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研究成果 1993 2019

フィルター
記事
1996
47 引用 (Scopus)

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

Aboelfotoh, M. O., Kern, R. S., Satoru, T., Davis, R. F. & Harris, C. I., 11 4 1996, : : Applied Physics Letters. 69, 19, p. 2873-2875 3 p.

研究成果: ジャーナルへの寄稿記事

metals
wurtzite
molecular beam epitaxy
transmission electron microscopy
oxides
17 引用 (Scopus)

Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization

Davis, R. F., Satoru, T., Rowland, L. B., Kern, R. S., Sitar, Z., Ailey, S. K. & Wang, C., 1 1 1996, : : Journal of Crystal Growth. 164, 1-4, p. 132-142 11 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Aluminum nitride
Silicon carbide
Nitrides
silicon carbides
23 引用 (Scopus)

Issues and examples regarding growth of AlN, GaN and AlxGa1-xN thin films via OMVPE and gas source MBE

Davis, R. F., Weeks, T. W., Bremser, M. D., Satoru, T., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., 1996, : : Unknown Journal. 395, p. 3-13 11 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Thin films
Molecular beam epitaxy
12 引用 (Scopus)
Aluminum nitride
aluminum nitrides
Microstructural evolution
Silicon carbide
silicon carbides
277 引用 (Scopus)

Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant

Satoru, T., Iwai, S. & Aoyagi, Y., 12 23 1996, : : Applied Physics Letters. 69, 26, p. 4096-4098 3 p.

研究成果: ジャーナルへの寄稿記事

assembling
surfactants
quantum dots
silanes
wetting
20 引用 (Scopus)

Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy

Satoru, T., Kern, R. S., Davis, R. F., Wendelken, J. F. & Xu, J., 4 20 1996, : : Surface Science. 350, 1-3, p. 247-253 7 p.

研究成果: ジャーナルへの寄稿記事

Scanning tunneling microscopy
scanning tunneling microscopy
Thin films
thin films
Gas source molecular beam epitaxy
1995
111 引用 (Scopus)

Initial stage of aluminum nitride film growth on 6H-silicon carbide< by plasma-assisted, gas-source molecular beam epitaxy

Satoru, T., Kern, R. S. & Davis, R. F., 12 1 1995, : : Applied Physics Letters. 1 p.

研究成果: ジャーナルへの寄稿記事

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
positioning
1994
69 引用 (Scopus)

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

Tanaka, S., Kern, R. S. & Davis, R. F., 12 1 1994, : : Applied Physics Letters. 65, 22, p. 2851-2853 3 p.

研究成果: ジャーナルへの寄稿記事

silicon carbides
gas flow
molecular beam epitaxy
thin films
gases
1993
31 引用 (Scopus)

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., 12 1 1993, : : Applied Physics Letters. 62, 25, p. 3333-3335 3 p.

研究成果: ジャーナルへの寄稿記事

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
stacking fault energy
44 引用 (Scopus)

Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., 10 1993, : : Journal of Materials Research. 8, 9, p. 2310-2314 5 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Plasma Gases
Epitaxial growth
molecular beam epitaxy
Plasmas
26 引用 (Scopus)

Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC

Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., 1 1 1993, : : Journal of Materials Research. 8, 11, p. 2753-2756 4 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Epitaxial films
Growth temperature
High resolution transmission electron microscopy
Ethylene
22 引用 (Scopus)

Layer-by-layer growth of SiC at low temperatures

Sumakeris, J. J., Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., 3 25 1993, : : Thin Solid Films. 225, 1-2, p. 219-224 6 p.

研究成果: ジャーナルへの寄稿記事

Ellipsometry
ellipsometry
filaments
Transmission electron microscopy
transmission electron microscopy
22 引用 (Scopus)

Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Satoru, T. & Davis, R. F., 1 1 1993, : : Journal of Materials Research. 8, 7, p. 1477-1480 4 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide