Melting growth of Si-doped Ge films, i.e., Ge(Si) films, on insulator has been investigated. After rapid-thermal annealing of Ge(Si) films in the temperatures region surrounded with the liquidus curve and solidus curve of the phase diagram of the SiGe system, SiGe crystals with large-grains (15-30μm) were formed. The Si concentration profiles in the grains showed peaks at the center of grains. The peak Si concentrations were almost the same as the Si concentrations along the solidus curve at the annealing temperature. These phenomena were explained based on the formation of Si-rich micro-crystals during annealing and subsequent Si-segregated lateral-growth during cooling.
|寄稿の翻訳タイトル||Seed-Less Melting Growth of Ge(Si) on Insulator: Large Grain Formation by Si Segregation|
|ジャーナル||電子情報通信学会技術研究報告. OME, 有機エレクトロニクス|
|出版ステータス||出版済み - 4月 20 2012|