[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1)

X. Z. Liao, J. Zou, D. J.H. Cockayne, S. Matsumura

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700°C were investigated using transmission electron microscopy working at 300kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodicity with the change of the TEM sample substrate thickness and the period is equal to the effective extinction distance of the transmitted beam. Simulated images based on finite element models of the displacement field and using multi-beam dynamical diffraction theory show a high degree of agreement. Studies for a range of electron energies show the power of the technique for investigating composition segregation in quantum dot islands.

本文言語英語
ページ(範囲)239-247
ページ数9
ジャーナルUltramicroscopy
98
2-4
DOI
出版ステータス出版済み - 1 2004

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 器械工学

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