Pureに変更を加えた場合、すぐここに表示されます。

研究成果 1993 2019

フィルター
記事
1996
276 引用 (Scopus)

Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant

Satoru, T., Iwai, S. & Aoyagi, Y., 12 23 1996, : : Applied Physics Letters. 69, 26, p. 4096-4098 3 p.

研究成果: ジャーナルへの寄稿記事

assembling
surfactants
quantum dots
silanes
wetting
20 引用 (Scopus)

Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy

Satoru, T., Kern, R. S., Davis, R. F., Wendelken, J. F. & Xu, J., 4 20 1996, : : Surface Science. 350, 1-3, p. 247-253 7 p.

研究成果: ジャーナルへの寄稿記事

Scanning tunneling microscopy
scanning tunneling microscopy
Thin films
thin films
Gas source molecular beam epitaxy
1995
110 引用 (Scopus)

Initial stage of aluminum nitride film growth on 6H-silicon carbide< by plasma-assisted, gas-source molecular beam epitaxy

Satoru, T., Kern, R. S. & Davis, R. F., 12 1 1995, : : Applied Physics Letters. 1 p.

研究成果: ジャーナルへの寄稿記事

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
positioning
1994
69 引用 (Scopus)

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

Satoru, T., Kern, R. S. & Davis, R. F., 12 1 1994, : : Applied Physics Letters. 65, 22, p. 2851-2853 3 p.

研究成果: ジャーナルへの寄稿記事

silicon carbides
gas flow
molecular beam epitaxy
thin films
gases
2 引用 (Scopus)

Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy

Davis, R. F., Ailey, K. S., Kern, R. S., Kester, D. J., Sitar, Z., Smith, L., Satoru, T. & Wang, C., 1994, : : Materials Research Society Symposium - Proceedings. 339, p. 351-362 12 p.

研究成果: ジャーナルへの寄稿記事

Molecular beam epitaxy
Silicon carbide
Nitrides
silicon carbides
carbides
1993
31 引用 (Scopus)

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., 1993, : : Applied Physics Letters. 62, 25, p. 3333-3335 3 p.

研究成果: ジャーナルへの寄稿記事

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
stacking fault energy
44 引用 (Scopus)

Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., 1 1 1993, : : Journal of Materials Research. 8, 9, p. 2310-2314 5 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Plasma Gases
Epitaxial growth
molecular beam epitaxy
Plasmas
26 引用 (Scopus)

Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC

Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., 1 1 1993, : : Journal of Materials Research. 8, 11, p. 2753-2756 4 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Epitaxial films
Growth temperature
High resolution transmission electron microscopy
Ethylene
21 引用 (Scopus)

Layer-by-layer growth of SiC at low temperatures

Sumakeris, J. J., Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., 3 25 1993, : : Thin Solid Films. 225, 1-2, p. 219-224 6 p.

研究成果: ジャーナルへの寄稿記事

Ellipsometry
ellipsometry
filaments
Transmission electron microscopy
transmission electron microscopy
22 引用 (Scopus)

Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Satoru, T. & Davis, R. F., 1 1 1993, : : Journal of Materials Research. 8, 7, p. 1477-1480 4 p.

研究成果: ジャーナルへの寄稿記事

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide