抄録
We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques, we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers.
| 本文言語 | 英語 |
|---|---|
| ページ（範囲） | 2076-2082 |
| ページ数 | 7 |
| ジャーナル | IEEE Transactions on Microwave Theory and Techniques |
| 巻 | 44 |
| 号 | 11 |
| DOI | |
| 出版ステータス | 出版済み - 12 1 1996 |
| 外部発表 | はい |
All Science Journal Classification (ASJC) codes
- 放射線
- 凝縮系物理学
- 電子工学および電気工学