Pureに変更を加えた場合、すぐここに表示されます。

研究成果 1993 2019

1998

Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence

Petersson, A., Tanaka, S., Aoyagi, Y. & Samuelson, L., 12 1 1998, : : Materials Science Forum. 264-268, PART 2, p. 1335-1338 4 p.

研究成果: ジャーナルへの寄稿記事

Cathodoluminescence
cathodoluminescence
Semiconductor quantum dots
quantum dots
Luminescence
4 引用 (Scopus)

Chemical beam epitaxy of GaN using triethylgallium and ammonia

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 6 1 1998, : : Journal of Crystal Growth. 188, 1-4, p. 86-91 6 p.

研究成果: ジャーナルへの寄稿記事

Chemical beam epitaxy
Ammonia
epitaxy
ammonia
Surface morphology
2 引用 (Scopus)

Growth mechanisms of GaN quantum dots and their optical properties

Satoru, T., Ramvall, P., Nomura, S., Hirayama, H. & Aoyagi, Y., 1 1 1998, : : Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi). 81, 6, p. 20-26 7 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Optical pumping
5 引用 (Scopus)
Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Nitrogen
nitrogen
131 引用 (Scopus)

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hirayama, H., Tanaka, S., Ramvall, P. & Aoyagi, Y., 12 1 1998, : : Applied Physics Letters. 72, 14, p. 1736-1738 3 p.

研究成果: ジャーナルへの寄稿記事

assembling
quantum dots
photoluminescence
metalorganic chemical vapor deposition
indium
115 引用 (Scopus)

Observation of confinement-dependent exciton binding energy of GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., 12 1 1998, : : Applied Physics Letters. 73, 8, p. 1104-1106 3 p.

研究成果: ジャーナルへの寄稿記事

binding energy
quantum dots
excitons
electronic levels
shift
7 引用 (Scopus)

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

Kern, R. S., Satoru, T., Rowland, L. B. & Davis, R. F., 1 1 1998, : : Journal of Crystal Growth. 183, 4, p. 581-593 13 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Silicon carbide
Reaction kinetics
silicon carbides
reaction kinetics
1 引用 (Scopus)

Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 6 15 1998, : : Journal of Crystal Growth. 189-190, p. 147-152 6 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Reflection high energy electron diffraction
Growth temperature
63 引用 (Scopus)

The formation of GaN dots on AlxGa1-xN surfaces using Si in gas-source molecular beam epitaxy

Shen, X. Q., Tanaka, S., Iwai, S. & Aoyagi, Y., 12 1 1998, : : Applied Physics Letters. 72, 3, p. 344-346 3 p.

研究成果: ジャーナルへの寄稿記事

molecular beam epitaxy
gases
high energy electrons
electron diffraction
free energy
1997

Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE

Shen, X. Q., Tanaka, S., Iwai, S. & Aoyagi, Y., 12 1 1997, : : Materials Research Society Symposium - Proceedings. 482, p. 223-226 4 p.

研究成果: ジャーナルへの寄稿Conference article

Gas source molecular beam epitaxy
Reflection high energy electron diffraction
Surface reconstruction
high energy electrons
molecular beam epitaxy
4 引用 (Scopus)

GaN quantum dots in AlxGa1-xN confined layer structures

Satoru, T., Hirayama, H., Iwai, S. & Aoyagi, Y., 1 1 1997, : : Materials Research Society Symposium - Proceedings. 449, p. 135-140 6 p.

研究成果: ジャーナルへの寄稿Conference article

Semiconductor quantum dots
quantum dots
Surface-Active Agents
Silanes
Surface active agents
23 引用 (Scopus)

Gas-source molecular beam epitaxy of III-V nitrides

Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., Rowland, L. B., Satoru, T. & Kern, R. S., 1 1 1997, : : Journal of Crystal Growth. 178, 1-2, p. 87-101 15 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Ammonia
Nitrides
nitrides
molecular beam epitaxy
3 引用 (Scopus)

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Kern, R. S., Järrendahl, K., Satoru, T. & Davis, R. F., 8 1 1997, : : Diamond and Related Materials. 6, 10, p. 1282-1288 7 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Doping (additives)
Substrates
3 引用 (Scopus)

Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Satoru, T., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., 2 1 1997, : : Solid-State Electronics. 41, 2 SPEC. ISS., p. 129-134 6 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Molecular beam epitaxy
vapor phase epitaxy
18 引用 (Scopus)

Homoepitaxial SiC growth by molecular beam epitaxy

Kern, R. S., Järrendahl, K., Satoru, T. & Davis, R. F., 1 1 1997, : : Physica Status Solidi (B) Basic Research. 202, 1, p. 379-404 26 p.

研究成果: ジャーナルへの寄稿記事

Molecular beam epitaxy
molecular beam epitaxy
Epilayers
Substrates
Temperature

InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties

Hirayama, H., Satoru, T., Ramvall, P. & Aoyagi, Y., 12 1 1997, : : Materials Research Society Symposium - Proceedings. 482, p. 737-742 6 p.

研究成果: ジャーナルへの寄稿Conference article

Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Photoluminescence
1 引用 (Scopus)

New Buffering Process in Preparation of Hiah Quality GaN Films

Hwang, J. S., Seong, S., Satoru, T., Iwai, S., Aoyagi, Y. & Chong, P. J., 12 1 1997, : : Bulletin of the Korean Chemical Society. 18, 11, p. 1133-1135 3 p.

