The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ∼1.3dB and a bandwidth of ∼40GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs.
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