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研究成果 1993 2019

フィルター
記事
2003
22 引用 (Scopus)

Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

Brault, J., Satoru, T., Sarigiannidou, E., Rouvière, J. L., Daudin, B., Feuillet, G. & Nakagawa, H., 3 1 2003, : : Journal of Applied Physics. 93, 5, p. 3108-3110 3 p.

研究成果: ジャーナルへの寄稿記事

alignment
quantum dots
spatial distribution
molecular beam epitaxy
atomic force microscopy
13 引用 (Scopus)
Vapor phase epitaxy
Sapphire
sapphire
wafers
vapor phases
76 引用 (Scopus)

Self-ordering of nanofacets on vicinal sic surfaces

Nakagawa, H., Satoru, T. & Suemune, I., 1 1 2003, : : Physical Review Letters. 91, 22

研究成果: ジャーナルへの寄稿記事

etching
control surfaces
flat surfaces
free energy
atomic force microscopy
9 引用 (Scopus)

Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

Kato, J. I., Satoru, T., Yamada, S. & Suemune, I., 8 25 2003, : : Applied Physics Letters. 83, 8, p. 1569-1571 3 p.

研究成果: ジャーナルへの寄稿記事

gallium nitrides
silicon carbides
molecular beam epitaxy
anisotropy
coalescing
2002
7 引用 (Scopus)

Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence

Petersson, A., Gustafsson, A., Samuelson, L., Satoru, T. & Aoyagi, Y., 12 1 2002, : : MRS Internet Journal of Nitride Semiconductor Research. 7

研究成果: ジャーナルへの寄稿記事

Cathodoluminescence
Epitaxial films
Substrates
Atomic force microscopy
Scanning electron microscopy
9 引用 (Scopus)

Growth of AlN-SiC solid solutions by sequential supply epitaxy

Avramescu, A., Hirayama, H., Aoyagi, Y. & Satoru, T., 1 1 2002, : : Journal of Crystal Growth. 234, 2-3, p. 435-439 5 p.

研究成果: ジャーナルへの寄稿記事

Epitaxial growth
epitaxy
Solid solutions
solid solutions
Electron spectroscopy
1 引用 (Scopus)

Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

Brault, J., Satoru, T., Sarigiannidou, E., Nakagawa, H., Rouvière, J. L., Feuillet, G. & Daudin, B., 12 1 2002, : : Physica Status Solidi (B) Basic Research. 234, 3, p. 939-942 4 p.

研究成果: ジャーナルへの寄稿記事

Spatial distribution
Semiconductor quantum dots
bunching
periodic variations
flat surfaces
130 引用 (Scopus)

Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy

Ashrafi, A. B. M. A., Suemune, I., Kumano, H. & Satoru, T., 11 15 2002, : : Japanese Journal of Applied Physics, Part 2: Letters. 41, 11 B

研究成果: ジャーナルへの寄稿記事

Molecular beam epitaxy
Excitons
molecular beam epitaxy
Vapors
vapors
2001
2 引用 (Scopus)

Near K-edge absorption spectra of III-V nitrides

Fukui, K., Hirai, R., Yamamoto, A., Hirayama, H., Aoyagi, Y., Yamaguchi, S., Amano, H., Akasaki, I. & Satoru, T., 11 1 2001, : : Physica Status Solidi (B) Basic Research. 228, 2, p. 461-465 5 p.

研究成果: ジャーナルへの寄稿記事

Nitrides
nitrides
Absorption spectra
Synchrotron radiation
Aluminum
48 引用 (Scopus)

Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces

Yamada, S., Kato, J. I., Satoru, T., Suemune, I., Avramescu, A., Aoyagi, Y., Teraguchi, N. & Suzuki, A., 6 4 2001, : : Applied Physics Letters. 78, 23, p. 3612-3614 3 p.

研究成果: ジャーナルへの寄稿記事

nucleation
kinetics
coalescing
defects
diffusion length

On phonon confinement effects and free carrier concentration in GaN quantum dots

Kuball, M., Gleize, J., Satoru, T. & Aoyagi, Y., 11 1 2001, : : Physica Status Solidi (B) Basic Research. 228, 1, p. 195-198 4 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
Carrier concentration
quantum dots
Surface-Active Agents
Raman scattering
4 引用 (Scopus)

Quantum dot formation and crystal growth using an atomic nano-mask

Aoyagi, Y., Satoru, T., Hirayama, H. & Takeuchi, M., 1 1 2001, : : Physica E: Low-Dimensional Systems and Nanostructures. 11, 2-3, p. 89-93 5 p.

研究成果: ジャーナルへの寄稿記事

Crystallization
Crystal growth
Semiconductor quantum dots
Masks
crystal growth
25 引用 (Scopus)

Resonant Raman scattering on self-assembled GaN quantum dots

Kuball, M., Gleize, J., Satoru, T. & Aoyagi, Y., 2 12 2001, : : Applied Physics Letters. 78, 7, p. 987-989 3 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
Raman spectra
barrier layers
phonons
excitation
2000
150 引用 (Scopus)

Anti-surfactant in III-nitride epitaxy - quantum dot formation and dislocation termination

Satoru, T., Takeuchi, M. & Aoyagi, Y., 8 15 2000, : : Japanese Journal of Applied Physics, Part 2: Letters. 39, 8 B

研究成果: ジャーナルへの寄稿記事

Dislocations (crystals)
Epitaxial growth
Nitrides
epitaxy
Semiconductor quantum dots
98 引用 (Scopus)

Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching

Nakamura, S. I., Kimoto, T., Matsunami, H., Satoru, T., Teraguchi, N. & Suzuki, A., 6 5 2000, : : Applied Physics Letters. 76, 23, p. 3412-3414 3 p.

研究成果: ジャーナルへの寄稿記事

etching
cells
bunching
inclination
atomic force microscopy
24 引用 (Scopus)

Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE

Tawara, T., Yoshida, H., Yogo, T., Satoru, T. & Suemune, I., 1 1 2000, : : Journal of Crystal Growth. 221, 1-4, p. 699-703 5 p.

研究成果: ジャーナルへの寄稿記事

Distributed Bragg reflectors
Metallorganic vapor phase epitaxy
Microcavities
Bragg reflectors
Vapor phase epitaxy
81 引用 (Scopus)

Optical properties of GaN quantum dots

Ramvall, P., Riblet, P., Nomura, S., Aoyagi, Y. & Satoru, T., 4 15 2000, : : Journal of Applied Physics. 87, 8, p. 3883-3890 8 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
optical properties
photoluminescence
nonlinearity
vapor phase epitaxy

Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers

Tawara, T., Satoru, T., Kumano, H. & Suemune, I., 1 1 2000, : : Journal of Electronic Materials. 29, 5, p. 515-519 5 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
quantum dots
standard deviation
Growth temperature
Surface potential
1999
27 引用 (Scopus)

Cathodoluminescence spectroscopy and imaging of individual GaN dots

Petersson, A., Gustafsson, A., Samuelson, L., Satoru, T. & Aoyagi, Y., 6 7 1999, : : Applied Physics Letters. 74, 23, p. 3513-3515 3 p.

研究成果: ジャーナルへの寄稿記事

cathodoluminescence
luminescence
spectroscopy
scanning electron microscopy
positioning

Cathodoluminescence Studies of Spontaneously Formed Low-dimensional AlGaN Structures

Petersson, A., Gustafsson, A., Satoru, T., Aoyagi, Y. & Samuelson, L., 12 1 1999, : : Physica Scripta T. 79, p. 56-59 4 p.

研究成果: ジャーナルへの寄稿記事

AlGaN
cathodoluminescence
Luminescence
Scanning Electron Microscope
Photoluminescence
30 引用 (Scopus)

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., 9 27 1999, : : Applied Physics Letters. 75, 13, p. 1935-1937 3 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
excitons
cryogenic temperature
vapor phase epitaxy
phonons
28 引用 (Scopus)

Effect of indium doping on the transient optical properties of GaN films

Kumano, H., Hoshi, K. I., Satoru, T., Suemune, I., Shen, X. Q., Riblet, P., Ramvall, P. & Aoyagi, Y., 11 8 1999, : : Applied Physics Letters. 75, 19, p. 2879-2881 3 p.

研究成果: ジャーナルへの寄稿記事

indium
optical properties
stimulated emission
spontaneous emission
excitation

Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant

Hirayama, H., Aoyagi, Y. & Satoru, T., 12 1 1999, : : Materials Research Society Symposium - Proceedings. 537

研究成果: ジャーナルへの寄稿記事

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
2 引用 (Scopus)

Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant

Hirayama, H., Aoyagi, Y. & Satoru, T., 12 1 1999, : : MRS Internet Journal of Nitride Semiconductor Research. 4, SUPPL. 1

研究成果: ジャーナルへの寄稿記事

Surface-Active Agents
Semiconductor quantum dots
Surface active agents
Fabrication
Organic chemicals
15 引用 (Scopus)

GaN quantum structures with fractional dimension -from quantum well to quantum dot

Satoru, T., Suemune, I., Ramvall, P. & Aoyagi, Y., 1 1 1999, : : Physica Status Solidi (B) Basic Research. 216, 1, p. 431-434 4 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
masking
38 引用 (Scopus)

Growth and luminescence properties of self-organized ZnSe quantum dots

Tawara, T., Satoru, T., Kumano, H. & Suemune, I., 7 12 1999, : : Applied Physics Letters. 75, 2, p. 235-237 3 p.

研究成果: ジャーナルへの寄稿記事

quantum dots
luminescence
zinc
atomic force microscopy
photoluminescence
3 引用 (Scopus)

High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3

Hwang, J. S., Satoru, T., Iwai, S., Aoyagi, Y. & Seong, S., 4 1 1999, : : Journal of Crystal Growth. 200, 1-2, p. 63-69 7 p.

研究成果: ジャーナルへの寄稿記事

Gallium
Film growth
Buffer layers
gallium
buffers
20 引用 (Scopus)

Optical characterization of the "E2" deep level in GaN

Hacke, P., Ramvall, P., Satoru, T., Aoyagi, Y., Kuramata, A., Horino, K. & Munekata, H., 1 25 1999, : : Applied Physics Letters. 74, 4, p. 543-545 3 p.

研究成果: ジャーナルへの寄稿記事

photoionization
capacitance
activation energy
formulations
thresholds
16 引用 (Scopus)

Semiconductor photonic dots: Visible wavelength-sized optical resonators

Suemune, I., Ueta, A., Avramescu, A., Satoru, T., Kumano, H. & Uesugi, K., 4 5 1999, : : Applied Physics Letters. 74, 14, p. 1963-1965 3 p.

研究成果: ジャーナルへの寄稿記事

optical resonators
photonics
optical reflection
optical resonance
wavelengths
12 引用 (Scopus)

Size-dependent optical nonlinearities in GaN quantum dots

Riblet, P., Satoru, T., Ramvall, P., Nomura, S. & Aoyagi, Y., 1 15 1999, : : Solid State Communications. 109, 6, p. 377-381 5 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
Energy gap
nonlinearity
quantum dots
Photoexcitation
1998
14 引用 (Scopus)

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Rowland, L. B., Satoru, T. & Davis, R. F., 1 1 1998, : : Journal of Materials Research. 13, 7, p. 1816-1822 7 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide
2 引用 (Scopus)

Application of ζ-factor method to Ti-Al-Cr system in analytical electron microscopy

Satoru, T., Watanabe, M., Horita, Z. & Nemoto, M., 1 1 1998, : : Journal of Electron Microscopy. 47, 1, p. 9-15 7 p.

研究成果: ジャーナルへの寄稿記事

Microanalysis
Electron microscopy
electron microscopy
Electron Microscopy
Chemical analysis

Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence

Petersson, A., Satoru, T., Aoyagi, Y. & Samuelson, L., 12 1 1998, : : Materials Science Forum. 264-268, PART 2, p. 1335-1338 4 p.

研究成果: ジャーナルへの寄稿記事

Cathodoluminescence
cathodoluminescence
Semiconductor quantum dots
quantum dots
Luminescence
4 引用 (Scopus)

Chemical beam epitaxy of GaN using triethylgallium and ammonia

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 6 1 1998, : : Journal of Crystal Growth. 188, 1-4, p. 86-91 6 p.

研究成果: ジャーナルへの寄稿記事

Chemical beam epitaxy
Ammonia
epitaxy
ammonia
Surface morphology
2 引用 (Scopus)

Growth mechanisms of GaN quantum dots and their optical properties

Satoru, T., Ramvall, P., Nomura, S., Hirayama, H. & Aoyagi, Y., 1 1 1998, : : Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi). 81, 6, p. 20-26 7 p.

研究成果: ジャーナルへの寄稿記事

Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Optical pumping
5 引用 (Scopus)
Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Nitrogen
nitrogen
131 引用 (Scopus)

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hirayama, H., Satoru, T., Ramvall, P. & Aoyagi, Y., 12 1 1998, : : Applied Physics Letters. 72, 14, p. 1736-1738 3 p.

