抄録
The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ∼1.3dB and a bandwidth of ∼40GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs.
| 本文言語 | 英語 |
|---|---|
| ページ（範囲） | 1713-1715 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 32 |
| 号 | 18 |
| DOI | |
| 出版ステータス | 出版済み - 1月 1 1996 |
| 外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 電子工学および電気工学