TY - GEN
T1 - 10 cm diameter mono cast Si growth and its characterization
AU - Miyamura, Y.
AU - Harada, H.
AU - Jiptner, K.
AU - Chen, J.
AU - Prakash, R. R.
AU - Li, J. Y.
AU - Sekiguchi, T.
AU - Kojima, T.
AU - Ohshita, Y.
AU - Ogura, A.
AU - Fukuzawa, M.
AU - Nakano, S.
AU - Gao, B.
AU - Kakimoto, Koichi
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency.
AB - To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency.
UR - http://www.scopus.com/inward/record.url?scp=84886792777&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84886792777&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.205-206.89
DO - 10.4028/www.scientific.net/SSP.205-206.89
M3 - Conference contribution
AN - SCOPUS:84886792777
SN - 9783037858240
T3 - Solid State Phenomena
SP - 89
EP - 93
BT - Gettering and Defect Engineering in Semiconductor Technology XV
PB - Trans Tech Publications Ltd
T2 - 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
Y2 - 22 September 2013 through 27 September 2013
ER -