TY - GEN
T1 - 1-5GHz wideband low noise amplifier using active inductor
AU - Galal, A. I.A.
AU - Pokharel, R. K.
AU - Kanaya, H.
AU - Yoshida, K.
PY - 2010/12/17
Y1 - 2010/12/17
N2 - An ultra-wideband low noise amplifier employs shunt resistive feedback is presented. LNA chip area has been reduced significantly using active inductor load. The LNA is designed and fabricated in the standard 0.18μm CMOS technology. The UWB LNA exhibit a measured gain of 12.5 to 13dB, and a noise figure of 3.8 dB over 1-5 GHz frequencies. S11 is less than -8dB within the entire band of frequencies while the IIP3 is -1 dBm at 3 GHz. Compared with their traditional counterparts, the proposed LNA consumes less chip area 0.16 mm2 and presents better gain and noise figure performance.
AB - An ultra-wideband low noise amplifier employs shunt resistive feedback is presented. LNA chip area has been reduced significantly using active inductor load. The LNA is designed and fabricated in the standard 0.18μm CMOS technology. The UWB LNA exhibit a measured gain of 12.5 to 13dB, and a noise figure of 3.8 dB over 1-5 GHz frequencies. S11 is less than -8dB within the entire band of frequencies while the IIP3 is -1 dBm at 3 GHz. Compared with their traditional counterparts, the proposed LNA consumes less chip area 0.16 mm2 and presents better gain and noise figure performance.
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U2 - 10.1109/ICUWB.2010.5614455
DO - 10.1109/ICUWB.2010.5614455
M3 - Conference contribution
AN - SCOPUS:78650071522
SN - 9781424453061
T3 - 2010 IEEE International Conference on Ultra-Wideband, ICUWB2010 - Proceedings
SP - 193
EP - 196
BT - 2010 IEEE International Conference on Ultra-Wideband, ICUWB2010 - Proceedings
T2 - 2010 IEEE International Conference on Ultra-Wideband, ICUWB2010
Y2 - 20 September 2010 through 23 September 2010
ER -