Pureに変更を加えた場合、すぐここに表示されます。

研究成果 1993 2019

2009
12 引用 (Scopus)

Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces

Hayashi, K., Morita, K., Mizuno, S., Tochihara, H. & Satoru, T., 2 1 2009, : : Surface Science. 603, 3, p. 566-570 5 p.

研究成果: ジャーナルへの寄稿記事

flat surfaces
Low energy electron diffraction
oxynitrides
bunching
Scanning tunneling microscopy
2008
6 引用 (Scopus)

van der Waals epitaxy of solid C60 on graphene sheet

Hashimoto, A., Iwao, K., Tanaka, S. & Yamamoto, A., 7 1 2008, : : Diamond and Related Materials. 17, 7-10, p. 1622-1624 3 p.

研究成果: ジャーナルへの寄稿記事

Graphite
Epitaxial growth
epitaxy
Graphene
graphene
2007
39 引用 (Scopus)

Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface

Shirasawa, T., Hayashi, K., Mizuno, S., Satoru, T., Nakatsuji, K., Komori, F. & Tochihara, H., 3 30 2007, : : Physical Review Letters. 98, 13, 136105.

研究成果: ジャーナルへの寄稿記事

oxynitrides
silicon
silicon nitrides
silicates
electron diffraction
1 引用 (Scopus)

Nucleation and growth mode of GaN on vicinal SiC surfaces

Ebihara, M., Tanaka, S. & Suemune, I., 4 13 2007, : : Japanese Journal of Applied Physics, Part 2: Letters. 46, 12-16, p. L348-L351

研究成果: ジャーナルへの寄稿記事

Nucleation
nucleation
Reflection high energy electron diffraction
Molecular beam epitaxy
high energy electrons
31 引用 (Scopus)

Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)

Fujii, M. & Satoru, T., 7 5 2007, : : Physical Review Letters. 99, 1, 016102.

研究成果: ジャーナルへの寄稿記事

periodic variations
bunching
surface energy
etching
6 引用 (Scopus)

Three-dimensional laser microfabrication of metals, semiconductors, and dielectrics

Juodkazis, S., Nishimura, K., Okuno, H., Tabuchi, Y., Matsuo, S., Tanaka, S. & Misawa, H., 11 26 2007, International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies. 67320B. (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 6732).

研究成果: 著書/レポートタイプへの貢献会議での発言

Microfabrication
Ripple
ripples
Semiconductors
Metals
2006
266 引用 (Scopus)

Laser-induced microexplosion confined in the bulk of a sapphire cystal: Evidence of multimegabar pressures

Juodkazis, S., Nishimura, K., Tanaka, S., Misawa, H., Gamaly, E. G., Luther-Davies, B., Hallo, L., Nicolai, P. & Tikhonchuk, V. T., 5 11 2006, : : Physical Review Letters. 96, 16, 166101.

研究成果: ジャーナルへの寄稿記事

sapphire
shock
pulses
conservation laws
elastic waves
2005
10 引用 (Scopus)

Nucleation stages of carbon nanotubes on SiC(0001) by surface decomposition

Hayashl, K., Mizuno, S., Satoru, T., Toyoda, H., Tochihara, H. & Suemune, I., 6 24 2005, : : Japanese Journal of Applied Physics, Part 2: Letters. 44, 24-27

研究成果: ジャーナルへの寄稿記事

Carbon nanotubes
Nucleation
carbon nanotubes
nucleation
Graphene
2004
1 引用 (Scopus)

SiC surface nanostructures induced by self-ordering of nano-facets

Satoru, T., Nakagawa, H. & Suemune, I., 2004, : : Materials Science Forum. 457-460, I, p. 407-410 4 p.

研究成果: ジャーナルへの寄稿記事

flat surfaces
Nanostructures
High resolution transmission electron microscopy
Phase separation
Free energy
2003
41 引用 (Scopus)

A UV light-emitting diode incorporating GaN quantum dots

Satoru, T., Lee, J. S., Ramvall, P. & Okagawa, H., 8 1 2003, : : Japanese Journal of Applied Physics, Part 2: Letters. 42, 8 A

研究成果: ジャーナルへの寄稿レター

Ultraviolet radiation
Semiconductor quantum dots
Diodes
light emitting diodes
quantum dots
7 引用 (Scopus)

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

Brault, J., Bellet-Amalric, E., Tanaka, S., Enjalbert, F., Le Si Dang, D., Sarigiannidou, E., Rouviere, J. L., Feuillet, G. & Daudin, B., 11 1 2003, : : Physica Status Solidi (B) Basic Research. 240, 2, p. 314-317 4 p.

研究成果: ジャーナルへの寄稿記事

Molecular beam epitaxy
molecular beam epitaxy
Substrates
Atomic force microscopy
atomic force microscopy
1 引用 (Scopus)

GaN quantum dot UV light emitting diode

Lee, J. S., Satoru, T., Ramvall, P. & Okagawa, H., 2003, : : Materials Research Society Symposium - Proceedings. 798, p. 11-16 6 p.

研究成果: ジャーナルへの寄稿記事

Ultraviolet radiation
Semiconductor quantum dots
Diodes
light emitting diodes
quantum dots
5 引用 (Scopus)

II-VI quantum dots grown by MOVPE

Suemune, I., Yoshida, K., Kumano, H., Tawara, T., Ueta, A. & Satoru, T., 1 1 2003, : : Journal of Crystal Growth. 248, p. 301-309 9 p.

研究成果: ジャーナルへの寄稿記事

Metallorganic vapor phase epitaxy
Semiconductor quantum dots
quantum dots
Microcavities
photon-electron interaction
22 引用 (Scopus)

Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

Brault, J., Tanaka, S., Sarigiannidou, E., Rouvière, J. L., Daudin, B., Feuillet, G. & Nakagawa, H., 3 1 2003, : : Journal of Applied Physics. 93, 5, p. 3108-3110 3 p.

研究成果: ジャーナルへの寄稿記事

alignment
quantum dots
spatial distribution
molecular beam epitaxy
atomic force microscopy
14 引用 (Scopus)
Vapor phase epitaxy
Sapphire
sapphire
wafers
vapor phases
79 引用 (Scopus)

Self-ordering of nanofacets on vicinal sic surfaces

Nakagawa, H., Tanaka, S. & Suemune, I., 1 1 2003, : : Physical Review Letters. 91, 22

研究成果: ジャーナルへの寄稿記事

etching
control surfaces
flat surfaces
free energy
atomic force microscopy
9 引用 (Scopus)

Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

Kato, J. I., Tanaka, S., Yamada, S. & Suemune, I., 8 25 2003, : : Applied Physics Letters. 83, 8, p. 1569-1571 3 p.

研究成果: ジャーナルへの寄稿記事

gallium nitrides
silicon carbides
molecular beam epitaxy
anisotropy
coalescing
2002
8 引用 (Scopus)

Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence

Petersson, A., Gustafsson, A., Samuelson, L., Satoru, T. & Aoyagi, Y., 12 1 2002, : : MRS Internet Journal of Nitride Semiconductor Research. 7

研究成果: ジャーナルへの寄稿記事

Cathodoluminescence
Epitaxial films
Substrates
Atomic force microscopy
Scanning electron microscopy
9 引用 (Scopus)

Growth of AlN-SiC solid solutions by sequential supply epitaxy

Avramescu, A., Hirayama, H., Aoyagi, Y. & Satoru, T., 1 1 2002, : : Journal of Crystal Growth. 234, 2-3, p. 435-439 5 p.

研究成果: ジャーナルへの寄稿記事

Epitaxial growth
epitaxy
Solid solutions
solid solutions
Electron spectroscopy
1 引用 (Scopus)

Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

Brault, J., Tanaka, S., Sarigiannidou, E., Nakagawa, H., Rouvière, J. L., Feuillet, G. & Daudin, B., 12 1 2002, : : Physica Status Solidi (B) Basic Research. 234, 3, p. 939-942 4 p.

研究成果: ジャーナルへの寄稿記事

Spatial distribution
Semiconductor quantum dots
bunching
periodic variations
flat surfaces
131 引用 (Scopus)

Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy

Ashrafi, A. B. M. A., Suemune, I., Kumano, H. & Satoru, T., 11 15 2002, : : Japanese Journal of Applied Physics, Part 2: Letters. 41, 11 B

研究成果: ジャーナルへの寄稿記事

Molecular beam epitaxy
Excitons
molecular beam epitaxy
Vapors
vapors
2001
2 引用 (Scopus)

Near K-edge absorption spectra of III-V nitrides

Fukui, K., Hirai, R., Yamamoto, A., Hirayama, H., Aoyagi, Y., Yamaguchi, S., Amano, H., Akasaki, I. & Satoru, T., 11 1 2001, : : Physica Status Solidi (B) Basic Research. 228, 2, p. 461-465 5 p.

研究成果: ジャーナルへの寄稿記事

Nitrides
nitrides
Absorption spectra
Synchrotron radiation
Aluminum
49 引用 (Scopus)

Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces

Yamada, S., Kato, J. I., Satoru, T., Suemune, I., Avramescu, A., Aoyagi, Y., Teraguchi, N. & Suzuki, A., 6 4 2001, : : Applied Physics Letters. 78, 23, p. 3612-3614 3 p.

研究成果: ジャーナルへの寄稿記事

nucleation
kinetics
coalescing
defects
diffusion length

On phonon confinement effects and free carrier concentration in GaN quantum dots

Kuball, M., Gleize, J., Tanaka, S. & Aoyagi, Y., 11 1 2001, : : Physica Status Solidi (B) Basic Research. 228, 1, p. 195-198 4 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
Carrier concentration
quantum dots
Surface-Active Agents
Raman scattering
4 引用 (Scopus)

Quantum dot formation and crystal growth using an atomic nano-mask

Aoyagi, Y., Tanaka, S., Hirayama, H. & Takeuchi, M., 1 1 2001, : : Physica E: Low-Dimensional Systems and Nanostructures. 11, 2-3, p. 89-93 5 p.

研究成果: ジャーナルへの寄稿記事

Crystallization
Crystal growth
Semiconductor quantum dots
Masks
crystal growth
25 引用 (Scopus)

Resonant Raman scattering on self-assembled GaN quantum dots

Kuball, M., Gleize, J., Satoru, T. & Aoyagi, Y., 2 12 2001, : : Applied Physics Letters. 78, 7, p. 987-989 3 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
Raman spectra
barrier layers
phonons
excitation
2000
151 引用 (Scopus)

Anti-surfactant in III-nitride epitaxy - quantum dot formation and dislocation termination

Tanaka, S., Takeuchi, M. & Aoyagi, Y., 8 15 2000, : : Japanese Journal of Applied Physics, Part 2: Letters. 39, 8 B, p. L831-L834

研究成果: ジャーナルへの寄稿記事

Dislocations (crystals)
Epitaxial growth
Nitrides
epitaxy
Semiconductor quantum dots
99 引用 (Scopus)

Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching

Nakamura, S. I., Kimoto, T., Matsunami, H., Tanaka, S., Teraguchi, N. & Suzuki, A., 6 5 2000, : : Applied Physics Letters. 76, 23, p. 3412-3414 3 p.

研究成果: ジャーナルへの寄稿記事

etching
cells
bunching
inclination
atomic force microscopy
4 引用 (Scopus)

Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy

Shen, X. Q., Ramvall, P., Riblet, P., Aoyagi, Y., Hosi, K., Satoru, T. & Suemune, I., 1 1 2000, : : Journal of Crystal Growth. 209, 2-3, p. 396-400 5 p.

研究成果: ジャーナルへの寄稿Conference article

Gas source molecular beam epitaxy
Electric properties
molecular beam epitaxy
Optical properties
electrical properties
24 引用 (Scopus)

Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE

Tawara, T., Yoshida, H., Yogo, T., Satoru, T. & Suemune, I., 1 1 2000, : : Journal of Crystal Growth. 221, 1-4, p. 699-703 5 p.

研究成果: ジャーナルへの寄稿記事

Distributed Bragg reflectors
Metallorganic vapor phase epitaxy
Microcavities
Bragg reflectors
Vapor phase epitaxy
10 引用 (Scopus)

MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast

Tawara, T., Suemune, I. & Satoru, T., 1 1 2000, : : Journal of Crystal Growth. 214, p. 1019-1023 5 p.

研究成果: ジャーナルへの寄稿Conference article

Distributed Bragg reflectors
Metallorganic vapor phase epitaxy
Bragg reflectors
Refractive index
refractivity
81 引用 (Scopus)

Optical properties of GaN quantum dots

Ramvall, P., Riblet, P., Nomura, S., Aoyagi, Y. & Satoru, T., 4 15 2000, : : Journal of Applied Physics. 87, 8, p. 3883-3890 8 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
optical properties
photoluminescence
nonlinearity
vapor phase epitaxy

Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers

Tawara, T., Satoru, T., Kumano, H. & Suemune, I., 1 1 2000, : : Journal of Electronic Materials. 29, 5, p. 515-519 5 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
quantum dots
standard deviation
Growth temperature
Surface potential
1999
29 引用 (Scopus)

Cathodoluminescence spectroscopy and imaging of individual GaN dots

Petersson, A., Gustafsson, A., Samuelson, L., Satoru, T. & Aoyagi, Y., 6 7 1999, : : Applied Physics Letters. 74, 23, p. 3513-3515 3 p.

研究成果: ジャーナルへの寄稿記事

cathodoluminescence
luminescence
spectroscopy
scanning electron microscopy
positioning

Cathodoluminescence Studies of Spontaneously Formed Low-dimensional AlGaN Structures

Petersson, A., Gustafsson, A., Satoru, T., Aoyagi, Y. & Samuelson, L., 12 1 1999, : : Physica Scripta T. 79, p. 56-59 4 p.

