(100) orientation-controlled Ge giant-stripes on insulating substrates by rapid-melting growth combined with Si micro-seed technique

Kaoru Toko, Masashi Kurosawa, Hiroyuki Yokoyama, Naoyuki Kawabata, Takashi Sakane, Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

研究成果: ジャーナルへの寄稿記事

19 引用 (Scopus)

抜粋

Orientation-controlled single-crystal Ge stripes on insulating substrates are desired to achieve high-performance thin-film transistors. The rapidmelting growth process of amorphous Ge has been examined by using polycrystalline Si islands as the growth seed. Rotational growth is found for Ge stripes initiated from (110) and (111) orientations, however, the lateral-growth initiated from the (100) orientation propagates continuously keeping its orientation. Based on these findings, an advanced rapid-melting growth method is developed by combining with the Si(100) micro-seed technique. This enables single-crystal Ge(100) giant-stripes with 400 μm length on insulating substrates. High hole mobility exceeding 1000 cm2 V-1 s-1 is also demonstrated.

元の言語英語
記事番号075603
ジャーナルApplied Physics Express
3
発行部数7
DOI
出版物ステータス出版済み - 7 2010

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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