0-40 GHz GaAs MESFET distributed baseband amplifier IC's for high-speed optical transmission

Shunji Kimura, Yuhki Imai

研究成果: Contribution to journalArticle査読

32 被引用数 (Scopus)

抄録

We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques, we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers.

本文言語英語
ページ(範囲)2076-2082
ページ数7
ジャーナルIEEE Transactions on Microwave Theory and Techniques
44
11
DOI
出版ステータス出版済み - 12 1 1996
外部発表はい

All Science Journal Classification (ASJC) codes

  • 放射線
  • 凝縮系物理学
  • 電子工学および電気工学

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