年単位の研究成果
研究成果 1993 2019
- 100 - 134 / 134 件中
- 出版年、タイトル （降順）
1998
Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence
Petersson, A., Tanaka, S., Aoyagi, Y. & Samuelson, L., 12 1 1998, ： : Materials Science Forum. 264-268, PART 2, p. 1335-1338 4 p.研究成果: ジャーナルへの寄稿 › 記事
Cathodoluminescence
cathodoluminescence
Semiconductor quantum dots
quantum dots
Luminescence
4
引用
(Scopus)
Chemical beam epitaxy of GaN using triethylgallium and ammonia
Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 6 1 1998, ： : Journal of Crystal Growth. 188, 1-4, p. 86-91 6 p.研究成果: ジャーナルへの寄稿 › 記事
Chemical beam epitaxy
Ammonia
epitaxy
ammonia
Surface morphology
2
引用
(Scopus)
Growth mechanisms of GaN quantum dots and their optical properties
Satoru, T., Ramvall, P., Nomura, S., Hirayama, H. & Aoyagi, Y., 1 1 1998, ： : Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi). 81, 6, p. 20-26 7 p.研究成果: ジャーナルへの寄稿 › 記事
Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Optical pumping
5
引用
(Scopus)
Influences of surface V/III ratio on the film quality during the GaN growth in gas-source molecular beam epitaxy
Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 6 1 1998, ： : Japanese Journal of Applied Physics, Part 2: Letters. 37, 6 A研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Nitrogen
nitrogen
131
引用
(Scopus)
Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces
Hirayama, H., Tanaka, S., Ramvall, P. & Aoyagi, Y., 12 1 1998, ： : Applied Physics Letters. 72, 14, p. 1736-1738 3 p.研究成果: ジャーナルへの寄稿 › 記事
assembling
quantum dots
photoluminescence
metalorganic chemical vapor deposition
indium
115
引用
(Scopus)
Observation of confinement-dependent exciton binding energy of GaN quantum dots
Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., 12 1 1998, ： : Applied Physics Letters. 73, 8, p. 1104-1106 3 p.研究成果: ジャーナルへの寄稿 › 記事
binding energy
quantum dots
excitons
electronic levels
shift
7
引用
(Scopus)
Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy
Kern, R. S., Satoru, T., Rowland, L. B. & Davis, R. F., 1 1 1998, ： : Journal of Crystal Growth. 183, 4, p. 581-593 13 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
Silicon carbide
Reaction kinetics
silicon carbides
reaction kinetics
1
引用
(Scopus)
Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy
Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 6 15 1998, ： : Journal of Crystal Growth. 189-190, p. 147-152 6 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Reflection high energy electron diffraction
Growth temperature
63
引用
(Scopus)
The formation of GaN dots on AlxGa1-xN surfaces using Si in gas-source molecular beam epitaxy
Shen, X. Q., Tanaka, S., Iwai, S. & Aoyagi, Y., 12 1 1998, ： : Applied Physics Letters. 72, 3, p. 344-346 3 p.研究成果: ジャーナルへの寄稿 › 記事
molecular beam epitaxy
gases
high energy electrons
electron diffraction
free energy
1997
Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE
Shen, X. Q., Tanaka, S., Iwai, S. & Aoyagi, Y., 12 1 1997, ： : Materials Research Society Symposium - Proceedings. 482, p. 223-226 4 p.研究成果: ジャーナルへの寄稿 › Conference article
Gas source molecular beam epitaxy
Reflection high energy electron diffraction
Surface reconstruction
high energy electrons
molecular beam epitaxy
4
引用
(Scopus)
GaN quantum dots in AlxGa1-xN confined layer structures
Satoru, T., Hirayama, H., Iwai, S. & Aoyagi, Y., 1 1 1997, ： : Materials Research Society Symposium - Proceedings. 449, p. 135-140 6 p.研究成果: ジャーナルへの寄稿 › Conference article
Semiconductor quantum dots
quantum dots
Surface-Active Agents
Silanes
Surface active agents
23
引用
(Scopus)
Gas-source molecular beam epitaxy of III-V nitrides
Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., Rowland, L. B., Satoru, T. & Kern, R. S., 1 1 1997, ： : Journal of Crystal Growth. 178, 1-2, p. 87-101 15 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
Ammonia
Nitrides
nitrides
molecular beam epitaxy
3
引用
(Scopus)
Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization
Kern, R. S., Järrendahl, K., Satoru, T. & Davis, R. F., 8 1 1997, ： : Diamond and Related Materials. 6, 10, p. 1282-1288 7 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Doping (additives)
Substrates
3
引用
(Scopus)
Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization
Davis, R. F., Weeks, T. W., Bremser, M. D., Satoru, T., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., 2 1 1997, ： : Solid-State Electronics. 41, 2 SPEC. ISS., p. 129-134 6 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Molecular beam epitaxy
vapor phase epitaxy
18
引用
(Scopus)
Homoepitaxial SiC growth by molecular beam epitaxy
Kern, R. S., Järrendahl, K., Satoru, T. & Davis, R. F., 1 1 1997, ： : Physica Status Solidi (B) Basic Research. 202, 1, p. 379-404 26 p.研究成果: ジャーナルへの寄稿 › 記事
Molecular beam epitaxy
molecular beam epitaxy
Epilayers
Substrates
Temperature
InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties
Hirayama, H., Satoru, T., Ramvall, P. & Aoyagi, Y., 12 1 1997, ： : Materials Research Society Symposium - Proceedings. 482, p. 737-742 6 p.研究成果: ジャーナルへの寄稿 › Conference article
Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Photoluminescence
1
引用
(Scopus)
New Buffering Process in Preparation of Hiah Quality GaN Films
Hwang, J. S., Seong, S., Satoru, T., Iwai, S., Aoyagi, Y. & Chong, P. J., 12 1 1997, ： : Bulletin of the Korean Chemical Society. 18, 11, p. 1133-1135 3 p.研究成果: ジャーナルへの寄稿 › 記事
34
引用
(Scopus)
Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC
Satoru, T., Iwai, S. & Aoyagi, Y., 1 1 1997, ： : Journal of Crystal Growth. 170, 1-4, p. 329-334 6 p.研究成果: ジャーナルへの寄稿 › 記事
Defect density
Buffer layers
buffers
defects
Metallorganic chemical vapor deposition
82
引用
(Scopus)
Simulated emission from optically pumped GaN quantum dots
Satoru, T., Hirayama, H., Aoyagi, Y., Narukawa, Y., Kawakami, Y., Fujita, S. & Fujita, S., 9 8 1997, ： : Applied Physics Letters. 71, 10, p. 1299-1301 3 p.研究成果: ジャーナルへの寄稿 › 記事
stimulated emission
quantum dots
spontaneous emission
metalorganic chemical vapor deposition
radiant flux density
1996
35
引用
(Scopus)
Defect formation during hetero-epitaxial growth of aluminum nitride thin films on 6H-silicon carbide by gas-source molecular beam epitaxy
Satoru, T., Kern, R. S., Bentley, J. & Davis, R. F., 3 1996, ： : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 35, 3, p. 1641-1647 7 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
Aluminum nitride
aluminum nitrides
Epitaxial growth
Silicon carbide
47
引用
(Scopus)
Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures
Aboelfotoh, M. O., Kern, R. S., Satoru, T., Davis, R. F. & Harris, C. I., 11 4 1996, ： : Applied Physics Letters. 69, 19, p. 2873-2875 3 p.研究成果: ジャーナルへの寄稿 › 記事
metals
wurtzite
molecular beam epitaxy
transmission electron microscopy
oxides
17
引用
(Scopus)
Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization
Davis, R. F., Satoru, T., Rowland, L. B., Kern, R. S., Sitar, Z., Ailey, S. K. & Wang, C., 1 1 1996, ： : Journal of Crystal Growth. 164, 1-4, p. 132-142 11 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
Aluminum nitride
Silicon carbide
Nitrides
silicon carbides
23
引用
(Scopus)
Issues and examples regarding growth of AlN, GaN and AlxGa1-xN thin films via OMVPE and gas source MBE
