• 2895 引用
  • 29 h指数
1991 …2020

Research output per year

Pureに変更を加えた場合、すぐここに表示されます。

研究成果

フィルター
記事
2020

Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

Imokawa, K., Kurashige, T., Suwa, A., Nakamura, D., Sadoh, T., Goto, T. & Ikenoue, H., 1 1 2020, : : IEEE Journal of the Electron Devices Society. 8, p. 27-32 6 p., 8918252.

研究成果: ジャーナルへの寄稿記事

公開
2019
公開
1 引用 (Scopus)

High mobility sputtered InSb film by blue laser diode annealing

Koswaththage, C. J., Higashizako, T., Okada, T., Sadoh, T., Furuta, M., Bae, B. S. & Noguchi, T., 4 1 2019, : : AIP Advances. 9, 4, 045009.

研究成果: ジャーナルへの寄稿記事

公開
公開
2018

Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s)

Xu, C., Gao, H., Sugino, T., Miyao, M. & Sadoh, T., 6 11 2018, : : Applied Physics Letters. 112, 24, 242103.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)
2017

Large single-crystal Ge-on-insulator by thermally-assisted (~400 °C) Si-seeded-pulse-laser annealing

Sadoh, T., Kurosawa, M., Heya, A., Matsuo, N. & Miyao, M., 11 1 2017, : : Materials Science in Semiconductor Processing. 70, p. 8-11 4 p.

研究成果: ジャーナルへの寄稿記事

Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼ 10%) GeSn on insulator enhanced by weak laser irradiation

Moto, K., Sugino, T., Matsumura, R., Ikenoue, H., Miyao, M. & Sadoh, T., 7 1 2017, : : AIP Advances. 7, 7, 075204.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)
2016

Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure

Morshed, T., Kai, Y., Matsumura, R., Park, J. H., Chikita, H., Sadoh, T. & Hashim, A. M., 4 1 2016, : : Materials Letters. 168, p. 223-227 5 p.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

Formation of large-grain crystalline germanium on single layer graphene on insulator by rapid melting growth

Morshed, T., Kai, Y., Matsumura, R., Park, J. H., Chikita, H., Sadoh, T. & Hashim, A. M., 9 1 2016, : : Materials Letters. 178, p. 147-150 4 p.

研究成果: ジャーナルへの寄稿記事

High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

Sadoh, T., Kai, Y., Matsumura, R., Moto, K. & Miyao, M., 12 5 2016, : : Applied Physics Letters. 109, 23, 232106.

研究成果: ジャーナルへの寄稿記事

20 引用 (Scopus)

High Sn-concentration (~ 8%) GeSn by low-temperature (~ 150 °c) solid-phase epitaxy of a-GeSn/c-Ge

Sadoh, T., Ooato, A., Park, J. H. & Miyao, M., 3 1 2016, : : Thin Solid Films. 602, p. 20-23 4 p.

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

Low-temperature (≤ 300 °c) formation of orientation-controlled large-grain (≥ 10 μm) Ge-rich SiGe on insulator by gold-induced crystallization

Sadoh, T., Park, J. H., Aoki, R. & Miyao, M., 3 1 2016, : : Thin Solid Films. 602, p. 3-6 4 p.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)
3 引用 (Scopus)

Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

Moto, K., Matsumura, R., Sadoh, T., Ikenoue, H. & Miyao, M., 6 27 2016, : : Applied Physics Letters. 108, 26, 262105.

研究成果: ジャーナルへの寄稿記事

9 引用 (Scopus)

Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Sadoh, T., Park, J. H., Aoki, R. & Miyao, M., 3 1 2016, : : Japanese Journal of Applied Physics. 55, 3, 03CB01.

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

Seeding effects of Sn/a-Ge island structures for low-temperature lateral-growth of a-GeSn on insulator

Kai, Y., Chikita, H., Matsumura, R., Sadoh, T. & Miyao, M., 1 1 2016, : : ECS Journal of Solid State Science and Technology. 5, 2, p. P76-P79

研究成果: ジャーナルへの寄稿記事

2015

High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region

Matsumura, R., Kai, Y., Chikita, H., Sadoh, T. & Miyao, M., 6 1 2015, : : AIP Advances. 5, 6, 067112.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

Low-temperature (∼180°C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

Matsumura, R., Chikita, H., Kai, Y., Sadoh, T., Ikenoue, H. & Miyao, M., 12 28 2015, : : Applied Physics Letters. 107, 26, 262106.

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

Thickness dependent solid-phase crystallization of amorphous GeSn on insulating substrates at low temperatures (≤250°C)

Matsumura, R., Sasaki, M., Chikita, H., Sadoh, T. & Miyao, M., 1 1 2015, : : ECS Solid State Letters. 4, 12, p. P95-P97

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

Sadoh, T., Chikita, H., Matsumura, R. & Miyao, M., 8 20 2015, : : Journal of Applied Physics. 118, 9, 095707.

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)
2014
22 引用 (Scopus)

Coherent lateral-growth of Ge over insulating film by rapid-melting- crystallization

Sadoh, T., Kurosawa, M., Toko, K. & Miyao, M., 4 30 2014, : : Thin Solid Films. 557, p. 135-138 4 p.

研究成果: ジャーナルへの寄稿記事

Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO 2 substrates

Kurosawa, M., Sadoh, T. & Miyao, M., 1 1 2014, : : Journal of Applied Physics. 116, 17, 173510.

研究成果: ジャーナルへの寄稿記事

34 引用 (Scopus)

Dynamic analysis of rapid-melting growth using SiGe on insulator

Matsumura, R., Tojo, Y., Kurosawa, M., Sadoh, T. & Miyao, M., 4 30 2014, : : Thin Solid Films. 557, p. 125-128 4 p.

研究成果: ジャーナルへの寄稿記事

Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region

Matsumura, R., Kato, R., Tojo, Y., Kurosawa, M., Sadoh, T. & Miyao, M., 1 1 2014, : : ECS Solid State Letters. 3, 5, p. P61-P64

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

High carrier mobility in orientation-controlled large-grain (>50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

Park, J. H., Kasahara, K., Hamaya, K., Miyao, M. & Sadoh, T., 6 23 2014, : : Applied Physics Letters. 104, 25, 252110.

研究成果: ジャーナルへの寄稿記事

46 引用 (Scopus)

In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth

Chikita, H., Matsumura, R., Tojo, Y., Yokoyama, H., Sadoh, T. & Miyao, M., 4 30 2014, : : Thin Solid Films. 557, p. 139-142 4 p.

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

Matsumura, R., Kato, R., Sadoh, T. & Miyao, M., 9 8 2014, : : Applied Physics Letters. 105, 10, 102106.

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

Self-organized travelling-zone-melting growth of a-Ge/Sn/c-Ge stacked-structures for high-quality GeSn

Matsumura, R., Kinoshita, Y., Tojo, Y., Sadoh, T., Nishimura, T. & Miyao, M., 2014, : : ECS Journal of Solid State Science and Technology. 3, 10, p. P340-P343

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator

Ooato, A., Suzuki, T., Park, J. H., Miyao, M. & Sadoh, T., 4 30 2014, : : Thin Solid Films. 557, p. 155-158 4 p.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100)

Abidin, M. S. Z., Morshed, T., Chikita, H., Kinoshita, Y., Muta, S., Anisuzzaman, M., Park, J. H., Matsumura, R., Mahmood, M. R., Sadoh, T. & Hashim, A. M., 3 6 2014, : : Materials. 7, 2, p. 1409-1421 13 p.

研究成果: ジャーナルへの寄稿記事

4 引用 (Scopus)

Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding

Chikita, H., Matsumura, R., Kai, Y., Sadoh, T. & Miyao, M., 11 17 2014, : : Applied Physics Letters. 105, 20, 202112.

研究成果: ジャーナルへの寄稿記事

25 引用 (Scopus)
2013

Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization

Kurosawa, M., Toko, K., Sadoh, T., Mizushim, I. & Miyao, M., 11 18 2013, : : ECS Journal of Solid State Science and Technology. 2, 3

研究成果: ジャーナルへの寄稿記事

4 引用 (Scopus)

Crystallization of electrodeposited germanium thin film on silicon (100)

Abidin, M. S. Z., Matsumura, R., Anisuzzaman, M., Park, J. H., Muta, S., Mahmood, M. R., Sadoh, T. & Hashim, A. M., 12 5 2013, : : Materials. 6, 11, p. 5047-5057 11 p.

研究成果: ジャーナルへの寄稿記事

11 引用 (Scopus)

High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth

Tojo, Y., Matsumura, R., Yokoyama, H., Kurosawa, M., Toko, K., Sadoh, T. & Miyao, M., 3 4 2013, : : Applied Physics Letters. 102, 9, 092102.

研究成果: ジャーナルへの寄稿記事

14 引用 (Scopus)

High-quality hybrid-GeSn/Ge stacked-structures by low-temperature Sn induced-melting growth

Kinoshita, Y., Matsumura, R., Sadoh, T., Nishimura, T. & Miyao, M., 1 1 2013, : : ECS Transactions. 58, 9, p. 179-184 6 p.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

Laterally-graded doping into ge-on-insulator by combination of ion-implantation and rapid-melting growth

Matsumura, R., Anisuzzaman, M., Yokoyama, H., Sadoh, T. & Miyao, M., 7 26 2013, : : ECS Solid State Letters. 2, 7

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

Liquid-solid coexisting annealing of a-GeSn/Si(100) structure for low temperature epitaxial growth of SiGe

Chikita, H., Matsumura, R., Sadoh, T. & Miyao, M., 1 1 2013, : : ECS Transactions. 58, 9, p. 257-262 6 p.

研究成果: ジャーナルへの寄稿記事

Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

Heya, A., Kanda, K., Toko, K., Sadoh, T., Amano, S., Matsuo, N., Miyamoto, S., Miyao, M. & Mochizuki, T., 5 1 2013, : : Thin Solid Films. 534, p. 334-340 7 p.

研究成果: ジャーナルへの寄稿記事

12 引用 (Scopus)

Low-temperature metal-induced crystallization of orientation-controlled SiGe on insulator for flexible electronics

Sadoh, T., Park, J. H., Kurosawa, M. & Miyao, M., 1 1 2013, : : ECS Transactions. 58, 9, p. 213-221 9 p.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °c)

Park, J. H., Suzuki, T., Kurosawa, M., Miyao, M. & Sadoh, T., 8 19 2013, : : Applied Physics Letters. 103, 8, 082102.

研究成果: ジャーナルへの寄稿記事

57 引用 (Scopus)

Orientation-control of ge-stripes-on-insulator by narrowing in rapid-melting growth from SI(111) seed

Anisuzzaman, M., Muta, S., Takahashi, M., Hashim, A. M. & Sadoh, T., 7 26 2013, : : ECS Solid State Letters. 2, 9, p. P76-P78

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)
2012

Effects of dose on activation characteristics of P in Ge

Anisuzzaman, M. & Sadoh, T., 2 1 2012, : : Thin Solid Films. 520, 8, p. 3255-3258 4 p.

研究成果: ジャーナルへの寄稿記事

Enhanced interfacial-nucleation in al-induced crystallization for (111) Oriented Si1-xGex (0 ≤ x ≤ 1) films on insulating substrates

Kurosawa, M., Kawabata, N., Sadoh, T. & Miyao, M., 12 1 2012, : : ECS Journal of Solid State Science and Technology. 1, 3, p. P144-P147

研究成果: ジャーナルへの寄稿記事

48 引用 (Scopus)

Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures

Sadoh, T., Kurosawa, M., Heya, A., Matsuo, N. & Miyao, M., 2 1 2012, : : Thin Solid Films. 520, 8, p. 3276-3278 3 p.

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

Epitaxial-template structure utilizing Ge-on-insulator stripe arrays with nanospacing for advanced heterogeneous integration on Si platform

Hashim, A. M., Anisuzzaman, M., Muta, S., Sadoh, T. & Miyao, M., 6 1 2012, : : Japanese journal of applied physics. 51, 6 PART 2, 06FF04.

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth

Matsumura, R., Tojo, Y., Kurosawa, M., Sadoh, T., Mizushima, I. & Miyao, M., 12 10 2012, : : Applied Physics Letters. 101, 24, 241904.

研究成果: ジャーナルへの寄稿記事

24 引用 (Scopus)

Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth

Kurosawa, M., Kawabata, N., Sadoh, T. & Miyao, M., 4 23 2012, : : Applied Physics Letters. 100, 17, 172107.

研究成果: ジャーナルへの寄稿記事

28 引用 (Scopus)