Pureに変更を加えた場合、すぐここに表示されます。

研究成果 1993 2019

Conference article

Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE

Shen, X. Q., Tanaka, S., Iwai, S. & Aoyagi, Y., 12 1 1997, : : Materials Research Society Symposium - Proceedings. 482, p. 223-226 4 p.

研究成果: ジャーナルへの寄稿Conference article

Gas source molecular beam epitaxy
Reflection high energy electron diffraction
Surface reconstruction
high energy electrons
molecular beam epitaxy

Enhancement of surface decomposition using supersonic beam: Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 1 1 1999, : : Journal of Crystal Growth. 201, p. 402-406 5 p.

研究成果: ジャーナルへの寄稿Conference article

Gas source molecular beam epitaxy
Semiconductor quantum dots
molecular beam epitaxy
quantum dots
Decomposition
3 引用 (Scopus)

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Hirayama, H., Satoru, T. & Aoyagi, Y., 1 1 1999, : : Microelectronic Engineering. 47, 1, p. 251-253 3 p.

研究成果: ジャーナルへの寄稿Conference article

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
4 引用 (Scopus)

GaN quantum dots in AlxGa1-xN confined layer structures

Satoru, T., Hirayama, H., Iwai, S. & Aoyagi, Y., 1 1 1997, : : Materials Research Society Symposium - Proceedings. 449, p. 135-140 6 p.

研究成果: ジャーナルへの寄稿Conference article

Semiconductor quantum dots
quantum dots
Surface-Active Agents
Silanes
Surface active agents

InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties

Hirayama, H., Satoru, T., Ramvall, P. & Aoyagi, Y., 12 1 1997, : : Materials Research Society Symposium - Proceedings. 482, p. 737-742 6 p.

研究成果: ジャーナルへの寄稿Conference article

Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Photoluminescence
2 引用 (Scopus)

Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy

Davis, R. F., Ailey, K. S., Kern, R. S., Kester, D. J., Sitar, Z., Smith, L., Satoru, T. & Wang, C., 12 1 1994, : : Materials Research Society Symposium - Proceedings. 339, p. 351-362 12 p.

研究成果: ジャーナルへの寄稿Conference article

Molecular beam epitaxy
Silicon carbide
Nitrides
silicon carbides
carbides
4 引用 (Scopus)

Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy

Shen, X. Q., Ramvall, P., Riblet, P., Aoyagi, Y., Hosi, K., Satoru, T. & Suemune, I., 1 1 2000, : : Journal of Crystal Growth. 209, 2-3, p. 396-400 5 p.

研究成果: ジャーナルへの寄稿Conference article

Gas source molecular beam epitaxy
Electric properties
molecular beam epitaxy
Optical properties
electrical properties
10 引用 (Scopus)

MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast

Tawara, T., Suemune, I. & Satoru, T., 1 1 2000, : : Journal of Crystal Growth. 214, p. 1019-1023 5 p.

研究成果: ジャーナルへの寄稿Conference article

Distributed Bragg reflectors
Metallorganic vapor phase epitaxy
Bragg reflectors
Refractive index
refractivity
コメント/討論
6 引用 (Scopus)

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Hirayama, H., Satoru, T. & Aoyagi, Y., 1 1 1999, : : Microelectronic Engineering. 49, 3-4, p. 287-290 4 p.

研究成果: ジャーナルへの寄稿コメント/討論

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants

Graphene: Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC (Small 29/2016)

Yurtsever, A., Onoda, J., Iimori, T., Niki, K., Miyamachi, T., Abe, M., Mizuno, S., Satoru, T., Komori, F. & Sugimoto, Y., 8 3 2016, : : Small. 1 p.

研究成果: ジャーナルへの寄稿コメント/討論

Scanning probe microscopy
Graphite
Intercalation
Electronic properties
Structural properties
レター
41 引用 (Scopus)

A UV light-emitting diode incorporating GaN quantum dots

Satoru, T., Lee, J. S., Ramvall, P. & Okagawa, H., 8 1 2003, : : Japanese Journal of Applied Physics, Part 2: Letters. 42, 8 A

研究成果: ジャーナルへの寄稿レター

Ultraviolet radiation
Semiconductor quantum dots
Diodes
light emitting diodes
quantum dots
会議での発言

Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates

Kamoi, S., Hasuike, N., Kisoda, K., Harima, H., Morita, K., Satoru, T. & Hashimoto, A., 1 1 2010, Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, p. 611-614 4 p. (Materials Science Forum; 巻数 645-648).

研究成果: 著書/レポートタイプへの貢献会議での発言

Graphite
ultraviolet spectroscopy
Ultraviolet spectroscopy
Graphene
Raman spectroscopy

Effects of photoexcitation on intense terahertz field-induced nonlinearity in monolayer epitaxial graphene

Hafez, H. A., Al-Naib, I., Dignam, M. M., Sekine, Y., Oguri, K., Blanchard, F., Cooke, D. G., Tanaka, S., Komori, F., Hibino, H. & Ozaki, T., 8 10 2015, 2015 Conference on Lasers and Electro-Optics, CLEO 2015. Institute of Electrical and Electronics Engineers Inc., 7183651. (Conference on Lasers and Electro-Optics Europe - Technical Digest; 巻数 2015-August).

研究成果: 著書/レポートタイプへの貢献会議での発言

Graphite
Photoexcitation
photoexcitation
Graphene
Monolayers

Intense terahertz-field-induced nonlinearity in graphene

Hafez, H., Al-Naib, I., Sharma, G., Morandotti, R., Satoru, T., Komori, F., Oguri, K., Hibino, H. & Ozaki, T., 12 1 2013, 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013. 6665850. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

研究成果: 著書/レポートタイプへの貢献会議での発言

Graphene
Electric fields
Photoexcitation
Monolayers

Nonlinear terahertz-field-induced carrier dynamics in photoexcited graphene

Hafez, H. A., Al-Naib, I., Dignam, M. M., Sekine, Y., Oguri, K., Ibrahim, A., Satoru, T., Komori, F., Hibino, H. & Ozaki, T., 11 13 2014, 2014 39th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2014. IEEE Computer Society, 6956170. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

研究成果: 著書/レポートタイプへの貢献会議での発言

Graphene
Electric fields
Pumps
2 引用 (Scopus)

Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy

Shirasawa, T., Satoru, T., Muro, T., Tamenori, Y., Harada, Y., Tokushima, T., Kinoshita, T., Shin, S., Takahashi, T. & Tochihara, H., 3 17 2011, Advanced Material Science and Technology. p. 15-19 5 p. (Materials Science Forum; 巻数 675 677).

研究成果: 著書/レポートタイプへの貢献会議での発言

Core levels
oxynitrides
Silicon
Spectroscopy
shift

Temperature dependence of terahertz transmission through photoexcited graphene

Hafez, H. A., Al-Naib, I., Oguri, K., Sekine, Y., Ibrahim, A., Dignam, M. M., Morandotti, R., Satoru, T., Komori, F., Hibino, H. & Ozaki, T., 1 1 2014, CLEO: Science and Innovations, CLEO_SI 2014. Optical Society of American (OSA), (Optics InfoBase Conference Papers).

研究成果: 著書/レポートタイプへの貢献会議での発言

Graphene
graphene
temperature dependence
hysteresis
pumps

Temperature Dependence of Terahertz Transmission through Photoexcited Graphene

Hafez, H. A., Al-Naib, I., Oguri, K., Sekine, Y., Ibrahim, A., Dignam, M. M., Morandotti, R., Satoru, T., Komori, F., Hibino, H. & Ozaki, T., 1 1 2014, CLEO: Applications and Technology, CLEO_AT 2014. Optical Society of American (OSA)

研究成果: 著書/レポートタイプへの貢献会議での発言

Graphene
graphene
temperature dependence
hysteresis
pumps

Temperature Dependence of Terahertz Transmission through Photoexcited Graphene

Hafez, H. A., Al-Naib, I., Oguri, K., Sekine, Y., Ibrahim, A., Dignam, M. M., Morandotti, R., Satoru, T., Komori, F., Hibino, H. & Ozaki, T., 1 1 2014, CLEO: QELS_Fundamental Science, CLEO_QELS 2014. Optical Society of American (OSA)

研究成果: 著書/レポートタイプへの貢献会議での発言

Graphene
graphene
temperature dependence
hysteresis
pumps
6 引用 (Scopus)

Three-dimensional laser microfabrication of metals, semiconductors, and dielectrics

Juodkazis, S., Nishimura, K., Okuno, H., Tabuchi, Y., Matsuo, S., Tanaka, S. & Misawa, H., 11 26 2007, International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies. 67320B. (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 6732).

