ネットワーク
最近の共同研究。丸をクリックして詳細を確認しましょう。
研究成果 1991 2019
High mobility sputtered InSb film by blue laser diode annealing
Koswaththage, C. J., Higashizako, T., Okada, T., Sadoh, T., Furuta, M., Bae, B. S. & Noguchi, T., 4 1 2019, ： : AIP Advances. 9, 4, 045009.研究成果: ジャーナルへの寄稿 › 記事
公開
semiconductor lasers
annealing
glass
melting points
radiant flux density
Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication
Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T. & Ikenoue, H., 1 1 2019, Laser-Based Micro- and Nanoprocessing XIII. Klotzbach, U., Watanabe, A. & Kling, R. (版). SPIE, 109060J. (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 10906).研究成果: 著書/レポートタイプへの貢献 › 会議での発言
Semiconductor doping
Fluorine Compounds
Silicon Compounds
Fluorine compounds
fluorine compounds
Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication
Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T. & Ikenoue, H., 8 15 2018, AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 8437343. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).研究成果: 著書/レポートタイプへの貢献 › 会議での発言
phosphoric acid
Phosphoric acid
Excimer lasers
Thin film transistors
Polysilicon
Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s)
Xu, C., Gao, H., Sugino, T., Miyao, M. & Sadoh, T., 6 11 2018, ： : Applied Physics Letters. 112, 24, 242103.研究成果: ジャーナルへの寄稿 › 記事
carrier mobility
solid phases
insulators
nucleation
crystallization
Retraction: Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s) (Applied Physics Letters (2018) 112 (242103) DOI: 10.1063/1.5024307)
Xu, C., Gao, H., Sugino, T., Miyao, M. & Sadoh, T., 7 9 2018, ： : Applied Physics Letters. 113, 2, 029901.研究成果: ジャーナルへの寄稿 › コメント/討論
carrier mobility
solid phases
insulators
nucleation
crystallization