研究成果: ジャーナルへの寄稿記事

34 引用 (Scopus)

Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC

Satoru, T., Iwai, S. & Aoyagi, Y., 1 1 1997, : : Journal of Crystal Growth. 170, 1-4, p. 329-334 6 p.

研究成果: ジャーナルへの寄稿記事

Defect density
Buffer layers
buffers
defects
Metallorganic chemical vapor deposition
82 引用 (Scopus)

Simulated emission from optically pumped GaN quantum dots

Satoru, T., Hirayama, H., Aoyagi, Y., Narukawa, Y., Kawakami, Y., Fujita, S. & Fujita, S., 9 8 1997, : : Applied Physics Letters. 71, 10, p. 1299-1301 3 p.

研究成果: ジャーナルへの寄稿記事

stimulated emission
quantum dots
spontaneous emission
metalorganic chemical vapor deposition
radiant flux density
1996
35 引用 (Scopus)
Gas source molecular beam epitaxy
Aluminum nitride
aluminum nitrides
Epitaxial growth
Silicon carbide
47 引用 (Scopus)

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

Aboelfotoh, M. O., Kern, R. S., Satoru, T., Davis, R. F. & Harris, C. I., 11 4 1996, : : Applied Physics Letters. 69, 19, p. 2873-2875 3 p.

研究成果: ジャーナルへの寄稿記事

metals
wurtzite
molecular beam epitaxy
transmission electron microscopy
oxides
17 引用 (Scopus)

Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization

Davis, R. F., Satoru, T., Rowland, L. B., Kern, R. S., Sitar, Z., Ailey, S. K. & Wang, C., 1 1 1996, : : Journal of Crystal Growth. 164, 1-4, p. 132-142 11 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Aluminum nitride
Silicon carbide
Nitrides
silicon carbides
23 引用 (Scopus)

Issues and examples regarding growth of AlN, GaN and AlxGa1-xN thin films via OMVPE and gas source MBE

Davis, R. F., Weeks, T. W., Bremser, M. D., Satoru, T., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., 1996, : : Unknown Journal. 395, p. 3-13 11 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Thin films
Molecular beam epitaxy
12 引用 (Scopus)
Aluminum nitride
aluminum nitrides
Microstructural evolution
Silicon carbide
silicon carbides
277 引用 (Scopus)

Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant

Satoru, T., Iwai, S. & Aoyagi, Y., 12 23 1996, : : Applied Physics Letters. 69, 26, p. 4096-4098 3 p.

研究成果: ジャーナルへの寄稿記事

assembling
surfactants
quantum dots
silanes
wetting
20 引用 (Scopus)

Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy

Satoru, T., Kern, R. S., Davis, R. F., Wendelken, J. F. & Xu, J., 4 20 1996, : : Surface Science. 350, 1-3, p. 247-253 7 p.

研究成果: ジャーナルへの寄稿記事

Scanning tunneling microscopy
scanning tunneling microscopy
Thin films
thin films
Gas source molecular beam epitaxy
1995
111 引用 (Scopus)

Initial stage of aluminum nitride film growth on 6H-silicon carbide< by plasma-assisted, gas-source molecular beam epitaxy

Satoru, T., Kern, R. S. & Davis, R. F., 12 1 1995, : : Applied Physics Letters. 1 p.

研究成果: ジャーナルへの寄稿記事

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
positioning
1994
69 引用 (Scopus)

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

Tanaka, S., Kern, R. S. & Davis, R. F., 12 1 1994, : : Applied Physics Letters. 65, 22, p. 2851-2853 3 p.

研究成果: ジャーナルへの寄稿記事

silicon carbides
gas flow
molecular beam epitaxy
thin films
gases
2 引用 (Scopus)

Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy

Davis, R. F., Ailey, K. S., Kern, R. S., Kester, D. J., Sitar, Z., Smith, L., Satoru, T. & Wang, C., 12 1 1994, : : Materials Research Society Symposium - Proceedings. 339, p. 351-362 12 p.

研究成果: ジャーナルへの寄稿Conference article

Molecular beam epitaxy
Silicon carbide
Nitrides
silicon carbides
carbides
1993
31 引用 (Scopus)

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., 12 1 1993, : : Applied Physics Letters. 62, 25, p. 3333-3335 3 p.

研究成果: ジャーナルへの寄稿記事

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
stacking fault energy
44 引用 (Scopus)

Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., 10 1993, : : Journal of Materials Research. 8, 9, p. 2310-2314 5 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Plasma Gases
Epitaxial growth
molecular beam epitaxy
Plasmas
26 引用 (Scopus)

Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC

Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., 1 1 1993, : : Journal of Materials Research. 8, 11, p. 2753-2756 4 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Epitaxial films
Growth temperature
High resolution transmission electron microscopy
Ethylene
22 引用 (Scopus)

Layer-by-layer growth of SiC at low temperatures

Sumakeris, J. J., Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., 3 25 1993, : : Thin Solid Films. 225, 1-2, p. 219-224 6 p.

研究成果: ジャーナルへの寄稿記事

Ellipsometry
ellipsometry
filaments
Transmission electron microscopy
transmission electron microscopy
22 引用 (Scopus)

Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Satoru, T. & Davis, R. F., 1 1 1993, : : Journal of Materials Research. 8, 7, p. 1477-1480 4 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide