Pureに変更を加えた場合、すぐここに表示されます。

研究成果 1993 2019

3 引用 (Scopus)

Graphene nanoribbons grown on epitaxial SixCyOz layer on Vicinal SiC(0001) surfaces by chemical vapor deposition

Hagihara, Y., Kajiwara, T., Visikovskiy, A. & Tanaka, S., 5 1 2013, : : Applied Physics Express. 6, 5, 055102.

研究成果: ジャーナルへの寄稿記事

Nanoribbons
Epitaxial layers
Graphene
Chemical vapor deposition
graphene
16 引用 (Scopus)

Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy

Kajiwara, T., Nakamori, Y., Visikovskiy, A., Iimori, T., Komori, F., Nakatsuji, K., Mase, K. & Tanaka, S., 3 21 2013, : : Physical Review B - Condensed Matter and Materials Physics. 87, 12, 121407.

研究成果: ジャーナルへの寄稿記事

Nanoribbons
Carbon Nanotubes
Graphite
Molecular beam epitaxy
Graphene
3 引用 (Scopus)

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Kern, R. S., Järrendahl, K., Tanaka, S. & Davis, R. F., 8 1 1997, : : Diamond and Related Materials. 6, 10, p. 1282-1288 7 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Doping (additives)
Substrates
38 引用 (Scopus)

Growth and luminescence properties of self-organized ZnSe quantum dots

Tawara, T., Satoru, T., Kumano, H. & Suemune, I., 7 12 1999, : : Applied Physics Letters. 75, 2, p. 235-237 3 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
luminescence
zinc
atomic force microscopy
photoluminescence
2 引用 (Scopus)

Growth mechanisms of GaN quantum dots and their optical properties

Satoru, T., Ramvall, P., Nomura, S., Hirayama, H. & Aoyagi, Y., 1 1 1998, : : Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi). 81, 6, p. 20-26 7 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Optical pumping
3 引用 (Scopus)

Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., 2 1 1997, : : Solid-State Electronics. 41, 2 SPEC. ISS., p. 129-134 6 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Molecular beam epitaxy
vapor phase epitaxy
9 引用 (Scopus)

Growth of AlN-SiC solid solutions by sequential supply epitaxy

Avramescu, A., Hirayama, H., Aoyagi, Y. & Tanaka, S., 1 1 2002, : : Journal of Crystal Growth. 234, 2-3, p. 435-439 5 p.

研究成果: ジャーナルへの寄稿記事

Epitaxial growth
epitaxy
Solid solutions
solid solutions
Electron spectroscopy
17 引用 (Scopus)

Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization

Davis, R. F., Satoru, T., Rowland, L. B., Kern, R. S., Sitar, Z., Ailey, S. K. & Wang, C., 1 1 1996, : : Journal of Crystal Growth. 164, 1-4, p. 132-142 11 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Aluminum nitride
Silicon carbide
Nitrides
silicon carbides
3 引用 (Scopus)

Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC

Endo, A., Komori, F., Morita, K., Kajiwara, T. & Satoru, T., 5 1 2015, : : Journal of Low Temperature Physics. 179, 3-4, p. 237-250 14 p.

研究成果: ジャーナルへの寄稿記事

Quantum Hall effect
Graphite
Graphene
graphene
quantum Hall effect
3 引用 (Scopus)

High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3

Hwang, J. S., Tanaka, S., Iwai, S., Aoyagi, Y. & Seong, S., 4 1 1999, : : Journal of Crystal Growth. 200, 1-2, p. 63-69 7 p.

研究成果: ジャーナルへの寄稿記事

Gallium
Film growth
Buffer layers
gallium
buffers
5 引用 (Scopus)

High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

Dagher, R., Matta, S., Parret, R., Paillet, M., Jouault, B., Nguyen, L., Portail, M., Zielinski, M., Chassagne, T., Tanaka, S., Brault, J., Cordier, Y. & Michon, A., 4 1 2017, : : Physica Status Solidi (A) Applications and Materials Science. 214, 4, 1600436.

研究成果: ジャーナルへの寄稿記事

Graphite
Graphene
Chemical vapor deposition
graphene
templates
18 引用 (Scopus)

Homoepitaxial SiC growth by molecular beam epitaxy

Kern, R. S., Järrendahl, K., Tanaka, S. & Davis, R. F., 7 1997, : : Physica Status Solidi (B) Basic Research. 202, 1, p. 379-404 26 p.

研究成果: ジャーナルへの寄稿記事

Molecular beam epitaxy
molecular beam epitaxy
Epilayers
Substrates
Temperature
6 引用 (Scopus)

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

King, S. W., Satoru, T., Davis, R. F. & Nemanich, R. J., 9 1 2015, : : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 33, 5, 05E105.

研究成果: ジャーナルへの寄稿記事

Hydrofluoric Acid
hydrofluoric acid
hydrogen plasma
Silicon carbide
silicon carbides
5 引用 (Scopus)

II-VI quantum dots grown by MOVPE

Suemune, I., Yoshida, K., Kumano, H., Tawara, T., Ueta, A. & Tanaka, S., 2 2003, : : Journal of Crystal Growth. 248, p. 301-309 9 p.

研究成果: ジャーナルへの寄稿記事

Metallorganic vapor phase epitaxy
Semiconductor quantum dots
quantum dots
Microcavities
photon-electron interaction
5 引用 (Scopus)
Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Nitrogen
nitrogen

InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties

Hirayama, H., Tanaka, S., Ramvall, P. & Aoyagi, Y., 12 1 1997, : : Materials Research Society Symposium - Proceedings. 482, p. 737-742 6 p.

研究成果: ジャーナルへの寄稿Conference article

Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Photoluminescence
111 引用 (Scopus)

Initial stage of aluminum nitride film growth on 6H-silicon carbide< by plasma-assisted, gas-source molecular beam epitaxy

Satoru, T., Kern, R. S. & Davis, R. F., 12 1 1995, : : Applied Physics Letters. 1 p.

研究成果: ジャーナルへの寄稿記事

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
positioning
2 引用 (Scopus)

Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy

Davis, R. F., Ailey, K. S., Kern, R. S., Kester, D. J., Sitar, Z., Smith, L., Tanaka, S. & Wang, C., 12 1 1994, : : Materials Research Society Symposium - Proceedings. 339, p. 351-362 12 p.

研究成果: ジャーナルへの寄稿Conference article

Molecular beam epitaxy
Silicon carbide
Nitrides
silicon carbides
carbides
132 引用 (Scopus)

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hirayama, H., Tanaka, S., Ramvall, P. & Aoyagi, Y., 12 1 1998, : : Applied Physics Letters. 72, 14, p. 1736-1738 3 p.

研究成果: ジャーナルへの寄稿記事

assembling
quantum dots
photoluminescence
metalorganic chemical vapor deposition
indium

Intense terahertz-field-induced nonlinearity in graphene

Hafez, H., Al-Naib, I., Sharma, G., Morandotti, R., Satoru, T., Komori, F., Oguri, K., Hibino, H. & Ozaki, T., 12 1 2013, 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013. 6665850. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

研究成果: 著書/レポートタイプへの貢献会議での発言

Graphene
Electric fields
Photoexcitation
Monolayers
4 引用 (Scopus)

Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy

Shen, X. Q., Ramvall, P., Riblet, P., Aoyagi, Y., Hosi, K., Tanaka, S. & Suemune, I., 2 2000, : : Journal of Crystal Growth. 209, 2-3, p. 396-400 5 p.

研究成果: ジャーナルへの寄稿Conference article

Gas source molecular beam epitaxy
Electric properties
molecular beam epitaxy
Optical properties
electrical properties
23 引用 (Scopus)

Issues and examples regarding growth of AlN, GaN and AlxGa1-xN thin films via OMVPE and gas source MBE

Davis, R. F., Weeks, T. W., Bremser, M. D., Satoru, T., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., 1996, : : Unknown Journal. 395, p. 3-13 11 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Thin films
Molecular beam epitaxy
266 引用 (Scopus)

Laser-induced microexplosion confined in the bulk of a sapphire cystal: Evidence of multimegabar pressures

Juodkazis, S., Nishimura, K., Tanaka, S., Misawa, H., Gamaly, E. G., Luther-Davies, B., Hallo, L., Nicolai, P. & Tikhonchuk, V. T., 5 11 2006, : : Physical Review Letters. 96, 16, 166101.

研究成果: ジャーナルへの寄稿記事

sapphire
shock
pulses
conservation laws
elastic waves
1 引用 (Scopus)

Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

Brault, J., Tanaka, S., Sarigiannidou, E., Nakagawa, H., Rouvière, J. L., Feuillet, G. & Daudin, B., 12 1 2002, : : Physica Status Solidi (B) Basic Research. 234, 3, p. 939-942 4 p.

研究成果: ジャーナルへの寄稿記事

Spatial distribution
Semiconductor quantum dots
bunching
periodic variations
flat surfaces
22 引用 (Scopus)

Layer-by-layer growth of SiC at low temperatures

Sumakeris, J. J., Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., 3 25 1993, : : Thin Solid Films. 225, 1-2, p. 219-224 6 p.

研究成果: ジャーナルへの寄稿記事

Ellipsometry
ellipsometry
filaments
Transmission electron microscopy
transmission electron microscopy
22 引用 (Scopus)

Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

Brault, J., Tanaka, S., Sarigiannidou, E., Rouvière, J. L., Daudin, B., Feuillet, G. & Nakagawa, H., 3 1 2003, : : Journal of Applied Physics. 93, 5, p. 3108-3110 3 p.

研究成果: ジャーナルへの寄稿記事

alignment
quantum dots
spatial distribution
molecular beam epitaxy
atomic force microscopy
24 引用 (Scopus)

Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE

Tawara, T., Yoshida, H., Yogo, T., Satoru, T. & Suemune, I., 1 1 2000, : : Journal of Crystal Growth. 221, 1-4, p. 699-703 5 p.

研究成果: ジャーナルへの寄稿記事

Distributed Bragg reflectors
Metallorganic vapor phase epitaxy
Microcavities
Bragg reflectors
Vapor phase epitaxy
12 引用 (Scopus)
Aluminum nitride
aluminum nitrides
Microstructural evolution
Silicon carbide
silicon carbides
3 引用 (Scopus)

Modulation of Electron-Phonon Coupling in One-Dimensionally Nanorippled Graphene on a Macrofacet of 6H-SiC

Ienaga, K., Iimori, T., Yaji, K., Miyamachi, T., Nakashima, S., Takahashi, Y., Fukuma, K., Hayashi, S., Kajiwara, T., Visikovskiy, A., Mase, K., Nakatsuji, K., Tanaka, S. & Komori, F., 6 14 2017, : : Nano Letters. 17, 6, p. 3527-3532 6 p.

研究成果: ジャーナルへの寄稿記事

Graphite
Graphene
graphene
Modulation
modulation
10 引用 (Scopus)

MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast

Tawara, T., Suemune, I. & Tanaka, S., 1 1 2000, : : Journal of Crystal Growth. 214, p. 1019-1023 5 p.

研究成果: ジャーナルへの寄稿Conference article

Distributed Bragg reflectors
Metallorganic vapor phase epitaxy
Bragg reflectors
Refractive index
refractivity
2 引用 (Scopus)

Near K-edge absorption spectra of III-V nitrides

Fukui, K., Hirai, R., Yamamoto, A., Hirayama, H., Aoyagi, Y., Yamaguchi, S., Amano, H., Akasaki, I. & Satoru, T., 11 1 2001, : : Physica Status Solidi (B) Basic Research. 228, 2, p. 461-465 5 p.

研究成果: ジャーナルへの寄稿記事

Nitrides
nitrides
Absorption spectra
Synchrotron radiation
Aluminum
1 引用 (Scopus)

New Buffering Process in Preparation of Hiah Quality GaN Films

Hwang, J. S., Seong, S., Tanaka, S., Iwai, S., Aoyagi, Y. & Chong, P. J., 12 1 1997, : : Bulletin of the Korean Chemical Society. 18, 11, p. 1133-1135 3 p.

研究成果: ジャーナルへの寄稿記事

131 引用 (Scopus)

Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy

Ashrafi, A. B. M. A., Suemune, I., Kumano, H. & Satoru, T., 11 15 2002, : : Japanese Journal of Applied Physics, Part 2: Letters. 41, 11 B

研究成果: ジャーナルへの寄稿記事

Molecular beam epitaxy
Excitons
molecular beam epitaxy
Vapors
vapors
42 引用 (Scopus)

Nonlinear terahertz field-induced carrier dynamics in photoexcited epitaxial monolayer graphene

Hafez, H. A., Al-Naib, I., Dignam, M. M., Sekine, Y., Oguri, K., Blanchard, F., Cooke, D. G., Tanaka, S., Komori, F., Hibino, H. & Ozaki, T., 1 16 2015, : : Physical Review B - Condensed Matter and Materials Physics. 91, 3, 035422.

研究成果: ジャーナルへの寄稿記事

Graphite
Graphene
Monolayers
graphene
Pumps

Nonlinear terahertz-field-induced carrier dynamics in photoexcited graphene

Hafez, H. A., Al-Naib, I., Dignam, M. M., Sekine, Y., Oguri, K., Ibrahim, A., Satoru, T., Komori, F., Hibino, H. & Ozaki, T., 11 13 2014, 2014 39th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2014. IEEE Computer Society, 6956170. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

研究成果: 著書/レポートタイプへの貢献会議での発言

Graphene
Electric fields
Pumps
20 引用 (Scopus)

Nonlinear transmission of an intense terahertz field through monolayer graphene

Hafez, H. A., Al-Naib, I., Oguri, K., Sekine, Y., Dignam, M. M., Ibrahim, A., Cooke, D. G., Tanaka, S., Komori, F., Hibino, H. & Ozaki, T., 11 1 2014, : : AIP Advances. 4, 11, 117118.

研究成果: ジャーナルへの寄稿記事

graphene
transient heating
augmentation
scattering
photoconductivity
49 引用 (Scopus)

Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces

Yamada, S., Kato, J. I., Tanaka, S., Suemune, I., Avramescu, A., Aoyagi, Y., Teraguchi, N. & Suzuki, A., 6 4 2001, : : Applied Physics Letters. 78, 23, p. 3612-3614 3 p.

研究成果: ジャーナルへの寄稿記事

nucleation
kinetics
coalescing
defects
diffusion length
1 引用 (Scopus)

Nucleation and growth mode of GaN on vicinal SiC surfaces

Ebihara, M., Tanaka, S. & Suemune, I., 4 13 2007, : : Japanese Journal of Applied Physics, Part 2: Letters. 46, 12-16, p. L348-L351

研究成果: ジャーナルへの寄稿記事

Nucleation
nucleation
Reflection high energy electron diffraction
Molecular beam epitaxy
high energy electrons
10 引用 (Scopus)

Nucleation stages of carbon nanotubes on SiC(0001) by surface decomposition

Hayashl, K., Mizuno, S., Satoru, T., Toyoda, H., Tochihara, H. & Suemune, I., 6 24 2005, : : Japanese Journal of Applied Physics, Part 2: Letters. 44, 24-27

研究成果: ジャーナルへの寄稿記事

Carbon nanotubes
Nucleation
carbon nanotubes
nucleation
Graphene
7 引用 (Scopus)

Numerical analysis on vacancy induced vibrational properties of graphene nanoribbons

Islam, M. S., Ushida, K., Tanaka, S. & Hashimoto, A., 7 26 2013, : : Computational Materials Science. 79, p. 356-361 6 p.

研究成果: ジャーナルへの寄稿記事

Nanoribbons
Carbon Nanotubes
Graphite
Graphene
Vacancy
5 引用 (Scopus)

Numerical experiments on phonon properties of isotope and vacancy-type disordered graphene

Islam, M. S., Ushida, K., Tanaka, S. & Hashimoto, A., 11 21 2013, : : Diamond and Related Materials. 40, p. 115-122 8 p.

研究成果: ジャーナルへの寄稿記事

Graphite
Isotopes
Graphene
Vacancies
graphene
115 引用 (Scopus)

Observation of confinement-dependent exciton binding energy of GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., 12 1 1998, : : Applied Physics Letters. 73, 8, p. 1104-1106 3 p.

研究成果: ジャーナルへの寄稿記事

binding energy
quantum dots
excitons
electronic levels
shift

On phonon confinement effects and free carrier concentration in GaN quantum dots

Kuball, M., Gleize, J., Tanaka, S. & Aoyagi, Y., 11 1 2001, : : Physica Status Solidi (B) Basic Research. 228, 1, p. 195-198 4 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
Carrier concentration
quantum dots
Surface-Active Agents
Raman scattering
20 引用 (Scopus)

Optical characterization of the "E2" deep level in GaN

Hacke, P., Ramvall, P., Satoru, T., Aoyagi, Y., Kuramata, A., Horino, K. & Munekata, H., 1 25 1999, : : Applied Physics Letters. 74, 4, p. 543-545 3 p.

研究成果: ジャーナルへの寄稿記事

photoionization
capacitance
activation energy
formulations
thresholds
81 引用 (Scopus)

Optical properties of GaN quantum dots

Ramvall, P., Riblet, P., Nomura, S., Aoyagi, Y. & Satoru, T., 4 15 2000, : : Journal of Applied Physics. 87, 8, p. 3883-3890 8 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
optical properties
photoluminescence
nonlinearity
vapor phase epitaxy
32 引用 (Scopus)

Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)

Fujii, M. & Satoru, T., 7 5 2007, : : Physical Review Letters. 99, 1, 016102.

研究成果: ジャーナルへの寄稿記事

periodic variations
bunching
surface energy
etching

Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers

Tawara, T., Satoru, T., Kumano, H. & Suemune, I., 1 1 2000, : : Journal of Electronic Materials. 29, 5, p. 515-519 5 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
quantum dots
standard deviation
Growth temperature
Surface potential
3 引用 (Scopus)

Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

Islam, M. S., Bhuiyan, A. G., Tanaka, S., Makino, T. & Hashimoto, A., 12 15 2014, : : Applied Physics Letters. 105, 24, 243103.

研究成果: ジャーナルへの寄稿記事

graphene
Raman spectra
spectroscopy
point defects
probes
6 引用 (Scopus)

Polarized microscopic laser Raman scattering spectroscopy for edge structure of epitaxial graphene and localized vibrational mode

Islam, M. S., Tamakawa, D., Tanaka, S., Makino, T. & Hashimoto, A., 10 2014, : : Carbon. 77, p. 1073-1081 9 p.

研究成果: ジャーナルへの寄稿記事

Graphite
Laser modes
Graphene
Raman scattering
Spectroscopy
4 引用 (Scopus)

Quantum dot formation and crystal growth using an atomic nano-mask

Aoyagi, Y., Tanaka, S., Hirayama, H. & Takeuchi, M., 1 1 2001, : : Physica E: Low-Dimensional Systems and Nanostructures. 11, 2-3, p. 89-93 5 p.

研究成果: ジャーナルへの寄稿記事

Crystallization
Crystal growth
Semiconductor quantum dots
Masks
crystal growth