研究成果: ジャーナルへの寄稿記事

AlGaN
cathodoluminescence
Luminescence
Scanning Electron Microscope
Photoluminescence
30 引用 (Scopus)

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., 9 27 1999, : : Applied Physics Letters. 75, 13, p. 1935-1937 3 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
excitons
cryogenic temperature
vapor phase epitaxy
phonons
30 引用 (Scopus)

Effect of indium doping on the transient optical properties of GaN films

Kumano, H., Hoshi, K. I., Tanaka, S., Suemune, I., Shen, X. Q., Riblet, P., Ramvall, P. & Aoyagi, Y., 11 8 1999, : : Applied Physics Letters. 75, 19, p. 2879-2881 3 p.

研究成果: ジャーナルへの寄稿記事

indium
optical properties
stimulated emission
spontaneous emission
excitation

Enhancement of surface decomposition using supersonic beam: Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 1 1 1999, : : Journal of Crystal Growth. 201, p. 402-406 5 p.

研究成果: ジャーナルへの寄稿Conference article

Gas source molecular beam epitaxy
Semiconductor quantum dots
molecular beam epitaxy
quantum dots
Decomposition

Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant

Hirayama, H., Aoyagi, Y. & Satoru, T., 12 1 1999, : : Materials Research Society Symposium - Proceedings. 537

研究成果: ジャーナルへの寄稿記事

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
2 引用 (Scopus)

Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant

Hirayama, H., Aoyagi, Y. & Satoru, T., 12 1 1999, : : MRS Internet Journal of Nitride Semiconductor Research. 4, SUPPL. 1

研究成果: ジャーナルへの寄稿記事

Surface-Active Agents
Semiconductor quantum dots
Surface active agents
Fabrication
Organic chemicals
6 引用 (Scopus)

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Hirayama, H., Satoru, T. & Aoyagi, Y., 1 1 1999, : : Microelectronic Engineering. 49, 3-4, p. 287-290 4 p.

研究成果: ジャーナルへの寄稿コメント/討論

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
3 引用 (Scopus)

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Hirayama, H., Satoru, T. & Aoyagi, Y., 1 1 1999, : : Microelectronic Engineering. 47, 1, p. 251-253 3 p.

研究成果: ジャーナルへの寄稿Conference article

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
15 引用 (Scopus)

GaN quantum structures with fractional dimension -from quantum well to quantum dot

Satoru, T., Suemune, I., Ramvall, P. & Aoyagi, Y., 1 1 1999, : : Physica Status Solidi (B) Basic Research. 216, 1, p. 431-434 4 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
masking
38 引用 (Scopus)

Growth and luminescence properties of self-organized ZnSe quantum dots

Tawara, T., Satoru, T., Kumano, H. & Suemune, I., 7 12 1999, : : Applied Physics Letters. 75, 2, p. 235-237 3 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
luminescence
zinc
atomic force microscopy
photoluminescence
3 引用 (Scopus)

High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3

Hwang, J. S., Satoru, T., Iwai, S., Aoyagi, Y. & Seong, S., 4 1 1999, : : Journal of Crystal Growth. 200, 1-2, p. 63-69 7 p.

研究成果: ジャーナルへの寄稿記事

Gallium
Film growth
Buffer layers
gallium
buffers
20 引用 (Scopus)

Optical characterization of the "E2" deep level in GaN

Hacke, P., Ramvall, P., Satoru, T., Aoyagi, Y., Kuramata, A., Horino, K. & Munekata, H., 1 25 1999, : : Applied Physics Letters. 74, 4, p. 543-545 3 p.

研究成果: ジャーナルへの寄稿記事

photoionization
capacitance
activation energy
formulations
thresholds
16 引用 (Scopus)

Semiconductor photonic dots: Visible wavelength-sized optical resonators

Suemune, I., Ueta, A., Avramescu, A., Satoru, T., Kumano, H. & Uesugi, K., 4 5 1999, : : Applied Physics Letters. 74, 14, p. 1963-1965 3 p.

研究成果: ジャーナルへの寄稿記事

optical resonators
photonics
optical reflection
optical resonance
wavelengths
12 引用 (Scopus)

Size-dependent optical nonlinearities in GaN quantum dots

Riblet, P., Satoru, T., Ramvall, P., Nomura, S. & Aoyagi, Y., 1 15 1999, : : Solid State Communications. 109, 6, p. 377-381 5 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
Energy gap
nonlinearity
quantum dots
Photoexcitation
1998
14 引用 (Scopus)

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Rowland, L. B., Satoru, T. & Davis, R. F., 1 1 1998, : : Journal of Materials Research. 13, 7, p. 1816-1822 7 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide
2 引用 (Scopus)

Application of ζ-factor method to Ti-Al-Cr system in analytical electron microscopy

Satoru, T., Watanabe, M., Horita, Z. & Nemoto, M., 1 1 1998, : : Journal of Electron Microscopy. 47, 1, p. 9-15 7 p.

研究成果: ジャーナルへの寄稿記事

Microanalysis
Electron microscopy
electron microscopy
Electron Microscopy
Chemical analysis