Davis, R. F., Weeks, T. W., Bremser, M. D., Satoru, T., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., 1996, ： : Unknown Journal. 395, p. 3-13 11 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Thin films
Molecular beam epitaxy
12
引用
(Scopus)
Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H) -SiC(0001) substrates
Davis, R. F., Satoru, T. & Kern, R. S., 1 1 1996, ： : Journal of Crystal Growth. 163, 1-2, p. 93-99 7 p.研究成果: ジャーナルへの寄稿 › 記事
Aluminum nitride
aluminum nitrides
Microstructural evolution
Silicon carbide
silicon carbides
277
引用
(Scopus)
Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant
Satoru, T., Iwai, S. & Aoyagi, Y., 12 23 1996, ： : Applied Physics Letters. 69, 26, p. 4096-4098 3 p.研究成果: ジャーナルへの寄稿 › 記事
assembling
surfactants
quantum dots
silanes
wetting
20
引用
(Scopus)
Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy
Satoru, T., Kern, R. S., Davis, R. F., Wendelken, J. F. & Xu, J., 4 20 1996, ： : Surface Science. 350, 1-3, p. 247-253 7 p.研究成果: ジャーナルへの寄稿 › 記事
Scanning tunneling microscopy
scanning tunneling microscopy
Thin films
thin films
Gas source molecular beam epitaxy
1995
111
引用
(Scopus)
Initial stage of aluminum nitride film growth on 6H-silicon carbide< by plasma-assisted, gas-source molecular beam epitaxy
Satoru, T., Kern, R. S. & Davis, R. F., 12 1 1995, ： : Applied Physics Letters. 1 p.研究成果: ジャーナルへの寄稿 › 記事
aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
positioning
1994
69
引用
(Scopus)
Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy
Tanaka, S., Kern, R. S. & Davis, R. F., 12 1 1994, ： : Applied Physics Letters. 65, 22, p. 2851-2853 3 p.研究成果: ジャーナルへの寄稿 › 記事
silicon carbides
gas flow
molecular beam epitaxy
thin films
gases
2
引用
(Scopus)
Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy
Davis, R. F., Ailey, K. S., Kern, R. S., Kester, D. J., Sitar, Z., Smith, L., Satoru, T. & Wang, C., 12 1 1994, ： : Materials Research Society Symposium - Proceedings. 339, p. 351-362 12 p.研究成果: ジャーナルへの寄稿 › Conference article
Molecular beam epitaxy
Silicon carbide
Nitrides
silicon carbides
carbides
1993
31
引用
(Scopus)
Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy
Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., 12 1 1993, ： : Applied Physics Letters. 62, 25, p. 3333-3335 3 p.研究成果: ジャーナルへの寄稿 › 記事
aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
stacking fault energy
44
引用
(Scopus)
Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy
Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., 10 1993, ： : Journal of Materials Research. 8, 9, p. 2310-2314 5 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
Plasma Gases
Epitaxial growth
molecular beam epitaxy
Plasmas
26
引用
(Scopus)
Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC
Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., 1 1 1993, ： : Journal of Materials Research. 8, 11, p. 2753-2756 4 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
Epitaxial films
Growth temperature
High resolution transmission electron microscopy
Ethylene
22
引用
(Scopus)
Layer-by-layer growth of SiC at low temperatures
Sumakeris, J. J., Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., 3 25 1993, ： : Thin Solid Films. 225, 1-2, p. 219-224 6 p.研究成果: ジャーナルへの寄稿 › 記事
Ellipsometry
ellipsometry
filaments
Transmission electron microscopy
transmission electron microscopy
22
引用
(Scopus)
Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy
Kern, R. S., Satoru, T. & Davis, R. F., 1 1 1993, ： : Journal of Materials Research. 8, 7, p. 1477-1480 4 p.研究成果: ジャーナルへの寄稿 › 記事
Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide