1-5GHz wideband low noise amplifier using active inductor

A. I.A. Galal, R. K. Pokharel, H. Kanaya, K. Yoshida

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

9 被引用数 (Scopus)

抄録

An ultra-wideband low noise amplifier employs shunt resistive feedback is presented. LNA chip area has been reduced significantly using active inductor load. The LNA is designed and fabricated in the standard 0.18μm CMOS technology. The UWB LNA exhibit a measured gain of 12.5 to 13dB, and a noise figure of 3.8 dB over 1-5 GHz frequencies. S11 is less than -8dB within the entire band of frequencies while the IIP3 is -1 dBm at 3 GHz. Compared with their traditional counterparts, the proposed LNA consumes less chip area 0.16 mm2 and presents better gain and noise figure performance.

本文言語英語
ホスト出版物のタイトル2010 IEEE International Conference on Ultra-Wideband, ICUWB2010 - Proceedings
ページ193-196
ページ数4
DOI
出版ステータス出版済み - 12 17 2010
イベント2010 IEEE International Conference on Ultra-Wideband, ICUWB2010 - Nanjing, 中国
継続期間: 9 20 20109 23 2010

出版物シリーズ

名前2010 IEEE International Conference on Ultra-Wideband, ICUWB2010 - Proceedings
1

その他

その他2010 IEEE International Conference on Ultra-Wideband, ICUWB2010
Country中国
CityNanjing
Period9/20/109/23/10

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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