研究成果: ジャーナルへの寄稿記事

assembling
quantum dots
photoluminescence
metalorganic chemical vapor deposition
indium
115 引用 (Scopus)

Observation of confinement-dependent exciton binding energy of GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., 12 1 1998, : : Applied Physics Letters. 73, 8, p. 1104-1106 3 p.

研究成果: ジャーナルへの寄稿記事

binding energy
quantum dots
excitons
electronic levels
shift
7 引用 (Scopus)

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

Kern, R. S., Satoru, T., Rowland, L. B. & Davis, R. F., 1 1 1998, : : Journal of Crystal Growth. 183, 4, p. 581-593 13 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Silicon carbide
Reaction kinetics
silicon carbides
reaction kinetics
1 引用 (Scopus)

Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 6 15 1998, : : Journal of Crystal Growth. 189-190, p. 147-152 6 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Reflection high energy electron diffraction
Growth temperature
62 引用 (Scopus)

The formation of GaN dots on AlxGa1-xN surfaces using Si in gas-source molecular beam epitaxy

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., 12 1 1998, : : Applied Physics Letters. 72, 3, p. 344-346 3 p.

研究成果: ジャーナルへの寄稿記事

molecular beam epitaxy
gases
high energy electrons
electron diffraction
free energy
1997
23 引用 (Scopus)

Gas-source molecular beam epitaxy of III-V nitrides

Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., Rowland, L. B., Satoru, T. & Kern, R. S., 1 1 1997, : : Journal of Crystal Growth. 178, 1-2, p. 87-101 15 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Ammonia
Nitrides
nitrides
molecular beam epitaxy
3 引用 (Scopus)

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Kern, R. S., Järrendahl, K., Satoru, T. & Davis, R. F., 8 1 1997, : : Diamond and Related Materials. 6, 10, p. 1282-1288 7 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Doping (additives)
Substrates
3 引用 (Scopus)

Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Satoru, T., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., 2 1 1997, : : Solid-State Electronics. 41, 2 SPEC. ISS., p. 129-134 6 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Molecular beam epitaxy
vapor phase epitaxy
18 引用 (Scopus)

Homoepitaxial SiC growth by molecular beam epitaxy

Kern, R. S., Järrendahl, K., Satoru, T. & Davis, R. F., 1 1 1997, : : Physica Status Solidi (B) Basic Research. 202, 1, p. 379-404 26 p.

研究成果: ジャーナルへの寄稿記事

Molecular beam epitaxy
molecular beam epitaxy
Epilayers
Substrates
Temperature
1 引用 (Scopus)

New Buffering Process in Preparation of Hiah Quality GaN Films

Hwang, J. S., Seong, S., Satoru, T., Iwai, S., Aoyagi, Y. & Chong, P. J., 12 1 1997, : : Bulletin of the Korean Chemical Society. 18, 11, p. 1133-1135 3 p.

研究成果: ジャーナルへの寄稿記事

34 引用 (Scopus)

Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC

Satoru, T., Iwai, S. & Aoyagi, Y., 1 1 1997, : : Journal of Crystal Growth. 170, 1-4, p. 329-334 6 p.

研究成果: ジャーナルへの寄稿記事

Defect density
Buffer layers
buffers
defects
Metallorganic chemical vapor deposition
82 引用 (Scopus)

Simulated emission from optically pumped GaN quantum dots

Satoru, T., Hirayama, H., Aoyagi, Y., Narukawa, Y., Kawakami, Y., Fujita, S. & Fujita, S., 9 8 1997, : : Applied Physics Letters. 71, 10, p. 1299-1301 3 p.

研究成果: ジャーナルへの寄稿記事

stimulated emission
quantum dots
spontaneous emission
metalorganic chemical vapor deposition
radiant flux density
1996
35 引用 (Scopus)
Gas source molecular beam epitaxy
Aluminum nitride
aluminum nitrides
Epitaxial growth
Silicon carbide
47 引用 (Scopus)

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

Aboelfotoh, M. O., Kern, R. S., Satoru, T., Davis, R. F. & Harris, C. I., 11 4 1996, : : Applied Physics Letters. 69, 19, p. 2873-2875 3 p.

研究成果: ジャーナルへの寄稿記事

metals
wurtzite
molecular beam epitaxy
transmission electron microscopy
oxides