研究成果: 著書/レポートタイプへの貢献会議での発言

Microfabrication
Ripple
ripples
Semiconductors
Metals
記事
31 引用 (Scopus)

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., 12 1 1993, : : Applied Physics Letters. 62, 25, p. 3333-3335 3 p.

研究成果: ジャーナルへの寄稿記事

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
stacking fault energy
14 引用 (Scopus)

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Rowland, L. B., Satoru, T. & Davis, R. F., 1 1 1998, : : Journal of Materials Research. 13, 7, p. 1816-1822 7 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide
4 引用 (Scopus)

Analysis of vibrational properties of C-doped hexagonal boron nitride (h-BN)

Islam, M. S., Ushida, K., Tanaka, S., Makino, T. & Hashimoto, A., 11 1 2014, : : Computational Materials Science. 94, C, p. 225-233 9 p.

研究成果: ジャーナルへの寄稿記事

Nitrides
Boron nitride
Phonon
boron nitrides
Hexagon
87 引用 (Scopus)

Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces

Satoru, T., Morita, K. & Hibino, H., 1 6 2010, : : Physical Review B - Condensed Matter and Materials Physics. 81, 4, 041406.

研究成果: ジャーナルへの寄稿記事

Graphite
Graphene
graphene
Desorption
desorption
20 引用 (Scopus)

Anisotropic transport in graphene on SiC substrate with periodic nanofacets

Odaka, S., Miyazaki, H., Li, S. L., Kanda, A., Morita, K., Satoru, T., Miyata, Y., Kataura, H., Tsukagoshi, K. & Aoyagi, Y., 2 22 2010, : : Applied Physics Letters. 96, 6, 062111.

研究成果: ジャーナルへの寄稿記事

graphene
electron mobility
field effect transistors
transport properties
slopes
151 引用 (Scopus)

Anti-surfactant in III-nitride epitaxy - quantum dot formation and dislocation termination

Tanaka, S., Takeuchi, M. & Aoyagi, Y., 8 15 2000, : : Japanese Journal of Applied Physics, Part 2: Letters. 39, 8 B, p. L831-L834

研究成果: ジャーナルへの寄稿記事

Dislocations (crystals)
Epitaxial growth
Nitrides
epitaxy
Semiconductor quantum dots
2 引用 (Scopus)

Application of ζ-factor method to Ti-Al-Cr system in analytical electron microscopy

Satoru, T., Watanabe, M., Horita, Z. & Nemoto, M., 1 1 1998, : : Journal of Electron Microscopy. 47, 1, p. 9-15 7 p.

研究成果: ジャーナルへの寄稿記事

Microanalysis
Electron microscopy
electron microscopy
Electron Microscopy
Chemical analysis
2 引用 (Scopus)

A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC

Kamoi, S., Kisoda, K., Hasuike, N., Harima, H., Morita, K., Satoru, T., Hashimoto, A. & Hibino, H., 5 1 2012, : : Diamond and Related Materials. 25, p. 80-83 4 p.

研究成果: ジャーナルへの寄稿記事

Graphite
Epitaxial layers
Graphene
graphene
Imaging techniques
16 引用 (Scopus)

Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001)

Shirasawa, T., Hayashi, K., Yoshida, H., Mizuno, S., Satoru, T., Muro, T., Tamenori, Y., Harada, Y., Tokushima, T., Horikawa, Y., Kobayashi, E., Kinoshita, T., Shin, S., Takahashi, T., Ando, Y., Akagi, K., Tsuneyuki, S. & Tochihara, H., 6 1 2009, : : Physical Review B - Condensed Matter and Materials Physics. 79, 24, 241301.

研究成果: ジャーナルへの寄稿記事

oxynitrides
Silicon
silicon films
Energy gap
X rays
29 引用 (Scopus)

Cathodoluminescence spectroscopy and imaging of individual GaN dots

Petersson, A., Gustafsson, A., Samuelson, L., Satoru, T. & Aoyagi, Y., 6 7 1999, : : Applied Physics Letters. 74, 23, p. 3513-3515 3 p.

研究成果: ジャーナルへの寄稿記事

cathodoluminescence
luminescence
spectroscopy
scanning electron microscopy
positioning

Cathodoluminescence Studies of Spontaneously Formed Low-dimensional AlGaN Structures

Petersson, A., Gustafsson, A., Satoru, T., Aoyagi, Y. & Samuelson, L., 12 1 1999, : : Physica Scripta T. 79, p. 56-59 4 p.

研究成果: ジャーナルへの寄稿記事

AlGaN
cathodoluminescence
Luminescence
Scanning Electron Microscope
Photoluminescence
7 引用 (Scopus)

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

Brault, J., Bellet-Amalric, E., Tanaka, S., Enjalbert, F., Le Si Dang, D., Sarigiannidou, E., Rouviere, J. L., Feuillet, G. & Daudin, B., 11 1 2003, : : Physica Status Solidi (B) Basic Research. 240, 2, p. 314-317 4 p.

研究成果: ジャーナルへの寄稿記事

Molecular beam epitaxy
molecular beam epitaxy
Substrates
Atomic force microscopy
atomic force microscopy

Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence

Petersson, A., Tanaka, S., Aoyagi, Y. & Samuelson, L., 12 1 1998, : : Materials Science Forum. 264-268, PART 2, p. 1335-1338 4 p.

研究成果: ジャーナルへの寄稿記事

Cathodoluminescence
cathodoluminescence
Semiconductor quantum dots
quantum dots
Luminescence
4 引用 (Scopus)

Chemical beam epitaxy of GaN using triethylgallium and ammonia

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 6 1 1998, : : Journal of Crystal Growth. 188, 1-4, p. 86-91 6 p.

研究成果: ジャーナルへの寄稿記事

Chemical beam epitaxy
Ammonia
epitaxy
ammonia
Surface morphology
1 引用 (Scopus)

Coexistence of Two Types of Spin Splitting Originating from Different Symmetries

Yaji, K., Visikovskiy, A., Iimori, T., Kuroda, K., Hayashi, S., Kajiwara, T., Satoru, T., Komori, F. & Shin, S., 3 29 2019, : : Physical Review Letters. 122, 12, 126403.

研究成果: ジャーナルへの寄稿記事

symmetry
density distribution
inversions
periodic variations
textures
8 引用 (Scopus)

Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence

Petersson, A., Gustafsson, A., Samuelson, L., Satoru, T. & Aoyagi, Y., 12 1 2002, : : MRS Internet Journal of Nitride Semiconductor Research. 7

研究成果: ジャーナルへの寄稿記事

Cathodoluminescence
Epitaxial films
Substrates
Atomic force microscopy
Scanning electron microscopy
30 引用 (Scopus)

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., 9 27 1999, : : Applied Physics Letters. 75, 13, p. 1935-1937 3 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
excitons
cryogenic temperature
vapor phase epitaxy
phonons
35 引用 (Scopus)
Gas source molecular beam epitaxy
Aluminum nitride
aluminum nitrides
Epitaxial growth
Silicon carbide

Effect of 10B isotope and vacancy defects on the phonon modes of two-dimensional hexagonal boron nitride

Islam, M. S., Anindya, K. N., Bhuiyan, A. G., Tanaka, S., Makino, T. & Hashimoto, A., 2 2018, : : Japanese Journal of Applied Physics. 57, 2, 02CB04.

研究成果: ジャーナルへの寄稿記事

Boron nitride
boron nitrides
Vacancies
Isotopes
isotopes
12 引用 (Scopus)

Effect of boron and nitrogen doping with native point defects on the vibrational properties of graphene

Islam, M. S., Ushida, K., Tanaka, S., Makino, T. & Hashimoto, A., 11 1 2014, : : Computational Materials Science. 94, C, p. 35-43 9 p.

研究成果: ジャーナルへの寄稿記事

Point Defects
Boron
Graphite
Graphene
Point defects
30 引用 (Scopus)

Effect of indium doping on the transient optical properties of GaN films

Kumano, H., Hoshi, K. I., Tanaka, S., Suemune, I., Shen, X. Q., Riblet, P., Ramvall, P. & Aoyagi, Y., 11 8 1999, : : Applied Physics Letters. 75, 19, p. 2879-2881 3 p.

研究成果: ジャーナルへの寄稿記事

indium
optical properties
stimulated emission
spontaneous emission
excitation
9 引用 (Scopus)

Effect of vacancy defects on phonon properties of hydrogen passivated graphene nanoribbons

Islam, M. S., Tanaka, S. & Hashimoto, A., 1 1 2014, : : Carbon. 80, 1, p. 146-154 9 p.

研究成果: ジャーナルへの寄稿記事

Nanoribbons
Carbon Nanotubes
Graphite
Graphene
Vacancies
69 引用 (Scopus)

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

Tanaka, S., Kern, R. S. & Davis, R. F., 12 1 1994, : : Applied Physics Letters. 65, 22, p. 2851-2853 3 p.

研究成果: ジャーナルへの寄稿記事

silicon carbides
gas flow
molecular beam epitaxy
thin films
gases
7 引用 (Scopus)

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

Yurtsever, A., Onoda, J., Iimori, T., Niki, K., Miyamachi, T., Abe, M., Mizuno, S., Satoru, T., Komori, F. & Sugimoto, Y., 8 3 2016, : : Small. p. 3956-3966 11 p.

研究成果: ジャーナルへの寄稿記事

Graphite
Intercalation
Electronic properties
Graphene
Structural properties
47 引用 (Scopus)

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

Aboelfotoh, M. O., Kern, R. S., Satoru, T., Davis, R. F. & Harris, C. I., 11 4 1996, : : Applied Physics Letters. 69, 19, p. 2873-2875 3 p.

研究成果: ジャーナルへの寄稿記事

metals
wurtzite
molecular beam epitaxy
transmission electron microscopy
oxides
3 引用 (Scopus)

Electrical characteristics of surface-stoichiometry-controlled p-GaN schottky contacts

Shiojima, K., Takahashi, T., Kaneda, N., Mishima, T., Kajiwara, T. & Satoru, T., 1 1 2013, : : Japanese Journal of Applied Physics. 52, 1 PART2, 01AF05.

研究成果: ジャーナルへの寄稿記事

Stoichiometry
stoichiometry
Defects
defects
Cooling
10 引用 (Scopus)

Electron beam irradiation effect for solid C60 epitaxy on graphene

Hashimoto, A., Terasaki, H., Yamamoto, A. & Satoru, T., 2 1 2009, : : Diamond and Related Materials. 18, 2-3, p. 388-391 4 p.

研究成果: ジャーナルへの寄稿記事

Graphite
Epitaxial growth
epitaxy
Graphene
Electron beams
44 引用 (Scopus)

Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., 10 1993, : : Journal of Materials Research. 8, 9, p. 2310-2314 5 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Plasma Gases
Epitaxial growth
molecular beam epitaxy
Plasmas
39 引用 (Scopus)

Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface

Shirasawa, T., Hayashi, K., Mizuno, S., Satoru, T., Nakatsuji, K., Komori, F. & Tochihara, H., 3 30 2007, : : Physical Review Letters. 98, 13, 136105.

研究成果: ジャーナルへの寄稿記事

oxynitrides
silicon
silicon nitrides
silicates
electron diffraction

Erratum: Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy (Physical Review B (2013) 87 (121407(R)) DOI:10.1103/PhysRevB.87.121407)

Kajiwara, T., Nakamori, Y., Visikovskiy, A., Iimori, T., Komori, F., Nakatsuji, K., Mase, K. & Tanaka, S., 4 19 2013, : : Physical Review B - Condensed Matter and Materials Physics. 87, 15, 159907.

研究成果: ジャーナルへの寄稿記事