β-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence

Kensuke Akiyama, Masaru Itakura, Satoru Kaneko, Hiroshi Funakubo, Yoshihito Maeda

研究成果: Contribution to journalArticle査読

13 被引用数 (Scopus)

抄録

We have investigated the growth of β-FeSi2 on Cu-mediated (100) Si substrates and photoluminescence (PL) behavior. X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the mediated surface became amorphous-like Si layers due to Cu atomic diffusion from the surface to the inside of Si and recrystallized during β-FeSi2 deposition, and that the recrystallization may contribute to the improvement of crystallinity of β-FeSi2 and the hetero-interface. We have observed pronounced enhancement of PL intensity from β-FeSi2 grown on the Cu-mediated Si substrate. This implies that non-radiative recombination centers may be decreased by the improvement of hetero-interface.

本文言語英語
ページ(範囲)8144-8148
ページ数5
ジャーナルThin Solid Films
515
22
DOI
出版ステータス出版済み - 8 15 2007

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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