10 cm diameter mono cast Si growth and its characterization

Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, J. Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, K. Kakimoto

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

3 被引用数 (Scopus)

抄録

To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency.

本文言語英語
ホスト出版物のタイトルGettering and Defect Engineering in Semiconductor Technology XV
出版社Trans Tech Publications Ltd
ページ89-93
ページ数5
ISBN(印刷版)9783037858240
DOI
出版ステータス出版済み - 2014
イベント15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, 英国
継続期間: 9 22 20139 27 2013

出版物シリーズ

名前Solid State Phenomena
205-206
ISSN(印刷版)1012-0394

その他

その他15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
Country英国
CityOxford
Period9/22/139/27/13

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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