1.0 THz detection by InAs quantum-well MOSHEMT using GSG THz probe

Eiji Kume, Hiroyuki Ishii, Hiroyuki Hattori, Wen Hsin Chang, Yuichi Mukai, Mutsuo Ogura, Haruichi Kanaya, Tanemasa Asano, Tatsuro Maeda

研究成果: 著書/レポートタイプへの貢献会議での発言

7 引用 (Scopus)

抜粋

Terahertz wave of 1.0 THz using ground-signal-ground (GSG) THz probe was detected by InAs quantum-well (QW) MOSHEMT. The clear response curves were obtained by the detector of which DC source (ground) terminal unconnected to the ground line of GSG THz probe. The responsivity of 10,755 kV/W with lock-in amplifier gain was achieved and noise equivalent power (NEP) of 156 pW/Hz0.5 was estimated.

元の言語英語
ホスト出版物のタイトル2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ページ289-291
ページ数3
ISBN(印刷物)9781538637111
DOI
出版物ステータス出版済み - 7 26 2018
イベント2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, 日本
継続期間: 3 13 20183 16 2018

出版物シリーズ

名前2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

その他

その他2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
日本
Kobe
期間3/13/183/16/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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  • これを引用

    Kume, E., Ishii, H., Hattori, H., Chang, W. H., Mukai, Y., Ogura, M., Kanaya, H., Asano, T., & Maeda, T. (2018). 1.0 THz detection by InAs quantum-well MOSHEMT using GSG THz probe. : 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 289-291). [8421467] (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421467